| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Bromine ion-beam-assisted etching of III–V semiconductors
|
Goodhue, W. D.
|
|
1999
|
28 |
4 |
p. 364-368
|
artikel
|
| 2 |
Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe
|
Eddy, C. R.
|
|
|
28 |
4 |
p. 347-354
|
artikel
|
| 3 |
Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe
|
Eddy, C. R.
|
|
1999
|
28 |
4 |
p. 347-354
|
artikel
|
| 4 |
Correlation between reliability and oxidation temperature for ultra-dry ultrathin silicon oxide films
|
Yamada, Hiroshi
|
|
|
28 |
4 |
p. 377-384
|
artikel
|
| 5 |
Correlation between reliability and oxidation temperature for ultra-dry ultrathin silicon oxide films
|
Yamada, Hiroshi
|
|
1999
|
28 |
4 |
p. 377-384
|
artikel
|
| 6 |
Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates
|
Giles, Luis Felipe
|
|
|
28 |
4 |
p. 372-376
|
artikel
|
| 7 |
Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates
|
Giles, Luis Felipe
|
|
1999
|
28 |
4 |
p. 372-376
|
artikel
|
| 8 |
Damage formation during 1.0 MeV Si self-implantation at low temperatures
|
Huang, M. B.
|
|
|
28 |
4 |
p. 385-389
|
artikel
|
| 9 |
Damage formation during 1.0 MeV Si self-implantation at low temperatures
|
Huang, M. B.
|
|
1999
|
28 |
4 |
p. 385-389
|
artikel
|
| 10 |
Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures
|
Kim, Youn Tae
|
|
|
28 |
4 |
p. 369-371
|
artikel
|
| 11 |
Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures
|
Kim, Youn Tae
|
|
1999
|
28 |
4 |
p. 369-371
|
artikel
|
| 12 |
Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method
|
Lee, Byoung Taek
|
|
|
28 |
4 |
p. L9-L12
|
artikel
|
| 13 |
Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method
|
Lee, Byoung Taek
|
|
1999
|
28 |
4 |
p. L9-L12
|
artikel
|
| 14 |
Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source
|
Dakshinamurthy, S.
|
|
|
28 |
4 |
p. 355-359
|
artikel
|
| 15 |
Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source
|
Dakshinamurthy, S.
|
|
1999
|
28 |
4 |
p. 355-359
|
artikel
|
| 16 |
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
|
Zheleva, Tsvetanka S.
|
|
|
28 |
4 |
p. L5-L8
|
artikel
|
| 17 |
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
|
Zheleva, Tsvetanka S.
|
|
1999
|
28 |
4 |
p. L5-L8
|
artikel
|
| 18 |
Photoreflectance study of Au-schottky contacts on n-GaN
|
Liu, Wei
|
|
|
28 |
4 |
p. 360-363
|
artikel
|
| 19 |
Photoreflectance study of Au-schottky contacts on n-GaN
|
Liu, Wei
|
|
1999
|
28 |
4 |
p. 360-363
|
artikel
|
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