| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Challenges for signal integrity prediction in the next decade
|
Aragones, Xavier
|
|
2003
|
6 |
1-3 |
p. 107-117
11 p.
|
artikel
|
| 2 |
Coherent leakage current in mesoscopic MIS-type capacitors
|
Racec, P.N.
|
|
2003
|
6 |
1-3 |
p. 129-135
7 p.
|
artikel
|
| 3 |
Coulomb and bandstructure effects in the intersubband optical spectra of III–V quantum wells
|
Pereira Jr., M.F.
|
|
2003
|
6 |
1-3 |
p. 149-152
4 p.
|
artikel
|
| 4 |
Device simulation for decananometer MOSFETs
|
Sangiorgi, Enrico
|
|
2003
|
6 |
1-3 |
p. 93-105
13 p.
|
artikel
|
| 5 |
Diffusion of Sr, Bi, and Ta in amorphous SiO2
|
Büngener, Ralf
|
|
2003
|
6 |
1-3 |
p. 43-48
6 p.
|
artikel
|
| 6 |
Electronic spectral densities and optical spectra of quantum dot aggregates in sub-wetting layer region
|
Král, Karel
|
|
2003
|
6 |
1-3 |
p. 143-147
5 p.
|
artikel
|
| 7 |
Fast mixed modeling of doping for statistical process/device simulation
|
Pfitzner, Andrzej
|
|
2003
|
6 |
1-3 |
p. 21-26
6 p.
|
artikel
|
| 8 |
Formation of ultrathin silicon oxides—modeling and technological constraints
|
Beck, Romuald B.
|
|
2003
|
6 |
1-3 |
p. 49-57
9 p.
|
artikel
|
| 9 |
High-frequency noise in SiGe HBTs
|
Herzel, Frank
|
|
2003
|
6 |
1-3 |
p. 119-127
9 p.
|
artikel
|
| 10 |
Modeling of optical nonlinearities based on engineering the semiconductor band
|
Zhao, G.
|
|
2003
|
6 |
1-3 |
p. 153-158
6 p.
|
artikel
|
| 11 |
Modeling the impact of stress on silicon processes and devices
|
Moroz, Victor
|
|
2003
|
6 |
1-3 |
p. 27-36
10 p.
|
artikel
|
| 12 |
Numerical simulation of the production processes of layered materials
|
Sibona, Gustavo J.
|
|
2003
|
6 |
1-3 |
p. 71-76
6 p.
|
artikel
|
| 13 |
Predictive use of ab initio MO methods in PDECB-based approach to low-temperature epitaxy of stoichiometric group-III nitrides
|
Hayashi, Keiji
|
|
2003
|
6 |
1-3 |
p. 159-164
6 p.
|
artikel
|
| 14 |
Static and dynamic analysis of failure locations and void formation in interconnects due to various migration mechanisms
|
Weide-Zaage, Kirsten
|
|
2003
|
6 |
1-3 |
p. 85-92
8 p.
|
artikel
|
| 15 |
Status and open problems in modeling of as-implanted damage in silicon
|
Hobler, G.
|
|
2003
|
6 |
1-3 |
p. 1-14
14 p.
|
artikel
|
| 16 |
The Pr2O3/Si(001) interface
|
Schmeißer, Dieter
|
|
2003
|
6 |
1-3 |
p. 59-70
12 p.
|
artikel
|
| 17 |
Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode
|
Karimov, A.V.
|
|
2003
|
6 |
1-3 |
p. 137-142
6 p.
|
artikel
|
| 18 |
Tracing the Ti-silicide formation by in situ ellipsometric measurements
|
Stark, T.
|
|
2003
|
6 |
1-3 |
p. 77-83
7 p.
|
artikel
|
| 19 |
Type and charge states of point defects in heavily As- and B-doped silicon
|
Nakabayashi, Y.
|
|
2003
|
6 |
1-3 |
p. 15-19
5 p.
|
artikel
|
| 20 |
Ultrathin oxynitridation process through ion implantation in a poly Si1−x Ge x gate MOS capacitor
|
Jacob, A.P.
|
|
2003
|
6 |
1-3 |
p. 37-41
5 p.
|
artikel
|
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