| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates
|
Pau, J.L
|
|
2002
|
93 |
1-3 |
p. 159-162
4 p.
|
artikel
|
| 2 |
AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)
|
Sánchez, A.M
|
|
2002
|
93 |
1-3 |
p. 181-184
4 p.
|
artikel
|
| 3 |
Analysis of the nucleation of GaN layers on (0001) sapphire
|
Degave, F.
|
|
2002
|
93 |
1-3 |
p. 177-180
4 p.
|
artikel
|
| 4 |
Author Index
|
|
|
2002
|
93 |
1-3 |
p. 239-240
2 p.
|
artikel
|
| 5 |
Brillouin characterization of the acousticwaves phase-velocity in Al x Ga1−x N epilayers
|
Rubio-Zuazo, J
|
|
2002
|
93 |
1-3 |
p. 168-171
4 p.
|
artikel
|
| 6 |
Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)
|
Glaser, E.R
|
|
2002
|
93 |
1-3 |
p. 39-48
10 p.
|
artikel
|
| 7 |
Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures
|
Jiménez, A
|
|
2002
|
93 |
1-3 |
p. 64-67
4 p.
|
artikel
|
| 8 |
Current transport mechanism and I–V characteristics of titanium and indium contacts to p-type GaN
|
Šantić, B
|
|
2002
|
93 |
1-3 |
p. 202-206
5 p.
|
artikel
|
| 9 |
CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off
|
Kneissl, Michael
|
|
2002
|
93 |
1-3 |
p. 68-72
5 p.
|
artikel
|
| 10 |
Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure
|
Chen, Chii-Chang
|
|
2002
|
93 |
1-3 |
p. 28-30
3 p.
|
artikel
|
| 11 |
Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas
|
Jeong, C.H.
|
|
2002
|
93 |
1-3 |
p. 60-63
4 p.
|
artikel
|
| 12 |
Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions
|
Krtschil, A
|
|
2002
|
93 |
1-3 |
p. 85-89
5 p.
|
artikel
|
| 13 |
Electron traps created in n-type GaN during 25 keV hydrogen implantation
|
Auret, F.D
|
|
2002
|
93 |
1-3 |
p. 6-9
4 p.
|
artikel
|
| 14 |
First AlGaN/GaN MOSFET with photoanodic gate dielectric
|
Mistele, D
|
|
2002
|
93 |
1-3 |
p. 107-111
5 p.
|
artikel
|
| 15 |
GaN-based optoelectronics on silicon substrates
|
Krost, Alois
|
|
2002
|
93 |
1-3 |
p. 77-84
8 p.
|
artikel
|
| 16 |
GaN microcavities formed by laser lift-off and plasma etching
|
Martin, R.W.
|
|
2002
|
93 |
1-3 |
p. 98-101
4 p.
|
artikel
|
| 17 |
Group III-nitride-based gas sensors for combustion monitoring
|
Schalwig, J
|
|
2002
|
93 |
1-3 |
p. 207-214
8 p.
|
artikel
|
| 18 |
Growth and characterization of high-quality 10-period AlGaN/GaN Bragg reflectors grown by molecular beam epitaxy
|
Fernández, S
|
|
2002
|
93 |
1-3 |
p. 31-34
4 p.
|
artikel
|
| 19 |
Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy
|
Ristic, J
|
|
2002
|
93 |
1-3 |
p. 172-176
5 p.
|
artikel
|
| 20 |
Growth of GaN on Si(100) substrates using BP as a buffer layer—selective epitaxial growth
|
Nishimura, Suzuka
|
|
2002
|
93 |
1-3 |
p. 135-138
4 p.
|
artikel
|
| 21 |
Influence of high Mg doping on the microstructural and optoelectronic properties of GaN
|
Vennéguès, P
|
|
2002
|
93 |
1-3 |
p. 224-228
5 p.
|
artikel
|
| 22 |
Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers
|
Korona, K.P
|
|
2002
|
93 |
1-3 |
p. 73-76
4 p.
|
artikel
|
| 23 |
In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
|
O'Donnell, K.P
|
|
2002
|
93 |
1-3 |
p. 150-153
4 p.
|
artikel
|
| 24 |
In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology
|
Nitta, Shugo
|
|
2002
|
93 |
1-3 |
p. 139-142
4 p.
|
artikel
|
| 25 |
Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques
|
Visconti, P
|
|
2002
|
93 |
1-3 |
p. 229-233
5 p.
|
artikel
|
| 26 |
Investigation of GaN quantum dot stacking in multilayers with X-ray grazing incidence techniques
|
Chamard, V
|
|
2002
|
93 |
1-3 |
p. 24-27
4 p.
|
artikel
|
| 27 |
Investigation on growth modes of GaN layers grown by LIRE
|
Henn, G
|
|
2002
|
93 |
1-3 |
p. 49-54
6 p.
|
artikel
|
| 28 |
Investigations of phonon sidebands in InGaN/GaN multi-quantum well luminescence
|
Pecharromán-Gallego, R
|
|
2002
|
93 |
1-3 |
p. 94-97
4 p.
|
artikel
|
| 29 |
Ion beam synthesis of GaN precipitates in GaAs
|
Amine, S
|
|
2002
|
93 |
1-3 |
p. 10-14
5 p.
|
artikel
|
| 30 |
Localization effects in InGaAsN multi-quantum well structures
|
Hoffmann, A
|
|
2002
|
93 |
1-3 |
p. 55-59
5 p.
|
artikel
|
| 31 |
Low-dislocation-density Al x Ga1−x N single crystals grown on grooved substrates
|
Sano, Shigekazu
|
|
2002
|
93 |
1-3 |
p. 197-201
5 p.
|
artikel
|
| 32 |
Morphological study of GaN layers grown on porous silicon
|
Missaoui, A
|
|
2002
|
93 |
1-3 |
p. 102-106
5 p.
|
artikel
|
| 33 |
Nanotechnology for SAW devices on AlN epilayers
|
Palacios, T.
|
|
2002
|
93 |
1-3 |
p. 154-158
5 p.
|
artikel
|
| 34 |
Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)
|
Neuberger, Ralph
|
|
2002
|
93 |
1-3 |
p. 143-146
4 p.
|
artikel
|
| 35 |
Optical characterization of III-nitrides
|
Monemar, B
|
|
2002
|
93 |
1-3 |
p. 112-122
11 p.
|
artikel
|
| 36 |
Photoluminescence excitation spectroscopy of InGaN epilayers
|
White, M.E
|
|
2002
|
93 |
1-3 |
p. 147-149
3 p.
|
artikel
|
| 37 |
Planar force-constant method for lattice dynamics of cubic InN
|
Alves, H.W.Leite
|
|
2002
|
93 |
1-3 |
p. 90-93
4 p.
|
artikel
|
| 38 |
Plasma-assisted MBE growth of group-III nitrides: from basics to device applications
|
Sánchez-Garcı́a, M.A
|
|
2002
|
93 |
1-3 |
p. 189-196
8 p.
|
artikel
|
| 39 |
Preface
|
|
|
2002
|
93 |
1-3 |
p. 1-
1 p.
|
artikel
|
| 40 |
Preparation of large GaN substrates
|
Motoki, Kensaku
|
|
2002
|
93 |
1-3 |
p. 123-130
8 p.
|
artikel
|
| 41 |
Quantitative measurement of In fluctuation inside MOCVD InGaN QWs
|
Ruterana, P
|
|
2002
|
93 |
1-3 |
p. 185-188
4 p.
|
artikel
|
| 42 |
Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates
|
Benyoucef, M
|
|
2002
|
93 |
1-3 |
p. 15-18
4 p.
|
artikel
|
| 43 |
Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs
|
Xia, R
|
|
2002
|
93 |
1-3 |
p. 234-238
5 p.
|
artikel
|
| 44 |
Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence
|
Bertram, F
|
|
2002
|
93 |
1-3 |
p. 19-23
5 p.
|
artikel
|
| 45 |
Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers
|
Pereira, S
|
|
2002
|
93 |
1-3 |
p. 163-167
5 p.
|
artikel
|
| 46 |
Strong blue emission from GaN isoelectronically doped with arsenic
|
Foxon, C.T
|
|
2002
|
93 |
1-3 |
p. 35-38
4 p.
|
artikel
|
| 47 |
Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy
|
Naranjo, F.B
|
|
2002
|
93 |
1-3 |
p. 131-134
4 p.
|
artikel
|
| 48 |
Study of the linear electro-optic effect in α-GaN by electroreflectance
|
Shokhovets, S
|
|
2002
|
93 |
1-3 |
p. 215-218
4 p.
|
artikel
|
| 49 |
Subject Index
|
|
|
2002
|
93 |
1-3 |
p. 241-245
5 p.
|
artikel
|
| 50 |
Synthesis and characterization of GaN using gas–solid reactions
|
Di Lello, B.C
|
|
2002
|
93 |
1-3 |
p. 219-223
5 p.
|
artikel
|
| 51 |
Theoretical study of the Al x Ga1−x N alloys
|
de Paiva, R
|
|
2002
|
93 |
1-3 |
p. 2-5
4 p.
|
artikel
|
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