| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy
|
Eyink, K. G.
|
|
|
26 |
4 |
p. 391-396
|
artikel
|
| 2 |
A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy
|
Eyink, K. G.
|
|
1997
|
26 |
4 |
p. 391-396
|
artikel
|
| 3 |
Characterization of organic thin films for OLEDs using spectroscopic ellipsometry
|
Celii, Francis G.
|
|
|
26 |
4 |
p. 366-371
|
artikel
|
| 4 |
Characterization of organic thin films for OLEDs using spectroscopic ellipsometry
|
Celii, Francis G.
|
|
1997
|
26 |
4 |
p. 366-371
|
artikel
|
| 5 |
Chemical beam epitaxial growth of inp using EDMIn and BPE
|
Kim, C. W.
|
|
|
26 |
4 |
p. 355-360
|
artikel
|
| 6 |
Chemical beam epitaxial growth of inp using EDMIn and BPE
|
Kim, C. W.
|
|
1997
|
26 |
4 |
p. 355-360
|
artikel
|
| 7 |
Chemical vapor deposition and characterization of amorphous teflon fluoropolymerthin films
|
Sharangpani, R.
|
|
|
26 |
4 |
p. 402-409
|
artikel
|
| 8 |
Chemical vapor deposition and characterization of amorphous teflon fluoropolymerthin films
|
Sharangpani, R.
|
|
1997
|
26 |
4 |
p. 402-409
|
artikel
|
| 9 |
Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs
|
Youtz, A. E.
|
|
|
26 |
4 |
p. 372-375
|
artikel
|
| 10 |
Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs
|
Youtz, A. E.
|
|
1997
|
26 |
4 |
p. 372-375
|
artikel
|
| 11 |
Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)
|
Chen, Y.
|
|
|
26 |
4 |
p. 350-354
|
artikel
|
| 12 |
Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)
|
Chen, Y.
|
|
1997
|
26 |
4 |
p. 350-354
|
artikel
|
| 13 |
Effects of aluminum sputtering process parameters on via step coverage in micro-electronic device manufacturing
|
Depinto, G.
|
|
|
26 |
4 |
p. 376-382
|
artikel
|
| 14 |
Effects of aluminum sputtering process parameters on via step coverage in micro-electronic device manufacturing
|
Depinto, G.
|
|
1997
|
26 |
4 |
p. 376-382
|
artikel
|
| 15 |
Effects of trimethylindium on the purity of In0.5Al0.5P and In0.5Al0.5as epilayers grown by metalorganic chemical vapor deposition
|
Chen, J. C.
|
|
|
26 |
4 |
p. 361-365
|
artikel
|
| 16 |
Effects of trimethylindium on the purity of In0.5Al0.5P and In0.5Al0.5as epilayers grown by metalorganic chemical vapor deposition
|
Chen, J. C.
|
|
1997
|
26 |
4 |
p. 361-365
|
artikel
|
| 17 |
InAsSb/InTISb superlattice: A proposed heterostructure for long wavelength infrared detectors
|
Iyer, S.
|
|
|
26 |
4 |
p. 347-349
|
artikel
|
| 18 |
InAsSb/InTISb superlattice: A proposed heterostructure for long wavelength infrared detectors
|
Iyer, S.
|
|
1997
|
26 |
4 |
p. 347-349
|
artikel
|
| 19 |
Influence of AIN protective film thickness on the hardness and electrophotographic properties of organic photoconductors
|
Miao, X. S.
|
|
|
26 |
4 |
p. 387-390
|
artikel
|
| 20 |
Influence of AIN protective film thickness on the hardness and electrophotographic properties of organic photoconductors
|
Miao, X. S.
|
|
1997
|
26 |
4 |
p. 387-390
|
artikel
|
| 21 |
InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier
|
Uchibori, Chihiro J.
|
|
|
26 |
4 |
p. 410-414
|
artikel
|
| 22 |
InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier
|
Uchibori, Chihiro J.
|
|
1997
|
26 |
4 |
p. 410-414
|
artikel
|
| 23 |
Role of interfacial-charge in the growth of GaN on α-SiC
|
Ren, Shang Yuan
|
|
|
26 |
4 |
p. 341-346
|
artikel
|
| 24 |
Role of interfacial-charge in the growth of GaN on α-SiC
|
Ren, Shang Yuan
|
|
1997
|
26 |
4 |
p. 341-346
|
artikel
|
| 25 |
Scanning tunneling potentiometry study of electron reflectivity of a single grain boundary in thin gold films
|
Schneider, M. A.
|
|
|
26 |
4 |
p. 383-386
|
artikel
|
| 26 |
Scanning tunneling potentiometry study of electron reflectivity of a single grain boundary in thin gold films
|
Schneider, M. A.
|
|
1997
|
26 |
4 |
p. 383-386
|
artikel
|
| 27 |
Study of amorphous Ta2O5 thin films by DC magnetron reactive sputtering
|
Chen, K.
|
|
|
26 |
4 |
p. 397-401
|
artikel
|
| 28 |
Study of amorphous Ta2O5 thin films by DC magnetron reactive sputtering
|
Chen, K.
|
|
1997
|
26 |
4 |
p. 397-401
|
artikel
|
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