Digital Library
Close Browse articles from a journal
 
Search for with title:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
                                       All articles of the corresponding issues
 
                             49 results found
no title author magazine year volume issue page(s) type
1 Analysis of co-tunneling effect in single-electronics simulation Elabd, Ali A.
 2016
 15 4 p. 1351-1360
 article
2 A new DVCC-based fully cascadable voltage-mode full-wave rectifier Ibrahim, Muhammed A.
 2016
 15 4 p. 1440-1449
 article
3 Asymmetric junctionless nanowire TFET with built-in $${n}^{+}$$n+ source pocket emphasizing on energy band modification Rahimian, Morteza
 2016
 15 4 p. 1297-1307
 article
4 Atomistic tight-binding computations in the new class of CdSe/AlP II–VI core/III–V shell nanocrystals Sukkabot, Worasak
 2016
 15 4 p. 1248-1254
 article
5 A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG) FinFET Narendar, Vadthiya
 2016
 15 4 p. 1316-1325
 article
6 Basis adaptation for the stochastic nonlinear Poisson–Boltzmann equation Khodadadian, Amirreza
 2016
 15 4 p. 1393-1406
 article
7 Behavior of the dielectric function of monolayer $$\hbox {MoS}_{2}$$MoS2 under Uniaxial Strain Nayeri, Maryam
 2016
 15 4 p. 1388-1392
 article
8 Design and analysis of new fault-tolerant majority gate for quantum-dot cellular automata Du, Huakun
 2016
 15 4 p. 1484-1497
 article
9 Design and modeling of molecular logic circuits based on transistor structures Safapour, S.
 2016
 15 4 p. 1416-1423
 article
10 Design and simulation of a semispherical semiconductor to construct a beta-voltaic battery using c-Si and a-Si:H materials with different doping concentration Sadeghi, H.
 2016
 15 4 p. 1577-1592
 article
11 Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells Guevara, Marco
 2016
 15 4 p. 1498-1504
 article
12 Design of all-optical universal shift register using nonlinear microring resonators Rakshit, Jayanta Kumar
 2016
 15 4 p. 1450-1461
 article
13 Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer Du, Jiangfeng
 2016
 15 4 p. 1334-1339
 article
14 Efficient numerical procedure for the determination of the wave function-independent terms in longitudinal optical phonon scattering rates formulated in the Fourier domain Lü, X.
 2016
 15 4 p. 1505-1510
 article
15 Electronic properties of graphyne nanotubes filled with small fullerenes: a density functional theory study Majidi, Roya
 2016
 15 4 p. 1263-1268
 article
16 Electron–phonon dissipation in quantum nanodevices Iotti, Rita Claudia
 2016
 15 4 p. 1170-1178
 article
17 Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs Panda, Subhrasmita
 2016
 15 4 p. 1326-1333
 article
18 Fabrication parameters affecting implementation of waveguide bandpass filter with complementary split-ring resonators Stefanovski Pajović, Snežana Lj.
 2016
 15 4 p. 1462-1472
 article
19 First-principle calculations of electronic and ferromagnetic properties of $$\hbox {Al}_{1-x}\hbox {V}_{x}\hbox {Sb}$$Al1-xVxSb Zerouali, Asmaa
 2016
 15 4 p. 1255-1262
 article
20 Fully self-consistent analysis of III-nitride quantum cascade structures Saha, Sumit
 2016
 15 4 p. 1531-1540
 article
21 High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics Hlali, Slah
 2016
 15 4 p. 1340-1350
 article
22 H$${^{+}}$$+-ion-sensitive FET macromodel in LTSPICE IV Abu Samah, Nur Liyana Mardhiah
 2016
 15 4 p. 1407-1415
 article
23 Impact of contact resistance on memory window in phase-change random access memory (PCRAM) An, Jun-seop
 2016
 15 4 p. 1570-1576
 article
24 Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors Pala, Marco G.
 2016
 15 4 p. 1240-1247
 article
25 Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective Martinez, Antonio
 2016
 15 4 p. 1130-1147
 article
26 Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs Djamil, Rechem
 2016
 15 4 p. 1308-1315
 article
27 Incoherent transport in NEMO5: realistic and efficient scattering on phonons Charles, James
 2016
 15 4 p. 1123-1129
 article
28 Introduction Bescond, Marc
 2016
 15 4 p. 1119-1122
 article
29 Negative differential resistance effect in similar right triangle graphene devices Wang, Lihua
 2016
 15 4 p. 1284-1290
 article
30 Negative differential resistance in new structures based on graphene nanoribbons Sharifi, M.
 2016
 15 4 p. 1361-1369
 article
31 20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications Ajayan, J.
 2016
 15 4 p. 1291-1296
 article
32 Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic $$\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}$$AlxGa1-xN/GaN resonant tunneling MODFETs Bouguenna, D.
 2016
 15 4 p. 1269-1274
 article
33 Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures Ganji, Jabbar
 2016
 15 4 p. 1541-1553
 article
34 On the local approximation of the electron–photon interaction self-energy Cavassilas, Nicolas
 2016
 15 4 p. 1233-1239
 article
35 Partially coherent electron transport in terahertz quantum cascade lasers based on a Markovian master equation for the density matrix Jonasson, O.
 2016
 15 4 p. 1192-1205
 article
36 Quantum dynamics of optical phonons generated by optical excitation of a quantum dot Wigger, Daniel
 2016
 15 4 p. 1158-1169
 article
37 Random phonon model of dissipative electron transport in nanowire MOSFETs Mil’nikov, Gennady
 2016
 15 4 p. 1179-1191
 article
38 Reconfiguration of optical logics gates at 160 Gb/s based on SOA-MZI Lovkesh,
 2016
 15 4 p. 1473-1483
 article
39 Self-consistent device simulation of a-Si p–i–n solar cells and energy resolution analyses of capture and emission processes Suzuki, Azuma
 2016
 15 4 p. 1554-1562
 article
40 Self-consistent quantum drift-diffusion model for multiple quantum well IMPATT diodes Ghosh, Monisha
 2016
 15 4 p. 1370-1387
 article
41 Simulation of dielectric behavior in RFeO$$_{3}$$3 orthoferrite ceramics (R = rare earth metals) Ghayour, Hamid
 2016
 15 4 p. 1275-1283
 article
42 Structural dependence of the transferred charge density in triboelectric nanogenerators: analytical and numerical study Kim, SeongMin
 2016
 15 4 p. 1593-1597
 article
43 Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model Prajoon, P.
 2016
 15 4 p. 1511-1520
 article
44 The nonequilibrium Green’s function picture of inelastic processes in nanostructure photovoltaics Aeberhard, Urs
 2016
 15 4 p. 1219-1232
 article
45 Theoretical investigation of the electronic structure and optical properties of zinc-doped magnesium oxide Wang, Jia
 2016
 15 4 p. 1521-1530
 article
46 Towards realistic time-resolved simulations of quantum devices Weston, Joseph
 2016
 15 4 p. 1148-1157
 article
47 Underlap channel silicon-on-insulator quantum dot floating-gate MOSFET for low-power memory applications Dabhi, Chetan T.
 2016
 15 4 p. 1563-1569
 article
48 Unphysical features in the application of the Boltzmann collision operator in the time-dependent modeling of quantum transport Zhan, Z.
 2016
 15 4 p. 1206-1218
 article
49 Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations Abbas, Zia
 2016
 15 4 p. 1424-1439
 article
                             49 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands