| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AgIn2/Ag2In transformations in an In-49Sn/Ag soldered joint under thermal aging
|
Chuang, T. H.
|
|
|
30 |
8 |
p. 945-950
|
artikel
|
| 2 |
Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system
|
Wang, Shui Jinn
|
|
|
30 |
8 |
p. 917-924
|
artikel
|
| 3 |
Correlation between excess Si atoms near the ultrathin silicon oxide-Si(100) interface and oxidation temperature
|
Yamada, Hiroshi
|
|
|
30 |
8 |
p. 1021-1027
|
artikel
|
| 4 |
Correlation between intermetallic thickness and roughness during solder reflow
|
Zuruzi, A. S.
|
|
|
30 |
8 |
p. 997-1000
|
artikel
|
| 5 |
Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe
|
Söderström, D.
|
|
|
30 |
8 |
p. 972-976
|
artikel
|
| 6 |
Dye-sensitized solid-state photovoltaic cells: Suppression of electron-hole recombination by deposition of the dye on a thin insulating film in contact with a semiconductor
|
Tennakone, K.
|
|
|
30 |
8 |
p. 992-996
|
artikel
|
| 7 |
Effect of thermal oxide on the crystallization of the anodic Ta2O5 film
|
Pozdeev-Freeman, Yuri
|
|
|
30 |
8 |
p. 931-936
|
artikel
|
| 8 |
Effects of metallization characteristics on gold wire bondability of organic printed circuit boards
|
Kim, Jang-Kyo
|
|
|
30 |
8 |
p. 1001-1011
|
artikel
|
| 9 |
Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP:Fe and GaAs:Fe
|
Angulo Barrios, C.
|
|
|
30 |
8 |
p. 987-991
|
artikel
|
| 10 |
Ethylene glycol ether free solder paste development
|
Lytle, Bill
|
|
|
30 |
8 |
p. 1035-1041
|
artikel
|
| 11 |
Fluxless wetting propeities of one-side-coated under bump metallurgy and top surface metallurgy
|
Hong, Soon-Min
|
|
|
30 |
8 |
p. 937-944
|
artikel
|
| 12 |
Indium doping effect on GaN in the initial growth stage
|
Yuan, Hairong
|
|
|
30 |
8 |
p. 977-979
|
artikel
|
| 13 |
Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source
|
Shashkin, V.
|
|
|
30 |
8 |
p. 980-986
|
artikel
|
| 14 |
Microstructure control of copper films by the addition of molybdenum in an advanced metallization process
|
Lee, W. H.
|
|
|
30 |
8 |
p. 1042-1048
|
artikel
|
| 15 |
Oxygen and indium diffusion into SiO2 encapsulated polycrystalline CdSe films
|
Langford, R. M.
|
|
|
30 |
8 |
p. 925-930
|
artikel
|
| 16 |
Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing
|
Niraula, M.
|
|
|
30 |
8 |
p. 911-916
|
artikel
|
| 17 |
Study of optical and electrical properties of AlxGa1−xSb grown by metalorganic chemical vapor deposition
|
Ramelan, A. H.
|
|
|
30 |
8 |
p. 965-971
|
artikel
|
| 18 |
The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor
|
Lee, W. H.
|
|
|
30 |
8 |
p. 1028-1034
|
artikel
|
| 19 |
Thermal and mechanical separations of silicon layers from hydrogen pattern-implanted wafers
|
Yun, C. H.
|
|
|
30 |
8 |
p. 960-964
|
artikel
|
| 20 |
Water bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers
|
Horng, R. H.
|
|
|
30 |
8 |
p. 907-910
|
artikel
|
| 21 |
Weldability of thin sheet metals by small-scale resistance spot welding using high-frequency inverter and capacitor-discharge power supplies
|
Zhou, Y.
|
|
|
30 |
8 |
p. 1012-1020
|
artikel
|
| 22 |
Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)
|
Vanhollebeke, K.
|
|
|
30 |
8 |
p. 951-959
|
artikel
|
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