| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A contribution to the identification of the E5 defect level as tri-vacancy (V3)
|
Junkes, Alexandra
|
|
2012
|
407 |
15 |
p. 3013-3015
3 p.
|
artikel
|
| 2 |
Characterisation of defects in p-GaN by admittance spectroscopy
|
Elsherif, O.S.
|
|
2012
|
407 |
15 |
p. 2960-2963
4 p.
|
artikel
|
| 3 |
Characterization of AgInS2 thin films prepared by vacuum evaporation
|
Akaki, Yoji
|
|
2012
|
407 |
15 |
p. 2858-2860
3 p.
|
artikel
|
| 4 |
Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
|
Asghar, M.
|
|
2012
|
407 |
15 |
p. 3041-3043
3 p.
|
artikel
|
| 5 |
Charge states of a hydrogen defect (3326cm−1 line) in ZnO
|
Herklotz, F.
|
|
2012
|
407 |
15 |
p. 2883-2885
3 p.
|
artikel
|
| 6 |
Chemical etching to dissolve dislocation cores in multicrystalline silicon
|
Gregori, N.J.
|
|
2012
|
407 |
15 |
p. 2970-2973
4 p.
|
artikel
|
| 7 |
Comparison between various finite-size supercell correction schemes for charged defect calculations
|
Komsa, Hannu-Pekka
|
|
2012
|
407 |
15 |
p. 3063-3067
5 p.
|
artikel
|
| 8 |
Computational materials design of filled tetrahedral compound magnetic semiconductors
|
Sato, K.
|
|
2012
|
407 |
15 |
p. 2950-2953
4 p.
|
artikel
|
| 9 |
Contents
|
|
|
2012
|
407 |
15 |
p. vii-ix
nvt p.
|
artikel
|
| 10 |
dc-Hydrogen plasma induced defects in bulk n-Ge
|
Nyamhere, C.
|
|
2012
|
407 |
15 |
p. 2935-2938
4 p.
|
artikel
|
| 11 |
Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy
|
Bharuth-Ram, K.
|
|
2012
|
407 |
15 |
p. 2923-2925
3 p.
|
artikel
|
| 12 |
Defect detection in semiconductor layers with built-in electric field with the use of cathodoluminescence
|
Pluska, Mariusz
|
|
2012
|
407 |
15 |
p. 2854-2857
4 p.
|
artikel
|
| 13 |
Defect-effects on the photoluminescence of ZrO2 bulk, film and nanocrystals
|
Mochizuki, Shosuke
|
|
2012
|
407 |
15 |
p. 2911-2914
4 p.
|
artikel
|
| 14 |
Device quality ZnO grown using a Filtered Cathodic Vacuum Arc
|
Elzwawi, Salim
|
|
2012
|
407 |
15 |
p. 2903-2906
4 p.
|
artikel
|
| 15 |
Editorial Board
|
|
|
2012
|
407 |
15 |
p. IFC-
1 p.
|
artikel
|
| 16 |
Effect of Co-doping content on hydrothermal derived ZnO array films
|
He, Xinhua
|
|
2012
|
407 |
15 |
p. 2895-2899
5 p.
|
artikel
|
| 17 |
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces
|
Noh, Hyeon-Kyun
|
|
2012
|
407 |
15 |
p. 2907-2910
4 p.
|
artikel
|
| 18 |
Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface
|
Ogawa, Masatoshi
|
|
2012
|
407 |
15 |
p. 3034-3037
4 p.
|
artikel
|
| 19 |
Evaluating effect of surface state density at the interfaces in degraded bulk heterojunction organic solar cell
|
Arora, Swati
|
|
2012
|
407 |
15 |
p. 3044-3046
3 p.
|
artikel
|
| 20 |
First-principles materials design of CuInSe2-based high-efficiency photovoltaic solar cells
|
Tani, Yoshimasa
|
|
2012
|
407 |
15 |
p. 3056-3058
3 p.
|
artikel
|
| 21 |
First principles study of electronic and structural properties of the Ge/GeO2 interface
|
Broqvist, Peter
|
|
2012
|
407 |
15 |
p. 2926-2931
6 p.
|
artikel
|
| 22 |
First principles study of O defects in CdSe
|
T-Thienprasert, J.
|
|
2012
|
407 |
15 |
p. 2841-2845
5 p.
|
artikel
|
| 23 |
First-principles study of the magnetic properties of nitrogen-doped alkaline earth metal oxides
|
Seike, Masayoshi
|
|
2012
|
407 |
15 |
p. 2875-2878
4 p.
|
artikel
|
| 24 |
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2
|
Oh, Young Jun
|
|
2012
|
407 |
15 |
p. 2989-2992
4 p.
|
artikel
|
| 25 |
Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN
|
Zainal, N.
|
|
2012
|
407 |
15 |
p. 2964-2966
3 p.
|
artikel
|
| 26 |
Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity
|
Woo, Sungho
|
|
2012
|
407 |
15 |
p. 3059-3062
4 p.
|
artikel
|
| 27 |
Hydrogen interaction with GaN metal–insulator–semiconductor diodes
|
Irokawa, Y.
|
|
2012
|
407 |
15 |
p. 2957-2959
3 p.
|
artikel
|
| 28 |
Identification of a metastable state of the VZnH2 defect in ZnO
|
Bastin, D.
|
|
2012
|
407 |
15 |
p. 2919-2922
4 p.
|
artikel
|
| 29 |
Interaction of dopant atoms with stacking faults in silicon
|
Ohno, Yutaka
|
|
2012
|
407 |
15 |
p. 3006-3008
3 p.
|
artikel
|
| 30 |
Intrinsic defects in GaAs and InGaAs through hybrid functional calculations
|
Komsa, Hannu-Pekka
|
|
2012
|
407 |
15 |
p. 2833-2837
5 p.
|
artikel
|
| 31 |
Investigation of electron energy states in InGaN/GaN multiple quantum wells
|
Asghar, M.
|
|
2012
|
407 |
15 |
p. 2850-2853
4 p.
|
artikel
|
| 32 |
Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si
|
Takakura, Kenichiro
|
|
2012
|
407 |
15 |
p. 2900-2902
3 p.
|
artikel
|
| 33 |
Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
|
Makarenko, L.F.
|
|
2012
|
407 |
15 |
p. 3016-3019
4 p.
|
artikel
|
| 34 |
Laplace deep level transient spectroscopy: Embodiment and evolution
|
Peaker, A.R.
|
|
2012
|
407 |
15 |
p. 3026-3030
5 p.
|
artikel
|
| 35 |
300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation
|
Kissinger, G.
|
|
2012
|
407 |
15 |
p. 2993-2997
5 p.
|
artikel
|
| 36 |
Motion of positively charged muonium in ZnO
|
Baker, B.B.
|
|
2012
|
407 |
15 |
p. 2864-2866
3 p.
|
artikel
|
| 37 |
Muonium dynamics in transparent conducting oxides
|
Celebi, Y.G.
|
|
2012
|
407 |
15 |
p. 2879-2882
4 p.
|
artikel
|
| 38 |
Muonium transitions in Ge-rich SiGe alloys
|
Mengyan, P.W.
|
|
2012
|
407 |
15 |
p. 2829-2832
4 p.
|
artikel
|
| 39 |
Nanoscale order in ZnS:(Cd, O)
|
Díaz Albarrán, S.F.
|
|
2012
|
407 |
15 |
p. 2846-2849
4 p.
|
artikel
|
| 40 |
On the effects of NBTI degradation in p-MOSFET devices
|
Hussin, H.
|
|
2012
|
407 |
15 |
p. 3031-3033
3 p.
|
artikel
|
| 41 |
On the impact of stress on intrinsic defect formation during single crystal silicon growth
|
Vanhellemont, Jan
|
|
2012
|
407 |
15 |
p. 3009-3012
4 p.
|
artikel
|
| 42 |
Organizing committees and sponsors
|
|
|
2012
|
407 |
15 |
p. v-vi
nvt p.
|
artikel
|
| 43 |
Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method
|
Yonenaga, Ichiro
|
|
2012
|
407 |
15 |
p. 2932-2934
3 p.
|
artikel
|
| 44 |
Phase diagrams of polar surface reconstructions of zinc oxide
|
Gluba, M.A.
|
|
2012
|
407 |
15 |
p. 2871-2874
4 p.
|
artikel
|
| 45 |
Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods
|
Meduňa, M.
|
|
2012
|
407 |
15 |
p. 3002-3005
4 p.
|
artikel
|
| 46 |
Preface
|
Evans-Freeman, Jan
|
|
2012
|
407 |
15 |
p. xi-
1 p.
|
artikel
|
| 47 |
Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS-26)
|
Evans-Freeman, Jan
|
|
2012
|
407 |
15 |
p. iii-
1 p.
|
artikel
|
| 48 |
Raman investigation of ro-vibrational modes of interstitial H2 in Si
|
Koch, S.G.
|
|
2012
|
407 |
15 |
p. 2978-2980
3 p.
|
artikel
|
| 49 |
Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures
|
Ohno, Yutaka
|
|
2012
|
407 |
15 |
p. 2886-2888
3 p.
|
artikel
|
| 50 |
Reconfigurations and diffusion of trivacancy in silicon
|
Markevich, V.P.
|
|
2012
|
407 |
15 |
p. 2974-2977
4 p.
|
artikel
|
| 51 |
Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces
|
Binder, Jan Felix
|
|
2012
|
407 |
15 |
p. 2939-2942
4 p.
|
artikel
|
| 52 |
Stabilization of organic thin film transistors by ion implantation
|
Fraboni, B.
|
|
2012
|
407 |
15 |
p. 3047-3051
5 p.
|
artikel
|
| 53 |
Structural analysis of the phase separation in magnetic semiconductor (Zn, Cr)Te
|
Kobayashi, Hiroaki
|
|
2012
|
407 |
15 |
p. 2947-2949
3 p.
|
artikel
|
| 54 |
Structural and local electrical properties of AlInN/AlN/GaN heterostructures
|
Minj, A.
|
|
2012
|
407 |
15 |
p. 2838-2840
3 p.
|
artikel
|
| 55 |
Structural characterizations of sol–gel synthesized TiO2 and Ce/TiO2 nanostructures
|
Niltharach, A.
|
|
2012
|
407 |
15 |
p. 2915-2918
4 p.
|
artikel
|
| 56 |
Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
|
Asghar, M.
|
|
2012
|
407 |
15 |
p. 3038-3040
3 p.
|
artikel
|
| 57 |
Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes
|
Gaubas, E.
|
|
2012
|
407 |
15 |
p. 2998-3001
4 p.
|
artikel
|
| 58 |
Symmetry and structure of N–O shallow donor complexes in silicon
|
Alt, H.Ch.
|
|
2012
|
407 |
15 |
p. 2985-2988
4 p.
|
artikel
|
| 59 |
The CuPL defect and the Cus1Cui3 complex
|
Estreicher, S.K.
|
|
2012
|
407 |
15 |
p. 2967-2969
3 p.
|
artikel
|
| 60 |
The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitrides
|
Ruck, B.J.
|
|
2012
|
407 |
15 |
p. 2954-2956
3 p.
|
artikel
|
| 61 |
The interface structure of high performance ZnO Schottky diodes
|
Mayes, Edwin L.H.
|
|
2012
|
407 |
15 |
p. 2867-2870
4 p.
|
artikel
|
| 62 |
The manuscript for these proceedings were received by the Publisher: begining of July 2011
|
|
|
2012
|
407 |
15 |
p. iv-
1 p.
|
artikel
|
| 63 |
Theoretical study of band gap in CuAlO2: Pressure dependence and self-interaction correction
|
Nakanishi, Akitaka
|
|
2012
|
407 |
15 |
p. 2861-2863
3 p.
|
artikel
|
| 64 |
Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈111〉
|
Liang, J.H.
|
|
2012
|
407 |
15 |
p. 3020-3025
6 p.
|
artikel
|
| 65 |
The study of below and above band-edge imperfection states in In2S3 solar energy materials
|
Ho, Ching-Hwa
|
|
2012
|
407 |
15 |
p. 3052-3055
4 p.
|
artikel
|
| 66 |
The surface blistering kinetics and the H-platelet evolution in H-implanted germanium
|
Yang, Fan
|
|
2012
|
407 |
15 |
p. 2943-2946
4 p.
|
artikel
|
| 67 |
Three carbon pairs in Si
|
Docaj, A.
|
|
2012
|
407 |
15 |
p. 2981-2984
4 p.
|
artikel
|
| 68 |
UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2
|
Mochizuki, Shosuke
|
|
2012
|
407 |
15 |
p. 2889-2894
6 p.
|
artikel
|
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