| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A model for low pressure chemical vapor deposition in a hot-wall tubular reactor
|
Houf, W.G.
|
|
1993
|
17 |
1-3 |
p. 163-171
9 p.
|
artikel
|
| 2 |
A new metal-organic chemical vapor deposition process for selective copper metallization
|
Norman, J.A.T.
|
|
1993
|
17 |
1-3 |
p. 87-92
6 p.
|
artikel
|
| 3 |
A new organoindium precursor for electronic materials
|
Soulière, V.
|
|
1993
|
17 |
1-3 |
p. 34-40
7 p.
|
artikel
|
| 4 |
Author index of volume 17
|
|
|
1993
|
17 |
1-3 |
p. 202-
1 p.
|
artikel
|
| 5 |
Chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapor deposition with silane precursor
|
Jursich, G.
|
|
1993
|
17 |
1-3 |
p. 77-81
5 p.
|
artikel
|
| 6 |
Chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth
|
Jansson, Ulf
|
|
1993
|
17 |
1-3 |
p. 131-136
6 p.
|
artikel
|
| 7 |
Chemical vapour deposition precursors for metal silicides
|
Madar, R.
|
|
1993
|
17 |
1-3 |
p. 118-125
8 p.
|
artikel
|
| 8 |
Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation
|
Virzi, A.
|
|
1993
|
17 |
1-3 |
p. 196-201
6 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
1993
|
17 |
1-3 |
p. iii-
1 p.
|
artikel
|
| 10 |
Etching of copper and copper oxide at high rates via generation of volatile copper species
|
Farkas, J.
|
|
1993
|
17 |
1-3 |
p. 93-96
4 p.
|
artikel
|
| 11 |
Growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane
|
Levy, Roland A.
|
|
1993
|
17 |
1-3 |
p. 172-180
9 p.
|
artikel
|
| 12 |
Growth kinetics during metal-organic chemical vapour deposition of ZnTe
|
Dumont, H.
|
|
1993
|
17 |
1-3 |
p. 41-46
6 p.
|
artikel
|
| 13 |
Heterogeneous systems based on precious metal powders and polymers
|
Kužel, R.
|
|
1993
|
17 |
1-3 |
p. 190-195
6 p.
|
artikel
|
| 14 |
Improved GaAs/Ga 1−x Al x As chemical beam epitaxy using triisopropylgallium
|
Lane, P.A.
|
|
1993
|
17 |
1-3 |
p. 15-20
6 p.
|
artikel
|
| 15 |
In-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films
|
Tachibana, Kunihide
|
|
1993
|
17 |
1-3 |
p. 68-71
4 p.
|
artikel
|
| 16 |
Metal-organic research in semiconductor epitaxy: ESPRIT II—MORSE project overview
|
Hirtz, J.P.
|
|
1993
|
17 |
1-3 |
p. 9-14
6 p.
|
artikel
|
| 17 |
Microstructure and cracking in pure and substituted YBa2Cu3O7−δ
|
Diko, P.
|
|
1993
|
17 |
1-3 |
p. 152-156
5 p.
|
artikel
|
| 18 |
Mineral precursor for chemical vapor deposition of Rh metallic films
|
Doppelt, Pascal
|
|
1993
|
17 |
1-3 |
p. 143-146
4 p.
|
artikel
|
| 19 |
Molecular simulation: a microscopic approach to study the growth of native silicon oxide
|
Pham, V.V.
|
|
1993
|
17 |
1-3 |
p. 181-184
4 p.
|
artikel
|
| 20 |
New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III–V semiconductors: in-situ formation of AsH functionality by β elimination of specific metal-organic arsenic compounds
|
Gimmnich, P.
|
|
1993
|
17 |
1-3 |
p. 21-24
4 p.
|
artikel
|
| 21 |
New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy
|
Dorn, R.
|
|
1993
|
17 |
1-3 |
p. 25-28
4 p.
|
artikel
|
| 22 |
New metal-organic precursors for growth of GaAs and Al x Ga 1−x As by chemical beam epitaxy
|
Jones, A.C.
|
|
1993
|
17 |
1-3 |
p. 1-8
8 p.
|
artikel
|
| 23 |
On the growth of epitaxial ultrathin films of α-Sn on CdTe(110)
|
Møller, Preben J.
|
|
1993
|
17 |
1-3 |
p. 112-117
6 p.
|
artikel
|
| 24 |
Optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and P o 2 −T conditions
|
Gorbenko, O.Yu.
|
|
1993
|
17 |
1-3 |
p. 157-162
6 p.
|
artikel
|
| 25 |
Organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition
|
Bali, K.
|
|
1993
|
17 |
1-3 |
p. 101-103
3 p.
|
artikel
|
| 26 |
Organizers and sponsors
|
|
|
1993
|
17 |
1-3 |
p. viii-
1 p.
|
artikel
|
| 27 |
Organometallic compounds: the chemist's contribution to new electronic materials
|
Blessmann, D.
|
|
1993
|
17 |
1-3 |
p. 104-107
4 p.
|
artikel
|
| 28 |
Preface
|
Pauleau, Y.
|
|
1993
|
17 |
1-3 |
p. vii-
1 p.
|
artikel
|
| 29 |
Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using β-ketoiminato complexes
|
Gerfin, Tobias
|
|
1993
|
17 |
1-3 |
p. 97-100
4 p.
|
artikel
|
| 30 |
Properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation
|
Koynov, S.
|
|
1993
|
17 |
1-3 |
p. 82-86
5 p.
|
artikel
|
| 31 |
Reaction diffusion in Ta/GaAs contacts
|
Han, Q.
|
|
1993
|
17 |
1-3 |
p. 147-151
5 p.
|
artikel
|
| 32 |
Selective epitaxial growth of In 1−x Al x As by metal-organic vapour-phase epitaxy
|
Shimoyama, K.
|
|
1993
|
17 |
1-3 |
p. 29-33
5 p.
|
artikel
|
| 33 |
Silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties
|
Scheid, E.
|
|
1993
|
17 |
1-3 |
p. 72-76
5 p.
|
artikel
|
| 34 |
Silicon nitride elaborated by low pressure chemical vapour deposition from Si2H6 and NH3 at low temperature
|
Scheid, E.
|
|
1993
|
17 |
1-3 |
p. 185-189
5 p.
|
artikel
|
| 35 |
Studies on the nucleation and growth of chemical-vapor-deposited W on TiN substrates
|
Kim, Eui Song
|
|
1993
|
17 |
1-3 |
p. 137-142
6 p.
|
artikel
|
| 36 |
Subject index of volume 17
|
|
|
1993
|
17 |
1-3 |
p. 203-206
4 p.
|
artikel
|
| 37 |
Synthesis of chromium silicide-silicon carbide composite powders
|
Luo, Ping
|
|
1993
|
17 |
1-3 |
p. 126-130
5 p.
|
artikel
|
| 38 |
The selective epitaxial growth of silicon
|
Goulding, M.R.
|
|
1993
|
17 |
1-3 |
p. 47-67
21 p.
|
artikel
|
| 39 |
Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors
|
Spee, C.I.M.A.
|
|
1993
|
17 |
1-3 |
p. 108-111
4 p.
|
artikel
|
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