| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CCD on GaAs
|
Hayes, A.J.
|
|
1985
|
129 |
1-3 |
p. 521-523
3 p.
|
artikel
|
| 2 |
A comparison between SIMS and spreading resistance profiles for ion implanted arsenic and boron after heat treatments in an inert ambient
|
Godfrey, DJ
|
|
1985
|
129 |
1-3 |
p. 181-186
6 p.
|
artikel
|
| 3 |
A mixed technology high voltage process
|
Saunders, MP
|
|
1985
|
129 |
1-3 |
p. 260-264
5 p.
|
artikel
|
| 4 |
A Monte Carlo particle model of hot electron injection
|
Moglestue, C.
|
|
1985
|
129 |
1-3 |
p. 552-556
5 p.
|
artikel
|
| 5 |
A new formulation of the early effect in lateral PNP transistors
|
Schneider, Márcio Cherem
|
|
1985
|
129 |
1-3 |
p. 327-331
5 p.
|
artikel
|
| 6 |
A new GaAs photodetector in the 0.8 – 1.4 μ wavelength range
|
Horikoshi, Y.
|
|
1985
|
129 |
1-3 |
p. 483-487
5 p.
|
artikel
|
| 7 |
Annealing effects in silicon nitride encapsulant films
|
Szweda, Roy
|
|
1985
|
129 |
1-3 |
p. 435-439
5 p.
|
artikel
|
| 8 |
An optimized 0.3 μm N-MOS transistor
|
Guegan, G.
|
|
1985
|
129 |
1-3 |
p. 291-295
5 p.
|
artikel
|
| 9 |
Avalanche generator triggered picosecond light pulses from unbiased V-groove GaAs/GaAlAs lasers
|
Bimberg, D.
|
|
1985
|
129 |
1-3 |
p. 469-472
4 p.
|
artikel
|
| 10 |
Bombardment Induced Strengthening Of Nitride (BISON) a novel effect in the etch properties of ion implanted LPCVD - Si3N4
|
van Ommen, A.H.
|
|
1985
|
129 |
1-3 |
p. 220-223
4 p.
|
artikel
|
| 11 |
Buried recombination layers with enhanced n-type conductivity for silicon power devices
|
Wondrak, Wolfgang
|
|
1985
|
129 |
1-3 |
p. 322-326
5 p.
|
artikel
|
| 12 |
Characterisation and modelling of SIPOS on silicon planar devices
|
Sandoe, J.N.
|
|
1985
|
129 |
1-3 |
p. 234-239
6 p.
|
artikel
|
| 13 |
Characterization of TaSi2-films prepared by sputtering from compound targets
|
Gant, H.
|
|
1985
|
129 |
1-3 |
p. 197-200
4 p.
|
artikel
|
| 14 |
Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model
|
Penning de Vries, R.G.M.
|
|
1985
|
129 |
1-3 |
p. 301-305
5 p.
|
artikel
|
| 15 |
Chemical and structural characterisation of III–V epitaxial layers
|
Cardwell, M.J.
|
|
1985
|
129 |
1-3 |
p. 81-91
11 p.
|
artikel
|
| 16 |
Conference committees
|
|
|
1985
|
129 |
1-3 |
p. vi-
1 p.
|
artikel
|
| 17 |
Current limiting cathodes for non transit-time limited operation of InP TED's in the 100 GHz window
|
Friscouri, Marie-Renée
|
|
1985
|
129 |
1-3 |
p. 527-531
5 p.
|
artikel
|
| 18 |
Dark current processes in InP/GaInAs heterostructure APDs
|
Sussmann, R.S.
|
|
1985
|
129 |
1-3 |
p. 473-477
5 p.
|
artikel
|
| 19 |
Deep-centers distribution in semiconductor-surface revealed by a local photoluminescence technique
|
Lauret, Nicole
|
|
1985
|
129 |
1-3 |
p. 417-421
5 p.
|
artikel
|
| 20 |
Design and fabrication process of GaAsGaAlAs ECL inverters
|
Ankri, D.
|
|
1985
|
129 |
1-3 |
p. 361-365
5 p.
|
artikel
|
| 21 |
Determination of transport coefficients by transient photoconductivity measurements
|
Gasquet, D.
|
|
1985
|
129 |
1-3 |
p. 524-526
3 p.
|
artikel
|
| 22 |
Diffused GaSb photodiode in planar technology
|
Schmidt auf Altenstadt, W.
|
|
1985
|
129 |
1-3 |
p. 497-500
4 p.
|
artikel
|
| 23 |
Discrete and integrated MOS power technologies
|
Rossel, Pierre
|
|
1985
|
129 |
1-3 |
p. 33-52
20 p.
|
artikel
|
| 24 |
2-D numerical simulation of the charge transfer in GaAs B.C.C.D.'s in the GHz range
|
Sodini, D.
|
|
1985
|
129 |
1-3 |
p. 568-572
5 p.
|
artikel
|
| 25 |
2-D particle modelling of the InP misfet and comparison with Si MOSFET
|
Mouis, M.
|
|
1985
|
129 |
1-3 |
p. 557-562
6 p.
|
artikel
|
| 26 |
EBIC profiling of bevelled samples: A precise method to determine the position of p-n junctions and doping gradients
|
Marten, Hans Wolfgang
|
|
1985
|
129 |
1-3 |
p. 306-311
6 p.
|
artikel
|
| 27 |
Editorial Board
|
|
|
1985
|
129 |
1-3 |
p. IFC-
1 p.
|
artikel
|
| 28 |
Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors
|
Lugli, P.
|
|
1985
|
129 |
1-3 |
p. 532-536
5 p.
|
artikel
|
| 29 |
Electrical characterisation of oxygen implanted silicon substrates
|
Foster, D.J.
|
|
1985
|
129 |
1-3 |
p. 171-175
5 p.
|
artikel
|
| 30 |
Electron traps in B+-implanted SiO2
|
Offenberg, M.
|
|
1985
|
129 |
1-3 |
p. 240-244
5 p.
|
artikel
|
| 31 |
Epitaxial growth and assessment of p-type GaAs by chloride VPE
|
Goodridge, I.H.
|
|
1985
|
129 |
1-3 |
p. 408-412
5 p.
|
artikel
|
| 32 |
Ether: A software simulating the electrical behaviour of heterostructure devices
|
Caquot, E.
|
|
1985
|
129 |
1-3 |
p. 356-360
5 p.
|
artikel
|
| 33 |
Fabrication and properties of antenna-coupled thin-film warm carrier devices
|
Yasuoka, Yoshizumi
|
|
1985
|
129 |
1-3 |
p. 516-520
5 p.
|
artikel
|
| 34 |
Formation of palladium and titanium silicides by rapid thermal annealing
|
Levy, D.
|
|
1985
|
129 |
1-3 |
p. 205-209
5 p.
|
artikel
|
| 35 |
GaAsAlGaAs MQW and GRINSCH lasers grown by molecular beam epitaxy
|
Weimann, G.
|
|
1985
|
129 |
1-3 |
p. 459-464
6 p.
|
artikel
|
| 36 |
12 GHz low noise and low cost GaAs FET's for home use
|
Aoki, Tsuneyoshi
|
|
1985
|
129 |
1-3 |
p. 371-375
5 p.
|
artikel
|
| 37 |
Graphic display processor evolution
|
Pillou, Jean-Pierre
|
|
1985
|
129 |
1-3 |
p. 139-157
19 p.
|
artikel
|
| 38 |
High power performance of double channel mesa laser
|
Collar, A.
|
|
1985
|
129 |
1-3 |
p. 455-458
4 p.
|
artikel
|
| 39 |
High resolution capacitance spectroscopy of LPE In0.53Ga0.47As grown on Fe doped InP-substrate and VPE GaAs grown on Cr-doped GaAs-substrate
|
Brauchle, K.-A.
|
|
1985
|
129 |
1-3 |
p. 426-429
4 p.
|
artikel
|
| 40 |
High transconductance InP MISFET'S with double layer gate insulator
|
Dimitriou, P.
|
|
1985
|
129 |
1-3 |
p. 399-402
4 p.
|
artikel
|
| 41 |
Hydrogenated amorphous-silicon bipolar transistors
|
Nara, Yasuo
|
|
1985
|
129 |
1-3 |
p. 342-345
4 p.
|
artikel
|
| 42 |
III–V photoconductive detectors : Gain and noise studies
|
Vilcot, Jean Pierre
|
|
1985
|
129 |
1-3 |
p. 488-492
5 p.
|
artikel
|
| 43 |
Influence of Al-poly Si interactions on electrical properties of MOS capacitors
|
Dutoit, M.
|
|
1985
|
129 |
1-3 |
p. 255-259
5 p.
|
artikel
|
| 44 |
Influence of process parameters on reverse currents of emitter/base junctions
|
Beck, S.
|
|
1985
|
129 |
1-3 |
p. 312-316
5 p.
|
artikel
|
| 45 |
Influence of stoechiometry and hydrogen bonding on the insulating properties of PECVD silicon nitride
|
Chaussat, C.
|
|
1985
|
129 |
1-3 |
p. 215-219
5 p.
|
artikel
|
| 46 |
Lasers for integrated optoelectronics
|
Bouley, Jean-Claude
|
|
1985
|
129 |
1-3 |
p. 107-118
12 p.
|
artikel
|
| 47 |
Liquid phase epitaxy of silicon: Potentials and prospects
|
Käss, D.
|
|
1985
|
129 |
1-3 |
p. 161-165
5 p.
|
artikel
|
| 48 |
List of contributors
|
|
|
1985
|
129 |
1-3 |
p. 583-585
3 p.
|
artikel
|
| 49 |
Measurement of diffusion length and surface recombination velocity in Interdigitated Back Contact (IBC) and Front Surface Field (FSF) solar cells
|
Verlinden, Pierre
|
|
1985
|
129 |
1-3 |
p. 317-321
5 p.
|
artikel
|
| 50 |
Method for modeling the noise of submicron devices
|
Nougier, J.P.
|
|
1985
|
129 |
1-3 |
p. 580-582
3 p.
|
artikel
|
| 51 |
MIS-structures as memories for optical information
|
Engström, Olof
|
|
1985
|
129 |
1-3 |
p. 506-510
5 p.
|
artikel
|
| 52 |
Modelling of d.c. characteristics of heterojunction bipolar transistor processed with MBE or MOCVD techniques
|
Dangla, J.
|
|
1985
|
129 |
1-3 |
p. 366-370
5 p.
|
artikel
|
| 53 |
Molecular beam epitaxy of III–V compounds
|
Künzel, H.
|
|
1985
|
129 |
1-3 |
p. 66-80
15 p.
|
artikel
|
| 54 |
Monolithic integrated photoreceiver implemented with Ga1−xAlx As/GaAs heterojunction bipolar phototransistor
|
Wang, H.
|
|
1985
|
129 |
1-3 |
p. 478-482
5 p.
|
artikel
|
| 55 |
MOSFET miniaturization — From one micron to the limits
|
Dennard, Robert H.
|
|
1985
|
129 |
1-3 |
p. 3-15
13 p.
|
artikel
|
| 56 |
MOS isolation technology
|
Oldham, W.G.
|
|
1985
|
129 |
1-3 |
p. 53-65
13 p.
|
artikel
|
| 57 |
Negative capacitance in switching MISS devices
|
Millán, J.
|
|
1985
|
129 |
1-3 |
p. 351-355
5 p.
|
artikel
|
| 58 |
New aspects of the power limitations in the GaAs MESFETs
|
Crosnier, Yves
|
|
1985
|
129 |
1-3 |
p. 394-398
5 p.
|
artikel
|
| 59 |
New heterojunction devices by band-gap engineering
|
Capasso, Federico
|
|
1985
|
129 |
1-3 |
p. 92-106
15 p.
|
artikel
|
| 60 |
New observations on the electrical properties and instabilities of pure and metal doped SiO2 films
|
Krishna, K.V.
|
|
1985
|
129 |
1-3 |
p. 245-248
4 p.
|
artikel
|
| 61 |
Noise in Permeable Base Transistors (PBTs)
|
Zhu, X.C.
|
|
1985
|
129 |
1-3 |
p. 573-577
5 p.
|
artikel
|
| 62 |
Noise in two dimensional electron gas field effect transistor
|
Cappy, Alain
|
|
1985
|
129 |
1-3 |
p. 380-384
5 p.
|
artikel
|
| 63 |
Optical measurement of gain coefficients in Ga0.47In0.53As
|
Zielinski, E.
|
|
1985
|
129 |
1-3 |
p. 450-454
5 p.
|
artikel
|
| 64 |
Particle simulation of impact ionization: Application of MM-wave IMPATT devices
|
Lippens, Didier
|
|
1985
|
129 |
1-3 |
p. 547-551
5 p.
|
artikel
|
| 65 |
Photoconductance laser spot scanning applied to the study of polysilicon defect passivation
|
Mathian, Gérard
|
|
1985
|
129 |
1-3 |
p. 229-233
5 p.
|
artikel
|
| 66 |
Photoluminescence studies of GaxIn1−xAsyP1−y lattice-matched to InP
|
Charreaux, Claudine
|
|
1985
|
129 |
1-3 |
p. 413-416
4 p.
|
artikel
|
| 67 |
Plasma assisted growth of thin oxynitride films
|
Graham, WK
|
|
1985
|
129 |
1-3 |
p. 224-228
5 p.
|
artikel
|
| 68 |
Platinum silicide shallow contacts for CMOS integrated circuits
|
Maguire, P
|
|
1985
|
129 |
1-3 |
p. 201-204
4 p.
|
artikel
|
| 69 |
Potential of digital differential voltage contrast for the observation of latch-up phenomena in CMOS ICs
|
Fantini, F.
|
|
1985
|
129 |
1-3 |
p. 275-277
3 p.
|
artikel
|
| 70 |
Preface
|
Noblanc, J.P.
|
|
1985
|
129 |
1-3 |
p. v-
1 p.
|
artikel
|
| 71 |
Quantum 1/f noise phenomena in semiconductor noise
|
van der Ziel, A.
|
|
1985
|
129 |
1-3 |
p. 578-579
2 p.
|
artikel
|
| 72 |
Quasi-two-dimensional simulations of bipolar silicon power transistors
|
Nowak, Wolf-Dieter
|
|
1985
|
129 |
1-3 |
p. 337-341
5 p.
|
artikel
|
| 73 |
Rapid thermal processing for simultaneous annealing of shallow implanted junctions and formation of their TiSi2 contacts
|
Maex, K.
|
|
1985
|
129 |
1-3 |
p. 192-196
5 p.
|
artikel
|
| 74 |
Recent results on SIS mixers at LETI (Grenoble) and ENS (Paris) with Nb/Ox/PbIn and NbN/Ox/PbIn junctions
|
Regent, A.
|
|
1985
|
129 |
1-3 |
p. 511-515
5 p.
|
artikel
|
| 75 |
Safe operating area of the MOS'T : Second breakdown limitations
|
Tranduc, H.
|
|
1985
|
129 |
1-3 |
p. 286-290
5 p.
|
artikel
|
| 76 |
Sensitivity improvement for fast GaAs photoconductive detectors
|
Pascal, D.
|
|
1985
|
129 |
1-3 |
p. 493-496
4 p.
|
artikel
|
| 77 |
Shallow junction source/drain regions in CMOS/VLSI technologies
|
Yallup, K.J.
|
|
1985
|
129 |
1-3 |
p. 269-274
6 p.
|
artikel
|
| 78 |
Shallow source-drain structures for VLSI CMOS technology
|
Butler, AL
|
|
1985
|
129 |
1-3 |
p. 265-268
4 p.
|
artikel
|
| 79 |
Short wavelength (visible) quantum well lasers grown by molecular beam epitaxy
|
Blood, P.
|
|
1985
|
129 |
1-3 |
p. 465-468
4 p.
|
artikel
|
| 80 |
Simulation of deep depleted SOI MOSFET's with back potential control
|
Balestra, Francis
|
|
1985
|
129 |
1-3 |
p. 296-300
5 p.
|
artikel
|
| 81 |
Small signal and noise modelling of submicrometer dual-gate GaAs MESFET. As an active three-port network
|
Allamando, Etienne
|
|
1985
|
129 |
1-3 |
p. 390-393
4 p.
|
artikel
|
| 82 |
Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's
|
Rocchi, Marc
|
|
1985
|
129 |
1-3 |
p. 119-138
20 p.
|
artikel
|
| 83 |
Study of two-dimensional gas transport properties: An approach to electron transport in TEGFETs
|
Zimmermann, J.
|
|
1985
|
129 |
1-3 |
p. 385-389
5 p.
|
artikel
|
| 84 |
Technology and modeling for MOS IC/VLSI'S - state of the art -
|
Nishi, Yoshio
|
|
1985
|
129 |
1-3 |
p. 16-32
17 p.
|
artikel
|
| 85 |
Temperature and doping dependence of the fundamental surface recombination velocity
|
Ghannam, M.
|
|
1985
|
129 |
1-3 |
p. 283-285
3 p.
|
artikel
|
| 86 |
Temperature behaviour of mobility is submicron MOSFETs: Possibility of nearly-ballistic transport?
|
Cristoloveanu, Sorin
|
|
1985
|
129 |
1-3 |
p. 542-546
5 p.
|
artikel
|
| 87 |
Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation
|
Cristoloveanu, S.
|
|
1985
|
129 |
1-3 |
p. 249-254
6 p.
|
artikel
|
| 88 |
The BARITT diode — A low noise heterodyne photodetector with high integral gain
|
Jäger, D.
|
|
1985
|
129 |
1-3 |
p. 501-505
5 p.
|
artikel
|
| 89 |
The characterisation of GaAs NiAuGe ohmic contacts alloyed with an SiO2 overlayer for use in an ion implanted MESFET technology
|
Allan, David A
|
|
1985
|
129 |
1-3 |
p. 445-449
5 p.
|
artikel
|
| 90 |
The dispersion and instability of the work function difference in MOS structures
|
Krawczyk, S.K.
|
|
1985
|
129 |
1-3 |
p. 278-282
5 p.
|
artikel
|
| 91 |
The observation of deep donor levels in epitaxially regrown implanted silicon
|
Brotherton, S.D.
|
|
1985
|
129 |
1-3 |
p. 166-170
5 p.
|
artikel
|
| 92 |
Theoretical and experimental temperature dependence of GaAs N-off IC's over 120 K to 400 K
|
Gabillard, Bertrand
|
|
1985
|
129 |
1-3 |
p. 403-407
5 p.
|
artikel
|
| 93 |
The use of ion beam mixing and rapid thermal annealing in the formation of tungsten and molybdenum silicides
|
Beale, MIJ
|
|
1985
|
129 |
1-3 |
p. 210-214
5 p.
|
artikel
|
| 94 |
Three dimensional implantation profiles
|
Ashworth, David G.
|
|
1985
|
129 |
1-3 |
p. 176-180
5 p.
|
artikel
|
| 95 |
TiW silicide-gate technology for self-aligned GaAs FET
|
Gill, SS
|
|
1985
|
129 |
1-3 |
p. 430-434
5 p.
|
artikel
|
| 96 |
Totally light controlled static induction thyristor
|
Nishizawa, Jun-ichi
|
|
1985
|
129 |
1-3 |
p. 346-350
5 p.
|
artikel
|
| 97 |
Transient annealing for the production of n+ contact layers in GaAs
|
Gwilliam, Russell
|
|
1985
|
129 |
1-3 |
p. 440-444
5 p.
|
artikel
|
| 98 |
Transient capacitance spectroscopy in heavily compensated materials
|
Stievenard, D.
|
|
1985
|
129 |
1-3 |
p. 422-425
4 p.
|
artikel
|
| 99 |
Transport in silicon monolithic hot electron structures
|
Herbert, D.C.
|
|
1985
|
129 |
1-3 |
p. 537-541
5 p.
|
artikel
|
| 100 |
Two-dimensional coupled diffusion modeling
|
Pichler, P.
|
|
1985
|
129 |
1-3 |
p. 187-191
5 p.
|
artikel
|
| 101 |
Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge-control relation
|
Schröter, M.
|
|
1985
|
129 |
1-3 |
p. 332-336
5 p.
|
artikel
|
| 102 |
Two dimensional Monte Carlo simulation of an injection modulated M.I.S.F.E.T. structure
|
Fauquembergue, R.
|
|
1985
|
129 |
1-3 |
p. 563-567
5 p.
|
artikel
|
| 103 |
Ultra low noise and high frequency operation of TEGFETS made by MBE
|
Laviron, M.
|
|
1985
|
129 |
1-3 |
p. 376-379
4 p.
|
artikel
|
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