| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the stress and interfacial reactions in Pt/Ti/SiO2/Si for use with ferroelectric thin films
|
Madsen, Lynnette D.
|
|
1998
|
27 |
5 |
p. 418-426
|
artikel
|
| 2 |
Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS
|
Docter, D. P.
|
|
1998
|
27 |
5 |
p. 479-483
|
artikel
|
| 3 |
Antisite arsenic incorporation in the low temperature MBE of gallium arsenide: Physics and modeling
|
Muthuvenkatraman, S.
|
|
1998
|
27 |
5 |
p. 472-478
|
artikel
|
| 4 |
Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance
|
Malikova, L.
|
|
1998
|
27 |
5 |
p. 484-487
|
artikel
|
| 5 |
Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In, Ga)Se2 solar cell materials
|
Schulz, Douglas L.
|
|
1998
|
27 |
5 |
p. 433-437
|
artikel
|
| 6 |
Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications
|
Lie, D. Y. C.
|
|
1998
|
27 |
5 |
p. 377-401
|
artikel
|
| 7 |
Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix
|
Rouvimov, S.
|
|
1998
|
27 |
5 |
p. 427-432
|
artikel
|
| 8 |
Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures
|
Lee, P. P.
|
|
1998
|
27 |
5 |
p. 405-408
|
artikel
|
| 9 |
Formation of InSb quantum dots in a GaSb matrix
|
Tsatsul’Nikov, A. F.
|
|
1998
|
27 |
5 |
p. 414-417
|
artikel
|
| 10 |
Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors
|
Garcia, J.
|
|
1998
|
27 |
5 |
p. 442-445
|
artikel
|
| 11 |
Hydrogen Induced Yellow Luminescence in GaN Grown by Halide Vapor Phase Epitaxy
|
Zhang, R.
|
|
1998
|
27 |
5 |
p. L35-L39
|
artikel
|
| 12 |
Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy
|
Kim, Joon-Hyung
|
|
1998
|
27 |
5 |
p. 466-471
|
artikel
|
| 13 |
Ohmic contacts formation of silicon schottky diodes by screen printing and rapid isothermal processing
|
Ratakonda, D.
|
|
1998
|
27 |
5 |
p. 402-404
|
artikel
|
| 14 |
On the Determination of Charge Profiles in Epitaxial Layers of ZnSe by Capacitance Measurements
|
Germain, M.
|
|
1998
|
27 |
5 |
p. L29-L31
|
artikel
|
| 15 |
Photoelectrochemical Capacitance-Voltage Measurements in GaN
|
Stutz, C. E.
|
|
1998
|
27 |
5 |
p. L26-L28
|
artikel
|
| 16 |
Selective area epitaxy of GaAs using tri-isopropylgallium
|
Zhang, Ruth
|
|
1998
|
27 |
5 |
p. 446-450
|
artikel
|
| 17 |
Structural and optical properties of GaxIn1−xP layers grown by chemical beam epitaxy
|
Seong, Tae-Yeon
|
|
1998
|
27 |
5 |
p. 409-413
|
artikel
|
| 18 |
Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers
|
Nugraha,
|
|
1998
|
27 |
5 |
p. 438-441
|
artikel
|
| 19 |
Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing
|
Kuriyama, K.
|
|
1998
|
27 |
5 |
p. 462-465
|
artikel
|
| 20 |
Wet Etching of (0001) GaN/Al2O3 grown by MOVPE
|
Kim, B. J.
|
|
1998
|
27 |
5 |
p. L32-L34
|
artikel
|
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