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                             27 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A novel 4H–SiC power MOSFET with source-side poly-Si/SiC heterojunctions for single-event effects hardening Yu, Qisheng

198 C p.
artikel
2 Borophene vertical dopingless Tunnel FET with high- κ dielectric and incorporating gate–drain underlapping technique Choudhary, Vibhash

198 C p.
artikel
3 Comparison of magneto-optical transport properties due to piezoelectric phonon scattering in rectangular, parabolic, and semiparabolic GaAs-based quantum wells Thuy, Huynh Thi Phuong

198 C p.
artikel
4 Computational modeling of a Sb2S3 /CdxSb2-x(S1-ySey)3 monolithic tandem photocell structure Kond Ngue, Pierre Gérard Darel

198 C p.
artikel
5 Corrigendum to “Graphene-based MEMS devices for gas sensing applications: A review” [Micro Nanostruct. 195 (2024) 207954] Owais, Tirad

198 C p.
artikel
6 Corrigendum to ‘Innovative spacer material integration in tree-FETs for enhanced performance across variable channel lengths’ [Micro Nanostruct. 195 207974 (2024)] Parvathi, Dharavath

198 C p.
artikel
7 Dual doped ring reconfigurable FET and its process variation analysis using random forest algorithm Chatterjee, Indira

198 C p.
artikel
8 Editorial Board
198 C p.
artikel
9 Effects of magnetic field and structural parameters on multi-photon absorption spectra in Morse quantum wells with electron–phonon interactions Vi, Tran Ky

198 C p.
artikel
10 Enhanced optical performance of a dual-drain vertical TFET photosensor for near-infrared light detection Shaik, Chinna Baji

198 C p.
artikel
11 Enhanced performance of AlGaN solar-blind ultraviolet avalanche photodiodes through electric field optimization Ma, Jianhua

198 C p.
artikel
12 Fabrication and simulation of optical shaping diffuser to control light patterns Chiu, Po-Wei

198 C p.
artikel
13 Gate misalignment effect on electrical characteristics and comparison of Analog/RF performance parameters of triple metal dual gate vertical TFET Kumbhar, Rohit R.

198 C p.
artikel
14 High performance of AlGaN/GaN HEMT with AlN cap layer Luo, Xin

198 C p.
artikel
15 High-sensitivity detection in biosensors: A comparative study of inverted T- and L-channel charge plasma TFETs Gorla, Siva Rama Krishna

198 C p.
artikel
16 4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode Zhang, Yue

198 C p.
artikel
17 Impact of hindrance and trap impurities on the sensitivity measurement of N-Pocket TFET based biosensor Tiwari, Shreyas

198 C p.
artikel
18 Influence of annealing on the thermal quenching of photoluminescence in GaAsBi/GaAs quantum dots with bimodal inhomogeneous broadening Zouaghi, S.

198 C p.
artikel
19 Investigating the optical properties of cylindrical core/shell/shell quantum dots (CCSSQDs) with and without hydrogenic impurity: Role of spatial factors, magnetic field, dielectric matrices and Rashba parameter Naifar, A.

198 C p.
artikel
20 Investigation of interface, border and bulk traps of Al2O3/β-Ga2O3 MOS capacitors via O2 plasma treatment Du, Song

198 C p.
artikel
21 Investigation on electrical parameters in nanowire FET and nanosheet FET including trap charges and its circuit applications Gogoi, Manosh Protim

198 C p.
artikel
22 Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors Zhang, Shuang

198 C p.
artikel
23 Multi-channel wide-angle nonreciprocal thermal radiator with planar heterostructure Wang, Zuohong

198 C p.
artikel
24 Multiple-parameter optimization of AlGaN nanoarrays based on optical absorption accelerated by machine learning Wu, Xian

198 C p.
artikel
25 Performance investigation of neoteric Pt/Pd Junctionless gas tube FET(JL-GT-FET) as a Hydrogen(H2) gas sensor for industrial applications-analytical model Goel, Anubha

198 C p.
artikel
26 Pharmaceutical emerging pollutants photodegradation by the action of g-C3N4/BiVO4 heterojunctions Luevano-Hipolito, E.

198 C p.
artikel
27 The annealing treatment of interface states in planar and recessed-anode AlGaN/GaN Schottky barrier diodes Ren, Yan

198 C p.
artikel
                             27 gevonden resultaten
 
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