| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga0.47In0.53As/InP single quantum well
|
Guillot, C.
|
|
|
26 |
2 |
p. L6-L8
|
artikel
|
| 2 |
Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga0.47In0.53As/InP single quantum well
|
Guillot, C.
|
|
1997
|
26 |
2 |
p. L6-L8
|
artikel
|
| 3 |
An empirical relation between the melting point and the direct bandgap of semiconducting compounds
|
Nag, B. R.
|
|
|
26 |
2 |
p. 70-72
|
artikel
|
| 4 |
An empirical relation between the melting point and the direct bandgap of semiconducting compounds
|
Nag, B. R.
|
|
1997
|
26 |
2 |
p. 70-72
|
artikel
|
| 5 |
Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications
|
Park, Byung Lyul
|
|
|
26 |
2 |
p. L1-L5
|
artikel
|
| 6 |
Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications
|
Park, Byung Lyul
|
|
1997
|
26 |
2 |
p. L1-L5
|
artikel
|
| 7 |
Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE
|
Lew, A. Y.
|
|
|
26 |
2 |
p. 64-69
|
artikel
|
| 8 |
Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE
|
Lew, A. Y.
|
|
1997
|
26 |
2 |
p. 64-69
|
artikel
|
| 9 |
Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode
|
Kim, Dae-Woo
|
|
|
26 |
2 |
p. 83-89
|
artikel
|
| 10 |
Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode
|
Kim, Dae-Woo
|
|
1997
|
26 |
2 |
p. 83-89
|
artikel
|
| 11 |
Magnetic and photomagnetic properties of polycrystalline wide-gap semiconductor Cd1-xMnxTe thin films
|
He, X. -F.
|
|
|
26 |
2 |
p. 73-77
|
artikel
|
| 12 |
Magnetic and photomagnetic properties of polycrystalline wide-gap semiconductor Cd1-xMnxTe thin films
|
He, X. -F.
|
|
1997
|
26 |
2 |
p. 73-77
|
artikel
|
| 13 |
Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs
|
Kuo, L. H.
|
|
|
26 |
2 |
p. 53-63
|
artikel
|
| 14 |
Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs
|
Kuo, L. H.
|
|
1997
|
26 |
2 |
p. 53-63
|
artikel
|
| 15 |
Study of metal-polymer adhesion—A new technology: Cu plasma PIB
|
Yang, G. -R.
|
|
|
26 |
2 |
p. 78-82
|
artikel
|
| 16 |
Study of metal-polymer adhesion—A new technology: Cu plasma PIB
|
Yang, G. -R.
|
|
1997
|
26 |
2 |
p. 78-82
|
artikel
|
| 17 |
Substitutional-interstitial silver diffusion and drift in bulk (cadmium,mercury) telluride: Results and mechanistic implications
|
Lyubomirsky, Igor
|
|
|
26 |
2 |
p. 97-105
|
artikel
|
| 18 |
Substitutional-interstitial silver diffusion and drift in bulk (cadmium,mercury) telluride: Results and mechanistic implications
|
Lyubomirsky, Igor
|
|
1997
|
26 |
2 |
p. 97-105
|
artikel
|
| 19 |
The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact
|
Waytena, G. L.
|
|
|
26 |
2 |
p. 90-96
|
artikel
|
| 20 |
The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact
|
Waytena, G. L.
|
|
1997
|
26 |
2 |
p. 90-96
|
artikel
|
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