| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Advantages of the extended finite element method for the analysis of crack propagation in power modules
|
Nwanoro, Kenneth Chimezie
|
|
|
4 |
C |
p.
|
article
|
| 2 |
A review of PETT oscillation's characteristics, mechanism, and suppression methods in the IGBT device
|
Feng, Ganyu
|
|
|
4 |
C |
p.
|
article
|
| 3 |
Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor
|
Kang, Hyemin
|
|
|
4 |
C |
p.
|
article
|
| 4 |
ICeGaNTM technology: The easy-to-use and self-protected GaN power IC
|
Longobardi, Giorgia
|
|
|
4 |
C |
p.
|
article
|
| 5 |
Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT
|
Fernandes Paes Pinto Rocha, P.
|
|
|
4 |
C |
p.
|
article
|
| 6 |
Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions
|
Zhang, Ziyang
|
|
|
4 |
C |
p.
|
article
|
| 7 |
Layer-by-layer printable nano-scale polypropylene for precise control of nanocomposite capacitor dielectric morphologies in metallised film capacitors
|
Greenbank, William
|
|
|
4 |
C |
p.
|
article
|
| 8 |
Lifetime modeling of solder joints based on accelerated mechanical testing and Finite Element Analysis
|
Lederer, M.
|
|
|
4 |
C |
p.
|
article
|
| 9 |
PECVD SiN x passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management
|
Moser, Matthias
|
|
|
4 |
C |
p.
|
article
|
| 10 |
Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance
|
Zhang, L.
|
|
|
4 |
C |
p.
|
article
|
| 11 |
Thick gate oxide extrinsic breakdown – The potential role of neutral hydrogen atom
|
Cheung, Kin P
|
|
|
4 |
C |
p.
|
article
|
Journal description