| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A calculation of diffusion parameters for Cu/Ta and Ta/Si interfaces in Cu/Ta/Si(111) structure
|
Moshfegh, A.Z.
|
|
2003
|
6 |
4 |
p. 165-170
6 p.
|
artikel
|
| 2 |
Anisotropic etching of the silicon crystal-surface free energy model
|
Łysko, Jan M.
|
|
2003
|
6 |
4 |
p. 235-241
7 p.
|
artikel
|
| 3 |
Annealing and activation of silicon implanted in semi-insulating InP substrates
|
Dong, H.W
|
|
2003
|
6 |
4 |
p. 215-218
4 p.
|
artikel
|
| 4 |
{311} Defect evolution in Si-implanted Si1−x Ge x alloys
|
Crosby, Robert T.
|
|
2003
|
6 |
4 |
p. 205-208
4 p.
|
artikel
|
| 5 |
Effects of heat treatment on electroless copper-deposited film in TaN diffusion barrier
|
Lee, Yong Sun
|
|
2003
|
6 |
4 |
p. 209-213
5 p.
|
artikel
|
| 6 |
Epi-n-ZnO/〈100〉 Si, GaAs and InP by L-MBE: a novel approach for III–V devices
|
Ramamoorthy, K.
|
|
2003
|
6 |
4 |
p. 219-224
6 p.
|
artikel
|
| 7 |
MOVPE growth of Si-doped GaAs and Al x Ga1−x As using tertiarybutylarsine (TBA) in pure N2 ambient
|
Huang, G.S.
|
|
2003
|
6 |
4 |
p. 171-174
4 p.
|
artikel
|
| 8 |
Patents Alert
|
|
|
2003
|
6 |
4 |
p. 243-245
3 p.
|
artikel
|
| 9 |
Seed layer corrosion of Damascene structures in copper sulfate electrolytes
|
Martyak, Nicholas M.
|
|
2003
|
6 |
4 |
p. 225-233
9 p.
|
artikel
|
| 10 |
Texture of Cu and dilute binary Cu-alloy films: impact of annealing and solute content
|
Barmak, K
|
|
2003
|
6 |
4 |
p. 175-184
10 p.
|
artikel
|
| 11 |
The effect of In doping on some physical properties of CdS films
|
Atay, F.
|
|
2003
|
6 |
4 |
p. 197-203
7 p.
|
artikel
|
| 12 |
The effect of variation of the WF6 flow rate on the contact resistance in the DCS-based WSi x deposition
|
Joung, Yang Hee
|
|
2003
|
6 |
4 |
p. 185-191
7 p.
|
artikel
|
| 13 |
Zn distribution and location, luminescence measurement after Zn channeled implantation in GaN and RTA annealing
|
Ding, F.-R.
|
|
2003
|
6 |
4 |
p. 193-195
3 p.
|
artikel
|
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