Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy
Titel:
Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy
Auteur:
Stoehr, M. Maurin, M. Hamdani, F. Lascaray, J.P. Barbusse, D. Fraisse, B. Fourcade, R. Abraham, P. Monteil, Y.
Verschenen in:
Materials science and engineering. B, Solid-state materials for advanced technology