nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Electronic structure mechanism for the wettability of Sn-based solder alloys
|
Feng, Wufeng |
|
|
31 |
3 |
p. 185-190 |
artikel |
2 |
Electronic structure mechanism for the wettability of Sn-based solder alloys
|
Feng, Wufeng |
|
2002 |
31 |
3 |
p. 185-190 |
artikel |
3 |
Laser doping of silicon carbide substrates
|
Salama, I. A. |
|
|
31 |
3 |
p. 200-208 |
artikel |
4 |
Laser doping of silicon carbide substrates
|
Salama, I. A. |
|
2002 |
31 |
3 |
p. 200-208 |
artikel |
5 |
Microwave annealing for ultra-shallow junction formation
|
Kohli, P. |
|
|
31 |
3 |
p. 214-219 |
artikel |
6 |
Microwave annealing for ultra-shallow junction formation
|
Kohli, P. |
|
2002 |
31 |
3 |
p. 214-219 |
artikel |
7 |
Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors
|
De Lyon, T. J. |
|
|
31 |
3 |
p. 220-226 |
artikel |
8 |
Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors
|
Lyon, T. J. De |
|
2002 |
31 |
3 |
p. 220-226 |
artikel |
9 |
Multilayer resonators and a bandpass filter fabricated from a novel low-temperature co-fired ceramic
|
Jantunen, H. |
|
|
31 |
3 |
p. 191-195 |
artikel |
10 |
Multilayer resonators and a bandpass filter fabricated from a novel low-temperature co-fired ceramic
|
Jantunen, H. |
|
2002 |
31 |
3 |
p. 191-195 |
artikel |
11 |
Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma
|
Kong, S. -M. |
|
|
31 |
3 |
p. 209-213 |
artikel |
12 |
Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma
|
Kong, S. -M. |
|
2002 |
31 |
3 |
p. 209-213 |
artikel |
13 |
Soldering reactions between In49Sn and Ag thick films
|
Cheng, M. D. |
|
|
31 |
3 |
p. 171-177 |
artikel |
14 |
Soldering reactions between In49Sn and Ag thick films
|
Cheng, M. D. |
|
2002 |
31 |
3 |
p. 171-177 |
artikel |
15 |
Studies on nucleation kinetics of InxGa1−xN/GaN heterostructures
|
Varadarajan, E. |
|
|
31 |
3 |
p. 227-233 |
artikel |
16 |
Studies on nucleation kinetics of InxGa1−xN/GaN heterostructures
|
Varadarajan, E. |
|
2002 |
31 |
3 |
p. 227-233 |
artikel |
17 |
The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge
|
Tyagi, R. |
|
|
31 |
3 |
p. 234-237 |
artikel |
18 |
The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge
|
Tyagi, R. |
|
2002 |
31 |
3 |
p. 234-237 |
artikel |
19 |
The influence of fiber orientation on electromagnetic shielding in liquid-crystal polymers
|
Jou, W. S. |
|
|
31 |
3 |
p. 178-184 |
artikel |
20 |
The influence of fiber orientation on electromagnetic shielding in liquid-crystal polymers
|
Jou, W. S. |
|
2002 |
31 |
3 |
p. 178-184 |
artikel |
21 |
Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
|
Kim, Y. M. |
|
|
31 |
3 |
p. 196-199 |
artikel |
22 |
Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
|
Kim, Y. M. |
|
2002 |
31 |
3 |
p. 196-199 |
artikel |