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Journal description
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Details for article 19 of 20 found articles
| Title: |
Type and charge states of point defects in heavily As- and B-doped silicon |
| Author: |
Nakabayashi, Y. Osman, H.I. Yokota, K. Toyonaga, K. Matsumoto, S. Murota, J. Wada, K. Abe, T. |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 6 (2003) nr. 1-3 pages 5 p. |
| Year: |
2003 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 19 of 20 found articles
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