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Modelling of d.c. characteristics of heterojunction bipolar transistor processed with MBE or MOCVD techniques |
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Title: |
Modelling of d.c. characteristics of heterojunction bipolar transistor processed with MBE or MOCVD techniques |
Author: |
Dangla, J. Caquot, E. Dubon, C. Campana, M. Azoulay, R. Alexandre, F. Lievin, J. Palmier, J.F. Ankri, D. |
Appeared in: |
Physica. B+C, Low temperature and solid state physics + Atomic, molecular and plasma physics optics |
Paging: |
Volume 129 (1985) nr. 1-3 pages 5 p. |
Year: |
1985 |
Contents: |
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Publisher: |
Published by Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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