| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced apparatus for combinatorial synthesis of buried II–VI nanocrystals by ion implantation
|
Großhans, I.
|
|
2003
|
101 |
1-3 |
p. 212-215
4 p.
|
artikel
|
| 2 |
Anti-Stokes photoluminescence and structural defects in CdSe/ZnSe nanostructures
|
Valakh, M.Ya.
|
|
2003
|
101 |
1-3 |
p. 255-258
4 p.
|
artikel
|
| 3 |
Author Index
|
|
|
2003
|
101 |
1-3 |
p. 345-346
2 p.
|
artikel
|
| 4 |
Calculated PL lifetimes of Si nanowires: the effect of a dispersion in the crystallographic orientations
|
Zianni, X.
|
|
2003
|
101 |
1-3 |
p. 242-245
4 p.
|
artikel
|
| 5 |
Carrier transport and related phenomena in nanosize periodic silicon/insulator structures
|
Berashevich, J.A.
|
|
2003
|
101 |
1-3 |
p. 111-118
8 p.
|
artikel
|
| 6 |
Characterisation of implanted surface layers in ion-thinned semiconductors by transmission electron microscopy
|
Jacob, D.
|
|
2003
|
101 |
1-3 |
p. 133-136
4 p.
|
artikel
|
| 7 |
Characterization and properties of a modified Si solar cell emitter by a porous Si layer
|
Swiatek, Z.
|
|
2003
|
101 |
1-3 |
p. 291-296
6 p.
|
artikel
|
| 8 |
Charging effects in silicon nanocrystals embedded in SiO2 films
|
Kouvatsos, D.N.
|
|
2003
|
101 |
1-3 |
p. 270-274
5 p.
|
artikel
|
| 9 |
Combined growth of Si nanoparticles and crystallized silicon layers at 200°C by reactive magnetron sputtering
|
Leconte, Y.
|
|
2003
|
101 |
1-3 |
p. 194-198
5 p.
|
artikel
|
| 10 |
Composition of self assembled Ge hut clusters
|
Denker, U.
|
|
2003
|
101 |
1-3 |
p. 89-94
6 p.
|
artikel
|
| 11 |
Compressively strained Ge channels on relaxed SiGe buffer layers
|
Bollani, M.
|
|
2003
|
101 |
1-3 |
p. 102-105
4 p.
|
artikel
|
| 12 |
Controlling the quantum dot nucleation site
|
Motta, Nunzio
|
|
2003
|
101 |
1-3 |
p. 77-88
12 p.
|
artikel
|
| 13 |
Digital devices based on tunnel-resonant transport of charge carriers in periodic Si/CaF2 nanostructures
|
Berashevich, J.A.
|
|
2003
|
101 |
1-3 |
p. 300-304
5 p.
|
artikel
|
| 14 |
Effect of As2 physisorbed molecules on the photoemission current during growth: simulation of GaAs and GaAlAs deposition
|
Fazouan, N.
|
|
2003
|
101 |
1-3 |
p. 128-132
5 p.
|
artikel
|
| 15 |
Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers
|
Carrada, M.
|
|
2003
|
101 |
1-3 |
p. 204-207
4 p.
|
artikel
|
| 16 |
Effect of Sb on Si/Si and Ge/Si growth process
|
Portavoce, A.
|
|
2003
|
101 |
1-3 |
p. 181-185
5 p.
|
artikel
|
| 17 |
Effect of spacer layer thickness on the optical properties of stacked InAs/InAlAs quantum wires grown on InP (001)
|
Salem, B.
|
|
2003
|
101 |
1-3 |
p. 259-261
3 p.
|
artikel
|
| 18 |
Effects of hydrogenation on photoluminescence of Si nanoparticles formed by pulsed laser ablation
|
Inada, M.
|
|
2003
|
101 |
1-3 |
p. 283-285
3 p.
|
artikel
|
| 19 |
Electrical barrier properties of meso-porous silicon
|
Remaki, B.
|
|
2003
|
101 |
1-3 |
p. 313-317
5 p.
|
artikel
|
| 20 |
Electronic structure of stressed CrSi2
|
Krivosheeva, A.V.
|
|
2003
|
101 |
1-3 |
p. 309-312
4 p.
|
artikel
|
| 21 |
Evolution with annealing treatments of the size of silicon nanocrystallites embedded in a SiN x matrix and correlation with optical properties
|
Molinari, M.
|
|
2003
|
101 |
1-3 |
p. 186-189
4 p.
|
artikel
|
| 22 |
Excitonic dynamics in CdTe/ZnTe quantum dots
|
Viale, Y.
|
|
2003
|
101 |
1-3 |
p. 55-59
5 p.
|
artikel
|
| 23 |
Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation
|
Ronda, A.
|
|
2003
|
101 |
1-3 |
p. 95-101
7 p.
|
artikel
|
| 24 |
Formation of nanostructures on surface of SiC by laser radiation
|
Medvid’, A.
|
|
2003
|
101 |
1-3 |
p. 155-158
4 p.
|
artikel
|
| 25 |
Fullerene freejets-based synthesis of silicon carbide: heteroepitaxial growth on Si(111) at low temperatures
|
Aversa, L.
|
|
2003
|
101 |
1-3 |
p. 169-173
5 p.
|
artikel
|
| 26 |
Fundamental properties of ferromagnetic micro- and nanostructured semiconductors for optoelectronic application
|
Sohatsky, V.P.
|
|
2003
|
101 |
1-3 |
p. 246-248
3 p.
|
artikel
|
| 27 |
Ge instabilities near interfaces in Si/SiGe/Si heterostructures
|
Schmeißer, D.
|
|
2003
|
101 |
1-3 |
p. 208-211
4 p.
|
artikel
|
| 28 |
Glancing angle EXAFS of encapsulated self-assembled InAs/InP quantum wires and InAs/GaAs quantum dots
|
Renevier, H.
|
|
2003
|
101 |
1-3 |
p. 174-180
7 p.
|
artikel
|
| 29 |
Hole trapping in self-assembled SiGe quantum nanostructures
|
Volpi, F.
|
|
2003
|
101 |
1-3 |
p. 338-344
7 p.
|
artikel
|
| 30 |
Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2
|
Ioannou-Sougleridis, V.
|
|
2003
|
101 |
1-3 |
p. 324-328
5 p.
|
artikel
|
| 31 |
Influence of capping on strain, composition and shape of SiGe islands
|
Hesse, A.
|
|
2003
|
101 |
1-3 |
p. 71-76
6 p.
|
artikel
|
| 32 |
Influence of carrier and doping gases on the chemical vapor deposition of silicon quantum dots
|
Mazen, F.
|
|
2003
|
101 |
1-3 |
p. 164-168
5 p.
|
artikel
|
| 33 |
Inside front cover
|
|
|
2003
|
101 |
1-3 |
p. IFC-
1 p.
|
artikel
|
| 34 |
Investigation of dielectric cap induced intermixing of In x Ga1−x As y P1−y/InP quantum well laser structures by photoreflectance and photoluminescence
|
Kudrawiec, R.
|
|
2003
|
101 |
1-3 |
p. 137-141
5 p.
|
artikel
|
| 35 |
Investigation of Si nanocluster formation in sputter-deposited silicon sub-oxides for nanocluster memory structures
|
Schmidt, J.U
|
|
2003
|
101 |
1-3 |
p. 28-33
6 p.
|
artikel
|
| 36 |
ITO spin-coated porous silicon structures
|
Daoudi, K
|
|
2003
|
101 |
1-3 |
p. 262-265
4 p.
|
artikel
|
| 37 |
Laser-induced treatment of silicon in air and formation of Si/SiO x photoluminescent nanostructured layers
|
Kabashin, A.V.
|
|
2003
|
101 |
1-3 |
p. 60-64
5 p.
|
artikel
|
| 38 |
Laser wavelength and partial pressure effects on the formation of nanocrystalline Si
|
Kim, Jong Hoon
|
|
2003
|
101 |
1-3 |
p. 146-149
4 p.
|
artikel
|
| 39 |
Minority carrier blockade in MIND model solar cells
|
Ley, M.
|
|
2003
|
101 |
1-3 |
p. 286-290
5 p.
|
artikel
|
| 40 |
MnS clusters in natural zeolites
|
Iacomi, Felicia
|
|
2003
|
101 |
1-3 |
p. 275-278
4 p.
|
artikel
|
| 41 |
Morphology, structure and optical properties of sol–gel ITO thin films
|
Stoica, T.F.
|
|
2003
|
101 |
1-3 |
p. 222-226
5 p.
|
artikel
|
| 42 |
MOS memory structures by very-low-energy-implanted Si in thin SiO2
|
Dimitrakis, P.
|
|
2003
|
101 |
1-3 |
p. 14-18
5 p.
|
artikel
|
| 43 |
Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface
|
Müller, T.
|
|
2003
|
101 |
1-3 |
p. 49-54
6 p.
|
artikel
|
| 44 |
NeoSilicon materials and silicon nanodevices
|
Oda, Shunri
|
|
2003
|
101 |
1-3 |
p. 19-23
5 p.
|
artikel
|
| 45 |
Non-constant anodization current effects on spectra of porous silicon LEDs
|
Barillaro, G.
|
|
2003
|
101 |
1-3 |
p. 266-269
4 p.
|
artikel
|
| 46 |
Nucleation of Ge islands on Si mesas with high-index facets
|
Goryll, M.
|
|
2003
|
101 |
1-3 |
p. 9-13
5 p.
|
artikel
|
| 47 |
Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy
|
Umirzakov, B.E.
|
|
2003
|
101 |
1-3 |
p. 124-127
4 p.
|
artikel
|
| 48 |
Optical and compositional characterisation of stain-etched porous silicon subjected to anodic oxidation and thermal treatments
|
Guerrero-Lemus, R.
|
|
2003
|
101 |
1-3 |
p. 249-254
6 p.
|
artikel
|
| 49 |
Optical properties of a microcavity containing silicon nanocrystals
|
Amans, D.
|
|
2003
|
101 |
1-3 |
p. 305-308
4 p.
|
artikel
|
| 50 |
Optical, structural and electrical properties of μc-Si:H films deposited by SiH4+H2
|
Ambrosone, G.
|
|
2003
|
101 |
1-3 |
p. 236-241
6 p.
|
artikel
|
| 51 |
Oscillator strengths and excitation energies of Ge and Si nanocrystals from ab initio supercell calculations
|
Weissker, H.-Ch.
|
|
2003
|
101 |
1-3 |
p. 39-42
4 p.
|
artikel
|
| 52 |
Oxygen role on the optoelectronic properties of silicon nanodots
|
Luppi, Marcello
|
|
2003
|
101 |
1-3 |
p. 34-38
5 p.
|
artikel
|
| 53 |
Percolation effect in the vibrational spectra of mixed crystals with highly contrasted bond stiffness
|
Pagès, O.
|
|
2003
|
101 |
1-3 |
p. 150-154
5 p.
|
artikel
|
| 54 |
Photoreflectance study of changes in the QW profile of 1.55-micrometer laser structure induced by SiO2 cap layers
|
Kudrawiec, R.
|
|
2003
|
101 |
1-3 |
p. 232-235
4 p.
|
artikel
|
| 55 |
Precision placement of heteroepitaxial semiconductor quantum dots
|
Hull, R.
|
|
2003
|
101 |
1-3 |
p. 1-8
8 p.
|
artikel
|
| 56 |
Preface
|
|
|
2003
|
101 |
1-3 |
p. xi-xii
nvt p.
|
artikel
|
| 57 |
Preparation and microstructural characterization of nanosized Mo–TiO2 and Mo–W–O thin films by sputtering: tailoring of composition and porosity by thermal treatment
|
Vomiero, A
|
|
2003
|
101 |
1-3 |
p. 216-221
6 p.
|
artikel
|
| 58 |
Quantum confinement in CdSe-nanocrystallites synthesized by ion implantation
|
Hipp, W.
|
|
2003
|
101 |
1-3 |
p. 318-323
6 p.
|
artikel
|
| 59 |
Quantum effects and single-electron charging effects in nano-scale silicon MOSFETs at room temperature
|
Hiramoto, Toshiro
|
|
2003
|
101 |
1-3 |
p. 24-27
4 p.
|
artikel
|
| 60 |
Reaction and diffusion at interfaces of micro- and nanostructured materials
|
Gas, P
|
|
2003
|
101 |
1-3 |
p. 43-48
6 p.
|
artikel
|
| 61 |
Reduction of surface reflectivity by using double porous silicon layers
|
Lipinski, M.
|
|
2003
|
101 |
1-3 |
p. 297-299
3 p.
|
artikel
|
| 62 |
Selective growth of Ge quantum dots on chemically prepared SiO2/Si(001) surfaces
|
Nguyen, Lam H.
|
|
2003
|
101 |
1-3 |
p. 199-203
5 p.
|
artikel
|
| 63 |
Selforganized formation of crystallographically oriented octahedral cavities during electrochemical pore etching
|
Lölkes, S.
|
|
2003
|
101 |
1-3 |
p. 159-163
5 p.
|
artikel
|
| 64 |
Silicon micromachined sensor for gas detection
|
Moldovan, Carmen
|
|
2003
|
101 |
1-3 |
p. 227-231
5 p.
|
artikel
|
| 65 |
Strain relief mechanisms in Ge/Si(100) islands
|
Capellini, G.
|
|
2003
|
101 |
1-3 |
p. 106-110
5 p.
|
artikel
|
| 66 |
Structural and magnetic properties of MnAs nanoclusters formed by Mn ion implantation in GaAs
|
Serres, A.
|
|
2003
|
101 |
1-3 |
p. 119-123
5 p.
|
artikel
|
| 67 |
Structural and photoluminescence properties of thin alumina films on silicon, fabricated by electrochemistry
|
Kokonou, M.
|
|
2003
|
101 |
1-3 |
p. 65-70
6 p.
|
artikel
|
| 68 |
Subject Index
|
|
|
2003
|
101 |
1-3 |
p. 347-353
7 p.
|
artikel
|
| 69 |
Successful shape-preservation of Ge-clusters during Si-coverage at low temperature
|
Müller, E.
|
|
2003
|
101 |
1-3 |
p. 142-145
4 p.
|
artikel
|
| 70 |
Temperature dependence of the transient and AC electrical conductivity of porous silicon thin films
|
Theodoropoulou, M.
|
|
2003
|
101 |
1-3 |
p. 334-337
4 p.
|
artikel
|
| 71 |
The effect of Sb on the oxidation of Ge quantum dots
|
Lim, Y.S.
|
|
2003
|
101 |
1-3 |
p. 190-193
4 p.
|
artikel
|
| 72 |
Thermopower of composite fermions in the fractional quantum Hall effect regime
|
Karavolas, V.C.
|
|
2003
|
101 |
1-3 |
p. 329-333
5 p.
|
artikel
|
| 73 |
The room-temperature photoluminescence of Si nanocrystals in a-Si matrix composite system produced by the irradiation of silicon with ions of high and medium masses
|
Tetelbaum, D.I.
|
|
2003
|
101 |
1-3 |
p. 279-282
4 p.
|
artikel
|
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