MOS memory structures by very-low-energy-implanted Si in thin SiO2
Titel:
MOS memory structures by very-low-energy-implanted Si in thin SiO2
Auteur:
Dimitrakis, P. Kapetanakis, E. Normand, P. Skarlatos, D. Tsoukalas, D. Beltsios, K. Claverie, A. Benassayag, G. Bonafos, C. Chassaing, D. Carrada, M. Soncini, V.
Verschenen in:
Materials science and engineering. B, Solid-state materials for advanced technology