| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abstracts
|
|
|
1992
|
26 |
1 |
p. 52-113
|
artikel
|
| 2 |
A Mössbauer Study of Tin-Based Intermetallics Formed During the Manufacture of Dispersion-Strengthened Composite Solders
|
Reno, Robert C.
|
|
1992
|
26 |
1 |
p. 11-15
|
artikel
|
| 3 |
Anomalous Lateral Zn Surface Diffusion in InP Caused by Zn-Contained Metallization
|
Paek, Moon-Ho
|
|
1992
|
26 |
1 |
p. 25-29
|
artikel
|
| 4 |
Beryllium Ion Implantation into GaAs and Pseudomorphic AIGaAs/lnGaAs/GaAs Heterostructure
|
Thiery, J. F.
|
|
1992
|
26 |
1 |
p. 16-20
|
artikel
|
| 5 |
Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
|
Wang, Kun
|
|
1992
|
26 |
1 |
p. 1-6
|
artikel
|
| 6 |
Effect of SiO2 Powder on Mirror Polishing of InP Wafers
|
Morisawa, Yuji
|
|
1992
|
26 |
1 |
p. 34-36
|
artikel
|
| 7 |
Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors
|
Sengupta, D.K.
|
|
1992
|
26 |
1 |
p. 43-51
|
artikel
|
| 8 |
Optical Properties and Reactive Sputtering Conditions of AIN and AlSiN Thin Films for Magneto- Optical Applications
|
Miao, X. S.
|
|
1992
|
26 |
1 |
p. 21-24
|
artikel
|
| 9 |
Subnanometer Analysis and Modeling of MBE Grown InP Based MODFETs
|
Seaford, Matthew
|
|
1992
|
26 |
1 |
p. 30-33
|
artikel
|
| 10 |
Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films
|
Chui, H. C.
|
|
1992
|
26 |
1 |
p. 37-42
|
artikel
|
| 11 |
Zn-Doped InGaP Grown by the LP- MOCVD
|
Kúdela, R.
|
|
1992
|
26 |
1 |
p. 7-10
|
artikel
|
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