| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption coefficient and exciton oscillator strengths in InGaAs/InP multi-quantum wells
|
Arena, C.
|
|
1993
|
21 |
2-3 |
p. 189-193
5 p.
|
artikel
|
| 2 |
AlGaInP/GaInAs/GaAs MODFET devices: candidates for optoelectronic integrated circuits
|
Pletschen, W.
|
|
1993
|
21 |
2-3 |
p. 304-306
3 p.
|
artikel
|
| 3 |
Aluminium-free 980 nm laser diodes
|
Pessa, M.
|
|
1993
|
21 |
2-3 |
p. 211-216
6 p.
|
artikel
|
| 4 |
An AlGaAs/GaAs OEIC structure for the integration of LEDs, MESFETs and photodetectors
|
Leipold, D.
|
|
1993
|
21 |
2-3 |
p. 300-303
4 p.
|
artikel
|
| 5 |
A study of PbSe heteroepitaxy on Si(111) for IR optoelectronic applications
|
Nguyen-Van-Dau, F.
|
|
1993
|
21 |
2-3 |
p. 317-320
4 p.
|
artikel
|
| 6 |
Author index of volume 21, issues 2–3
|
|
|
1993
|
21 |
2-3 |
p. 338-339
2 p.
|
artikel
|
| 7 |
Blue diode lasers and visible optoelectronic devices
|
Cavenett, B.C.
|
|
1993
|
21 |
2-3 |
p. 205-210
6 p.
|
artikel
|
| 8 |
Characterization of heterointerfaces and surfaces in InSb on GaAs and in InAs/AlSb quantum wells
|
Wagner, J.
|
|
1993
|
21 |
2-3 |
p. 262-265
4 p.
|
artikel
|
| 9 |
Characterization of the heterostructure between heteroepitaxially grown β-FeSi2 and (111) silicon
|
Pauli, M.
|
|
1993
|
21 |
2-3 |
p. 270-273
4 p.
|
artikel
|
| 10 |
Chemical beam epitaxy and photoluminescence characteristics of InGaAsP/InP BRAQWET modulators
|
Carlin, J.F.
|
|
1993
|
21 |
2-3 |
p. 293-295
3 p.
|
artikel
|
| 11 |
Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane
|
Zahzouh, M.
|
|
1993
|
21 |
2-3 |
p. 165-168
4 p.
|
artikel
|
| 12 |
Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy
|
Stoehr, M.
|
|
1993
|
21 |
2-3 |
p. 257-261
5 p.
|
artikel
|
| 13 |
Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
|
Liu, Q.
|
|
1993
|
21 |
2-3 |
p. 181-184
4 p.
|
artikel
|
| 14 |
ESPRIT MORSE: research for novel metal-organic precursors
|
Scholz, F.
|
|
1993
|
21 |
2-3 |
p. 147-152
6 p.
|
artikel
|
| 15 |
Evaluation of III–V growth technologies for optoelectronic applications
|
Heinecke, Harald
|
|
1993
|
21 |
2-3 |
p. 120-129
10 p.
|
artikel
|
| 16 |
Experimental and theoretical studies of multi-quantum well structures for unipolar avalanche multiplication
|
Toivonen, Mika
|
|
1993
|
21 |
2-3 |
p. 237-240
4 p.
|
artikel
|
| 17 |
Growth and characterization of In0.53Ga0.47As/In x Ga1−xAs strained-layer superlattices
|
Kohl, A.
|
|
1993
|
21 |
2-3 |
p. 244-248
5 p.
|
artikel
|
| 18 |
Growth of InAlGaAs multilayer structures for high power and submilliamp vertical cavity lasers
|
Panzlaff, K.
|
|
1993
|
21 |
2-3 |
p. 228-231
4 p.
|
artikel
|
| 19 |
Improved method for GaAs-(Ga,Al) As epitaxial regrowth
|
Bedel, E.
|
|
1993
|
21 |
2-3 |
p. 157-160
4 p.
|
artikel
|
| 20 |
Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE
|
Marschner, T.
|
|
1993
|
21 |
2-3 |
p. 266-269
4 p.
|
artikel
|
| 21 |
Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells
|
Dreybrodt, J.
|
|
1993
|
21 |
2-3 |
p. 198-200
3 p.
|
artikel
|
| 22 |
Intersubband transitions in InAs/AlSb quantum wells
|
Simon, A.
|
|
1993
|
21 |
2-3 |
p. 201-204
4 p.
|
artikel
|
| 23 |
Investigation of InGaAs/InP interdiffusion by simultaneous transmission electron microscopy and photoluminescence analysis
|
Oshinowo, J.
|
|
1993
|
21 |
2-3 |
p. 277-280
4 p.
|
artikel
|
| 24 |
Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry
|
Finders, J.
|
|
1993
|
21 |
2-3 |
p. 161-164
4 p.
|
artikel
|
| 25 |
Large negative persistent photoconductivity of bulk GaAs1-xPx (x=0.02−0.03) single crystals
|
Słupiński, T.
|
|
1993
|
21 |
2-3 |
p. 325-328
4 p.
|
artikel
|
| 26 |
Lateral thickness modulations in alternate tensile—compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy
|
Ponchet, A.
|
|
1993
|
21 |
2-3 |
p. 241-243
3 p.
|
artikel
|
| 27 |
MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
|
Künzel, H.
|
|
1993
|
21 |
2-3 |
p. 194-197
4 p.
|
artikel
|
| 28 |
MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates
|
Röhr, T.
|
|
1993
|
21 |
2-3 |
p. 153-156
4 p.
|
artikel
|
| 29 |
Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
|
Lutgen, S.
|
|
1993
|
21 |
2-3 |
p. 249-252
4 p.
|
artikel
|
| 30 |
Optical and transport properties in the electro-optical material CdIn2Te4
|
Couturier, G.
|
|
1993
|
21 |
2-3 |
p. 333-337
5 p.
|
artikel
|
| 31 |
Optical characterization of extremely high purity ZnSe grown by metal-organic vapour phase epitaxy using dimethylzinc-triethylamine adduct
|
Cloitre, T.
|
|
1993
|
21 |
2-3 |
p. 169-173
5 p.
|
artikel
|
| 32 |
Optical cross-sections and distribution of Fe2+ and Fe3+ in semi-insulating liquid encapsulated Czochralski grown InP:Fe
|
Seidl, A.
|
|
1993
|
21 |
2-3 |
p. 321-324
4 p.
|
artikel
|
| 33 |
Optical investigation of interdiffusion in CdTe/CdMnTe quantum wells
|
Tönnies, D.
|
|
1993
|
21 |
2-3 |
p. 274-276
3 p.
|
artikel
|
| 34 |
Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy
|
Lambert, B.
|
|
1993
|
21 |
2-3 |
p. 185-188
4 p.
|
artikel
|
| 35 |
Organizers and sponsors
|
|
|
1993
|
21 |
2-3 |
p. xii-
1 p.
|
artikel
|
| 36 |
p-Dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers
|
Ralston, J.D.
|
|
1993
|
21 |
2-3 |
p. 232-236
5 p.
|
artikel
|
| 37 |
Photoluminescence and electroluminescence processes in Si1−x Ge x/Si heterostructures grown by chemical vapor deposition
|
Sturm, J.C.
|
|
1993
|
21 |
2-3 |
p. 307-311
5 p.
|
artikel
|
| 38 |
Preface
|
Hirtz, J.P.
|
|
1993
|
21 |
2-3 |
p. xi-
1 p.
|
artikel
|
| 39 |
Quantum confined stark effect (QCSE) and self-electro-optic effect device (SEED) in II–VI heterostructures
|
Haas, H.
|
|
1993
|
21 |
2-3 |
p. 224-227
4 p.
|
artikel
|
| 40 |
Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
|
Monéger, S.
|
|
1993
|
21 |
2-3 |
p. 177-180
4 p.
|
artikel
|
| 41 |
Second harmonic generation via excitations between valence sub-bands in p-type GaAsAlAs and SiSiGe quantum well structures
|
Wong, K.B.
|
|
1993
|
21 |
2-3 |
p. 296-299
4 p.
|
artikel
|
| 42 |
Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD
|
Thrush, E.J.
|
|
1993
|
21 |
2-3 |
p. 130-146
17 p.
|
artikel
|
| 43 |
Shadow mask MBE for the fabrication of lead chalcogenide buried heterostructure lasers
|
Lambrecht, A.
|
|
1993
|
21 |
2-3 |
p. 217-223
7 p.
|
artikel
|
| 44 |
Simulation of lateral Al recoil atoms and damage defects gradients in a GaAs/GaAlAs quantum well created by masked ion implantation
|
Faye, M.M.
|
|
1993
|
21 |
2-3 |
p. 284-287
4 p.
|
artikel
|
| 45 |
Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53Al x Ga0.47−xAs layers on InP in the wavelength range 280–1900 nm
|
Dinges, H.W.
|
|
1993
|
21 |
2-3 |
p. 174-176
3 p.
|
artikel
|
| 46 |
Stoichiometry of III–V compounds
|
Nishizawa, Jun-ichi
|
|
1993
|
21 |
2-3 |
p. 107-119
13 p.
|
artikel
|
| 47 |
Strained InAs/AlxGa0.48 − xIn0.52As heterostructures: a tunable quantum well materials system for light emission from the near-IR to the mid-IR
|
Tournié, Eric
|
|
1993
|
21 |
2-3 |
p. 288-292
5 p.
|
artikel
|
| 48 |
Strain effects on carrier lifetimes in InGaAs/(Al)GaAs multiple quantum wells
|
Moloney, M.H.
|
|
1993
|
21 |
2-3 |
p. 253-256
4 p.
|
artikel
|
| 49 |
Subject index of volume 21, issues 2–3
|
|
|
1993
|
21 |
2-3 |
p. 340-345
6 p.
|
artikel
|
| 50 |
Synthetic diamond: the optical band at 1.883 eV
|
Nazaré, M.H.
|
|
1993
|
21 |
2-3 |
p. 329-332
4 p.
|
artikel
|
| 51 |
Tunable infrared photoemission sensor on Si using epitaxial ErSi2/Si heterostructures
|
Sagnes, I.
|
|
1993
|
21 |
2-3 |
p. 312-316
5 p.
|
artikel
|
| 52 |
Vacancy controlled interdiffusion in III–V heterostructures
|
Gillin, W.P.
|
|
1993
|
21 |
2-3 |
p. 281-283
3 p.
|
artikel
|
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