| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Annealing effect for structural morphology of ZnO film on SiO2 substrates
|
Kim, Hyoun Woo
|
|
2004
|
7 |
1-2 |
p. 1-6
6 p.
|
artikel
|
| 2 |
Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation
|
Yu, Min
|
|
2004
|
7 |
1-2 |
p. 13-17
5 p.
|
artikel
|
| 3 |
Defect study on Nanoglass® E porous ultra-low k material (k∼2.2) for ultra-large-scale integration applications
|
Zhang, L.
|
|
2004
|
7 |
1-2 |
p. 89-93
5 p.
|
artikel
|
| 4 |
Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs
|
Li, Z.C
|
|
2004
|
7 |
1-2 |
p. 19-25
7 p.
|
artikel
|
| 5 |
Effect of deposition conditions and annealing on W Schottky contacts on n-GaN
|
Mehandru, R
|
|
2004
|
7 |
1-2 |
p. 95-98
4 p.
|
artikel
|
| 6 |
Improvement of gate CD imbalance for a 0.35μm logic technology
|
Joung, Yang Hee
|
|
2004
|
7 |
1-2 |
p. 51-54
4 p.
|
artikel
|
| 7 |
Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus
|
Lin, C.S.
|
|
2004
|
7 |
1-2 |
p. 59-62
4 p.
|
artikel
|
| 8 |
InGaP/GaAs HBT implantation leakage current and electrical breakdown
|
Shen, Hong
|
|
2004
|
7 |
1-2 |
p. 63-68
6 p.
|
artikel
|
| 9 |
Modeling of silicon atoms diffusion in GaAs in view of nonuniform distribution of point defects
|
Saad, A.M
|
|
2004
|
7 |
1-2 |
p. 27-33
7 p.
|
artikel
|
| 10 |
New experimental observations of single electron trapping properties of Si nanoclusters in SRO obtained by LPCVD
|
Yu, Zhenrui
|
|
2004
|
7 |
1-2 |
p. 45-50
6 p.
|
artikel
|
| 11 |
Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe
|
Polyakov, A.Y.
|
|
2004
|
7 |
1-2 |
p. 77-81
5 p.
|
artikel
|
| 12 |
Schottky diode based on composite organic semiconductors
|
Gupta, R.K
|
|
2004
|
7 |
1-2 |
p. 83-87
5 p.
|
artikel
|
| 13 |
SiC and Si3N4 inclusions in multicrystalline silicon ingots
|
Søiland, A.K
|
|
2004
|
7 |
1-2 |
p. 39-43
5 p.
|
artikel
|
| 14 |
Structure, optical and DC conduction mechanism of amorphous GaSe thin films
|
Thamilselvan, M
|
|
2004
|
7 |
1-2 |
p. 69-75
7 p.
|
artikel
|
| 15 |
Sub-100nm T-gate fabrication using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure at 50kV e-beam lithography
|
Kim, S.C
|
|
2004
|
7 |
1-2 |
p. 7-11
5 p.
|
artikel
|
| 16 |
The rapid amorphisation of In0.53Ga0.47As relative to both InAs and GaAs
|
Wesch, W
|
|
2004
|
7 |
1-2 |
p. 35-38
4 p.
|
artikel
|
| 17 |
Thermodynamic study of AIIIBVI compounds oxidation
|
Balitskii, O.A
|
|
2004
|
7 |
1-2 |
p. 55-58
4 p.
|
artikel
|
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