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                             91 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerator mass spectrometry: A versatile tool for research Kutschera, Walter
 1990
 50 1-4 p. 252-261
10 p.
 artikel
2 Accelerator mass spectrometry with fully stripped 26Al, 63Cl, 41Ca and (su59)Ni ions Faestermann, H.
 1990
 50 1-4 p. 275-279
5 p.
 artikel
3 Accelerator mass spectrometry with time-of-flight measurement Müller, D.
 1990
 50 1-4 p. 271-274
4 p.
 artikel
4 Accuracy of thick-target micro-PIXE analysis Campbell, J.L.
 1990
 50 1-4 p. 189-196
8 p.
 artikel
5 A low-temperature bolometer for particle detection in Rutherford backscattering analysis Woiwod, S.
 1990
 50 1-4 p. 91-94
4 p.
 artikel
6 A 3 MV tandetron facility at KFUPM Al-Juwair, H.A.
 1990
 50 1-4 p. 474-477
4 p.
 artikel
7 Analysis of annealing and ion implantation effects in Ti/TiN contacts on silicon Milosavljević, Momir
 1990
 50 1-4 p. 391-394
4 p.
 artikel
8 Analysis of Cu and O in high-T c superconductors by 7–9 MeV protons Keinonen, J.
 1990
 50 1-4 p. 39-42
4 p.
 artikel
9 An ECR-RFQ ion beam facility for materials research with highly charged slow ions Hofmann, D.
 1990
 50 1-4 p. 478-480
3 p.
 artikel
10 A new AMS beam line at the Erlangen tandem accelerator facility Baumgärtner, M.
 1990
 50 1-4 p. 286-290
5 p.
 artikel
11 A new generation of single-ended Van de Graaff accelerators for ion implantation and ion beam analysis Van Oosterhout, H.A.P.
 1990
 50 1-4 p. 455-459
5 p.
 artikel
12 Angular dependence of the self-ion-sputtering yield of silicon at 30 keV Fröhlich, O.
 1990
 50 1-4 p. 436-438
3 p.
 artikel
13 An RBS, NRA and SEM study of annealing effects on the mustructure of palladium layers Cereda, E.
 1990
 50 1-4 p. 48-51
4 p.
 artikel
14 A PIXE mini-beam setup at the bonn cyclotron for archeometric metal analyses Weber, J.
 1990
 50 1-4 p. 221-225
5 p.
 artikel
15 Applications of accelerator mass spectrometry to electronic materials Anthony, J.M.
 1990
 50 1-4 p. 262-266
5 p.
 artikel
16 Applications of photonuclear reactions Findlay, D.J.S.
 1990
 50 1-4 p. 314-320
7 p.
 artikel
17 Argon irradiation damage at a Cu/Al2O3 interface for different alumina structures El Bouanani, M.
 1990
 50 1-4 p. 431-435
5 p.
 artikel
18 A simple coincidence method of deuterium profiling using the D3He, α)H reaction Wielunski, M.
 1990
 50 1-4 p. 23-26
4 p.
 artikel
19 A standing-wave structure for a synchrotron ring injector Labrie, J.-P.
 1990
 50 1-4 p. 465-469
5 p.
 artikel
20 A synchrotron radiation microprobe for X-ray fluorescence and microtomography at ELETTRA Tuniz, Claudio
 1990
 50 1-4 p. 338-342
5 p.
 artikel
21 Atomic data for accelerator-based X-ray fluorescence spectroscopy Fritzsche, S.
 1990
 50 1-4 p. 353-357
5 p.
 artikel
22 Author index 1990
 50 1-4 p. 481-488
8 p.
 artikel
23 Beryllium bombardment for In0.53Gao0.47As and InP photoconductors with picosecond response times Schaelin, A.
 1990
 50 1-4 p. 379-383
5 p.
 artikel
24 Characterization of optical coatings by Rutherford backscattering spectrometry and elastic recoil detection analysis Pretorius, R.
 1990
 50 1-4 p. 105-108
4 p.
 artikel
25 Charged-particle activation methods for the analysis of carbon and oxygen in high-purity gallium Bakraji, E.H.
 1990
 50 1-4 p. 65-67
3 p.
 artikel
26 Combining PIXE and XRF with gamma-ray transmission to get accurate analysis of archaeological bronzes Respaldiza, M.A.
 1990
 50 1-4 p. 226-230
5 p.
 artikel
27 Conference committees 1990
 50 1-4 p. ix-
1 p.
 artikel
28 Conference photographs 1990
 50 1-4 p. x-xii
nvt p.
 artikel
29 Depth distribution of martensite in xenon-implanted stainless steels Johansen, A.
 1990
 50 1-4 p. 119-126
8 p.
 artikel
30 Depth-profiling of beryllium on graphite with ion beams Reichle, R.
 1990
 50 1-4 p. 68-73
6 p.
 artikel
31 Depth profiling of heavy-ion-mixed TiN films Lieb, K.P.
 1990
 50 1-4 p. 10-18
9 p.
 artikel
32 Design of a magnetic spectrograph for surface, interface and thin-layer analysis Boerma, D.O.
 1990
 50 1-4 p. 291-299
9 p.
 artikel
33 Determination of lattice sites for Eu, Hf and Nd IN LiNbO3 by RBS/channeling experiments Rebouta, L.
 1990
 50 1-4 p. 428-430
3 p.
 artikel
34 Determination of nitrogen in semiconductor materials using the 14N(p, α)11C and 14N(d, n)15O nuclear reactions Köhl, F.
 1990
 50 1-4 p. 19-22
4 p.
 artikel
35 Determination of 18O concentrations in musamples of biological fluids Cohen, David D.
 1990
 50 1-4 p. 43-47
5 p.
 artikel
36 Determination of the Li/Ni ratio in Li x Ni1 − xO thin films by PIXE-PIGE analysis Boni, C.
 1990
 50 1-4 p. 243-246
4 p.
 artikel
37 3D hydrogen profiling by elastic recoil detection analysis in transmission geometry Tirira, J.
 1990
 50 1-4 p. 135-139
5 p.
 artikel
38 Diffusion and corrosion behaviour of tungsten-implanted Aluminium and the Al12W phase Da Silva, R.C.
 1990
 50 1-4 p. 423-427
5 p.
 artikel
39 Diffusion and strain relaxation in Si/Si1−x Ge x/Si structures studied with Rutherford backscattering spectrometry van Ijzendoorn, L.J.
 1990
 50 1-4 p. 127-130
4 p.
 artikel
40 Editorial Bethge, K.
 1990
 50 1-4 p. vii-viii
nvt p.
 artikel
41 Editorial board 1990
 50 1-4 p. ii-
1 p.
 artikel
42 Electron accelerators at the ENEA center at Frascati: Development and application Bizzarri, U.
 1990
 50 1-4 p. 331-337
7 p.
 artikel
43 Energy control of the IMPELATM series of industrial accelerators Hare, G.
 1990
 50 1-4 p. 470-473
4 p.
 artikel
44 Fluorine profiling after application of various anti-caries gels Zschau, H.-E.
 1990
 50 1-4 p. 74-76
3 p.
 artikel
45 High-dose iron implantation into silicon and metals Müller, G.
 1990
 50 1-4 p. 384-390
7 p.
 artikel
46 Hydrogen dynamics in electrochromic multilayer systems investigated by the 15N technique Wagner, W.
 1990
 50 1-4 p. 27-30
4 p.
 artikel
47 Hydrogen profiling of Nb-Hf-Nb layers by the 15N method Steiger, J.
 1990
 50 1-4 p. 31-34
4 p.
 artikel
48 Influence of electronic charge compensation on Rutherford backscattering spectra of biased insulators Meyer, J.D.
 1990
 50 1-4 p. 109-113
5 p.
 artikel
49 Investigation of films of YBa2Cu3O7 using Rutherford backscattering spectrometry Sokhi, R.S.
 1990
 50 1-4 p. 140-144
5 p.
 artikel
50 Investigation of point defects by temperature-dependent dechanneling Götz, G.
 1990
 50 1-4 p. 131-134
4 p.
 artikel
51 Investigations of lattice location and mobility of carbon in GaAs using the channeling technique Mader, A.
 1990
 50 1-4 p. 35-38
4 p.
 artikel
52 Ion beam mixing of titanium films on stainless steel Bolse, Wolfgang
 1990
 50 1-4 p. 416-419
4 p.
 artikel
53 Ion beam modification of metals Dearnaley, G.
 1990
 50 1-4 p. 358-367
10 p.
 artikel
54 Iron-implanted sintered alumina studied by RBS, CEMS AND SEM techniques Donnet, C.
 1990
 50 1-4 p. 410-415
6 p.
 artikel
55 Mass selection and depth profiling by coincident recoil detection for nuclei in the middle mass region Klein, S.S.
 1990
 50 1-4 p. 150-153
4 p.
 artikel
56 Materials analysis using ion beam techniques Boerma, D.O.
 1990
 50 1-4 p. 77-90
14 p.
 artikel
57 Materials applications of nuclear microprobes Cookson, J.A.
 1990
 50 1-4 p. 208-216
9 p.
 artikel
58 Measurements of natural concentrations of 129I in uranium ores by accelerator mass spectrometry Boaretto, Elisabetta
 1990
 50 1-4 p. 280-285
6 p.
 artikel
59 Micro-PIXE analyses of trace elements in black shales from the Lower Zechstein copper deposits, Poland Przybyłowicz, W.
 1990
 50 1-4 p. 231-237
7 p.
 artikel
60 Multidimensional ERDA measurements and depth profiling of medium-heavy elements Gebauer, B.
 1990
 50 1-4 p. 159-166
8 p.
 artikel
61 Nuclear mubeams: Realization and use as scientific tool Traxel, Kurt
 1990
 50 1-4 p. 177-188
12 p.
 artikel
62 Nuclear muscopy — Elemental mapping using high-energy ion beam techniques Grime, G.W.
 1990
 50 1-4 p. 197-207
11 p.
 artikel
63 On the analysis of neonatal hamster tooth germs with the photon microprobe at Daresbury, UK Tros, G.H.J.
 1990
 50 1-4 p. 343-346
4 p.
 artikel
64 PECVD Si nitride and Si oxide layers — Hydrogen analysis and etching after ion implantation Neelmeijer, C.
 1990
 50 1-4 p. 439-443
5 p.
 artikel
65 PIXE measurements of Kr-sputtered TiN coatings Osipowicz, Thomas
 1990
 50 1-4 p. 238-242
5 p.
 artikel
66 Production of particle-track membranes by means of a 5 MV tandem accelerator Lück, H.B.
 1990
 50 1-4 p. 395-400
6 p.
 artikel
67 Proton microprobe studies of the mineralization process in selected organic matrices Rokita, E.
 1990
 50 1-4 p. 217-220
4 p.
 artikel
68 Quantitative microanalysis of matrix elements in biological samples by MeV proton scattering Hult, Mikael
 1990
 50 1-4 p. 154-158
5 p.
 artikel
69 RBS analyses of xenon-irradiated Ti and TiN films Weber, Th.
 1990
 50 1-4 p. 95-101
7 p.
 artikel
70 RBS analysis of front contacts for surface-barrier detectors Stojanović, M.S.
 1990
 50 1-4 p. 102-104
3 p.
 artikel
71 RBS analysis of GaAs and InP after electron beam annealing Roland, G.
 1990
 50 1-4 p. 145-149
5 p.
 artikel
72 RBS investigations of buffer layers between YBa2Cu3O7−x and silicon Lubig, A.
 1990
 50 1-4 p. 114-118
5 p.
 artikel
73 Recent developments in ion implantation accelerators Thomae, R.W.
 1990
 50 1-4 p. 444-454
11 p.
 artikel
74 Research at the positron source TEPOS Ebel, F.
 1990
 50 1-4 p. 328-330
3 p.
 artikel
75 RFQ accelerators for ion implantation Schempp, A.
 1990
 50 1-4 p. 460-464
5 p.
 artikel
76 Selection of the experimental conditions for white-light SRIXE measurements Kwiatek, W.M.
 1990
 50 1-4 p. 347-352
6 p.
 artikel
77 Sensitivity of trace-element analysis by X-ray emission induced by 0.1–10 MeV electrons Georgiadis, A.P.
 1990
 50 1-4 p. 321-327
7 p.
 artikel
78 Seven years of research using the Bruyeres le Chatel microprobe facility: A review Trocellier, P.
 1990
 50 1-4 p. 247-251
5 p.
 artikel
79 Silicon diffusion in gold grain boundaries studied with a deuteron microbeam Mathot, S.
 1990
 50 1-4 p. 52-56
5 p.
 artikel
80 Sputtering yield and residual vacuum influence during titanium implantation into iron Khakani, M.A.El
 1990
 50 1-4 p. 406-409
4 p.
 artikel
81 Superconducting minicyclotrons in AMS Subotić, K.M.
 1990
 50 1-4 p. 267-270
4 p.
 artikel
82 Surface characterization with keV clusters and MeV ions Schweikert, E.A.
 1990
 50 1-4 p. 307-313
7 p.
 artikel
83 Temperature and dose dependences of nitrogen implantation into aluminium Lucas, S.
 1990
 50 1-4 p. 401-405
5 p.
 artikel
84 The formation of compound layers in silicon by ion beam synthesis Stephens, K.G.
 1990
 50 1-4 p. 368-378
11 p.
 artikel
85 The irradiation laboratory at ČKD semiconductors Praha Klisky, Vladimir
 1990
 50 1-4 p. 420-422
3 p.
 artikel
86 The Stuttgart positron beam, its performance and recent experiments Bauer, W.
 1990
 50 1-4 p. 300-306
7 p.
 artikel
87 Thin-layer activation of hip-joint prostheses for tribological tests Neumann, W.
 1990
 50 1-4 p. 57-61
5 p.
 artikel
88 Thin reference layers available for calibration purposes in ion beam analysis Wätjen, U.
 1990
 50 1-4 p. 172-176
5 p.
 artikel
89 Time-of-flight spectrometry for materials analysis Stanescu, T.M.
 1990
 50 1-4 p. 167-171
5 p.
 artikel
90 Trace-element study of glass samples by using activation methods Ditrói, F.
 1990
 50 1-4 p. 62-64
3 p.
 artikel
91 Trace-impurity detection by Rutherford backscattering and nuclear resonance reactions Maisch, Th.
 1990
 50 1-4 p. 1-9
9 p.
 artikel
                             91 gevonden resultaten
 
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