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                             31 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparative study of EVA with and without thermal history for different lamination process parameters Drabczyk, Kazimierz
2012
177 15 p. 1378-1383
6 p.
artikel
2 Analysis of polymer foil heaters as infrared radiation sources Witek, Krzysztof
2012
177 15 p. 1373-1377
5 p.
artikel
3 Analysis of the thermal behavior of AlGaN/GaN HEMTs Russo, Salvatore
2012
177 15 p. 1343-1351
9 p.
artikel
4 Application of lock-in thermography for failure analysis in integrated circuits using quantitative phase shift analysis Schmidt, Ch.
2012
177 15 p. 1261-1267
7 p.
artikel
5 A promising solution using CVD diamond for efficient cooling of power devices Zhang, Zhongda
2012
177 15 p. 1358-1361
4 p.
artikel
6 Author index 2012
177 15 p. 1385-1390
6 p.
artikel
7 Comparison of ZnO:Al, ITO and carbon nanotube transparent conductive layers in flexible solar cells applications Sibiński, Maciej
2012
177 15 p. 1292-1298
7 p.
artikel
8 Cyclic voltammetry response of an undoped CVD diamond electrodes Fabisiak, K.
2012
177 15 p. 1243-1247
5 p.
artikel
9 Defect detection in wire welded joints using thermography investigations Świątczak, T.
2012
177 15 p. 1239-1242
4 p.
artikel
10 Editorial Board 2012
177 15 p. CO2-
1 p.
artikel
11 Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks Taube, Andrzej
2012
177 15 p. 1281-1285
5 p.
artikel
12 Electrothermal model of choking-coils for the analysis of dc–dc converters Górecki, Krzysztof
2012
177 15 p. 1248-1253
6 p.
artikel
13 Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications Sasso, Grazia
2012
177 15 p. 1233-1238
6 p.
artikel
14 Influence of laminate type on tin whisker growth in tin-rich lead-free solder alloys Skwarek, Agata
2012
177 15 p. 1286-1291
6 p.
artikel
15 Influence of series resistance and cooling conditions on I–V characteristics of SiC merged PiN Schottky diodes Hapka, Aneta
2012
177 15 p. 1310-1313
4 p.
artikel
16 International Conference Microtechnology and Thermal Problems in Electronics June 25th - June 28th 2013, Lodz, Poland 2012
177 15 p. 1384-
1 p.
artikel
17 Investigation of gate edge effect on interface trap density in 3C–SiC MOS capacitors Gutt, T.
2012
177 15 p. 1327-1330
4 p.
artikel
18 Investigation of microstructure and chemical composition of Ni contacts to n-type 4H–SiC Rogowski, Jacek
2012
177 15 p. 1318-1322
5 p.
artikel
19 New packages for disc type power diodes Raj, Ewa
2012
177 15 p. 1304-1309
6 p.
artikel
20 OM4 bend insensitive multi-mode fibers’ usefulness for MCM integration Guzowski, Bartłomiej
2012
177 15 p. 1367-1372
6 p.
artikel
21 Power MOSFET quality and robustness enhancement with a new Q BD characterization performed at probe–die–wafer level Pomès, Emilie
2012
177 15 p. 1362-1366
5 p.
artikel
22 Quartz crystal unit modeling at cryogenic temperatures Balik, F.
2012
177 15 p. 1254-1260
7 p.
artikel
23 Relaxation of stresses in polystyrene–carbon microcomposite resistive layers Łukasik, Andrzej
2012
177 15 p. 1331-1335
5 p.
artikel
24 Subject index 2012
177 15 p. 1391-1413
23 p.
artikel
25 Technology of ZnO nanofibers based devices Stafiniak, A.
2012
177 15 p. 1299-1303
5 p.
artikel
26 The favorable and unfavorable effects of oxide and intermetallic phases in conductive materials using laser micro technologies Pawlak, R.
2012
177 15 p. 1273-1280
8 p.
artikel
27 The influence of oxygen ambient annealing conditions on the quality of Al/SiO2/n-type 4H-SiC MOS structure Król, Krystian
2012
177 15 p. 1314-1317
4 p.
artikel
28 The influence of working gas on CVD diamond quality Fabisiak, K.
2012
177 15 p. 1352-1357
6 p.
artikel
29 Thermal characterization of screen printed conductive pastes for RFID antennas Janeczek, Kamil
2012
177 15 p. 1336-1342
7 p.
artikel
30 Thermal properties of high-power diode lasers investigated by means of high resolution thermography Kozłowska, Anna
2012
177 15 p. 1268-1272
5 p.
artikel
31 The role of deep level traps in barrier height of 4H–SiC Schottky diode Zaremba, G.
2012
177 15 p. 1323-1326
4 p.
artikel
                             31 gevonden resultaten
 
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