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                             165 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absolute surface carbon coverage determination via the 12C(3He, p)14N reaction Tong, S.Y.
1990
45 1-4 p. 91-94
4 p.
artikel
2 A computer study of the energy loss spectrum of 100 keV H+ at a W(111) surface Yamamura, Y.
1990
45 1-4 p. 403-407
5 p.
artikel
3 A curved detection slit to improve ERD energy and depth resolution Brice, D.K.
1990
45 1-4 p. 265-269
5 p.
artikel
4 A 2-dimensional RBS simulation program for studying the edges of multilayer integrated circuit components Guo, X.S.
1990
45 1-4 p. 157-159
3 p.
artikel
5 Advanced concepts for semiconductor nuclear radiation detectors Kemmer, J.
1990
45 1-4 p. 247-251
5 p.
artikel
6 A 500 keV ion beam accelerator for microbeam formation Agawa, Y.
1990
45 1-4 p. 540-542
3 p.
artikel
7 A low-background detection system using a BGO detector for sensitive hydrogen analysis with the 1H(15N, αγ)12C reaction Kuhn, D.
1990
45 1-4 p. 252-255
4 p.
artikel
8 A microbeam line for medium-energy ion beams Takai, M.
1990
45 1-4 p. 553-556
4 p.
artikel
9 AMS advances in the geosciences and heavy-element analysis Rucklidge, J.C.
1990
45 1-4 p. 565-569
5 p.
artikel
10 Analysis of a high-T c superconductor by high-energy elastic backscattering Shiming, Wu
1990
45 1-4 p. 227-229
3 p.
artikel
11 Analysis of carbon at trace level by ion sputtering and laser resonant postionization Gelin, P.
1990
45 1-4 p. 580-581
2 p.
artikel
12 Analysis of proton channeling by lead fluoride Benenson, R.E.
1990
45 1-4 p. 499-502
4 p.
artikel
13 Analytical capabilities of ERDA in transmission geometry Tirira, J.
1990
45 1-4 p. 147-150
4 p.
artikel
14 Analytic calculation for some useful depth profiles of the linear expansion coefficients used in spaces Amsel, Georges
1990
45 1-4 p. 12-15
4 p.
artikel
15 An investigation of laser desorption of Au by PIXE and RBS techniques using a He beam Houdayer, A.J.
1990
45 1-4 p. 632-636
5 p.
artikel
16 An iterative computer analysis package for elastic recoil detection (ERD) experiments Oxorn, K.
1990
45 1-4 p. 166-170
5 p.
artikel
17 A portable system for microdosimetric intercomparisons by task group # 20 of the American Association of Physicists in Medicine (AAPM) Dicello, J.F.
1990
45 1-4 p. 724-729
6 p.
artikel
18 ARAMIS: An ambidextrous 2 MV accelerator for IBA and MeV implantation Cottereau, E.
1990
45 1-4 p. 293-295
3 p.
artikel
19 A study of electron beam evaporated SiO2, TiO2, and Al2O2 films using RBS, HFS, and SIMS Baumann, S.M.
1990
45 1-4 p. 664-668
5 p.
artikel
20 A study of fluorine in tin oxide films Zironi, E.P.
1990
45 1-4 p. 115-118
4 p.
artikel
21 A study of hydrogen atoms on solid surfaces by utilizing the doppler broadening of the 1H(15N, αγ)12C nuclear reaction Fujimoto, Fuminori
1990
45 1-4 p. 49-53
5 p.
artikel
22 A Tandetron-based microbeam system Sie, S.H.
1990
45 1-4 p. 543-547
5 p.
artikel
23 Author index 1990
45 1-4 p. 731-743
13 p.
artikel
24 Behaviour of the 12C(4He, 4He)12C elastic scattering cross section at E α = 0.4–1.8 MeV Tong, S.Y.
1990
45 1-4 p. 30-32
3 p.
artikel
25 Below-surface analysis of inclusions with PIXE and PIGE MacArthur, J.D.
1990
45 1-4 p. 322-326
5 p.
artikel
26 Boron analysis of thin layers using prompt nuclear techniques Moncoffre, N.
1990
45 1-4 p. 81-85
5 p.
artikel
27 Calculation of energy loss spectra through very thin layers: Application to tandem accelerator gas strippers Vickridge, Ian
1990
45 1-4 p. 16-19
4 p.
artikel
28 Calculation of the stopping power changes due to the superconducting transition in high-Tc YBa2Cu3O7 superconductors Guo, X.S.
1990
45 1-4 p. 698-700
3 p.
artikel
29 Channeling lattice location of Se implanted into InP by RBS and PIXE Xiao, Q.F.
1990
45 1-4 p. 464-466
3 p.
artikel
30 Characterization of CVD-hydrogenated diamondlike thin films on silicon by EELS, RBS/channeling and nuclear reaction analysis Bruley, J.
1990
45 1-4 p. 618-621
4 p.
artikel
31 Characterization of external 3He ion beams used for ex-vacuo nuclear reaction analysis of deuterium Lee, S.R.
1990
45 1-4 p. 285-289
5 p.
artikel
32 Characterization of masklessly deposited metal lines by a micro-RBS probe Kinomura, A.
1990
45 1-4 p. 536-539
4 p.
artikel
33 Characterization of porous silicon by NRA, RBS and channeling Ortega, C.
1990
45 1-4 p. 622-626
5 p.
artikel
34 Charge exchange processes in low-energy He+ ion scattering from Si and Pd2Si surfaces Van Leerdam, G.C.
1990
45 1-4 p. 390-393
4 p.
artikel
35 Colorants used in ancient Egyptian glassmaking: Specialized studies using PIXE spectrometry Swann, C.P.
1990
45 1-4 p. 311-314
4 p.
artikel
36 Combined RBS/channeling and PAC studies of hafnium-doped LiNbO3 Rebouta, L.
1990
45 1-4 p. 495-498
4 p.
artikel
37 Comparison between oxygen depth profiles in oxygen-implanted titanium measured by RBS and XPS combined with argon sputtering Iwaki, Masaya
1990
45 1-4 p. 212-215
4 p.
artikel
38 Composition profiles due to bombardment-induced segregation in Cu-Ni samples as deduced by auger spectroscopy Jiang, S.L.
1990
45 1-4 p. 646-650
5 p.
artikel
39 Computer simulation of ion beam mixing Han, S.H.
1990
45 1-4 p. 701-706
6 p.
artikel
40 Computer simulation of ionized cluster beam bombardment on a carbon substrate Yamamura, Yasunori
1990
45 1-4 p. 707-713
7 p.
artikel
41 Computer simulation of reionization in ISS Pierson, E.
1990
45 1-4 p. 374-379
6 p.
artikel
42 Criteria for validity of Rutherford scatter analyses Butler, J.W.
1990
45 1-4 p. 160-165
6 p.
artikel
43 Cross sections for pion, proton, and heavy-ion production from 800 MeV protons incident upon aluminum and silicon Dicello, J.F.
1990
45 1-4 p. 135-138
4 p.
artikel
44 Cross sections for the 32S(p, p′γ)32S nuclear reaction used for the profiling of sulphur on materials surfaces Tsartsarakos, C.
1990
45 1-4 p. 33-35
3 p.
artikel
45 Crystallographic polarity of ideomorphic faces on a cubic boron nitride single crystal determined by Rutherford backscattering spectroscopy Kobayashi, T.
1990
45 1-4 p. 208-211
4 p.
artikel
46 Deep range profiling by Rutherford backscattering and nuclear reaction analysis Oberschachtsiek, P.
1990
45 1-4 p. 20-25
6 p.
artikel
47 Depth-dependent defect analysis in RBS/channeling Savin, W.
1990
45 1-4 p. 417-419
3 p.
artikel
48 Depth profiling of light elements using elastic recoil coincidence spectroscopy (ERCS) Hofsäss, H.C.
1990
45 1-4 p. 151-156
6 p.
artikel
49 Description of a sample holder for ion channeling near liquid-helium temperature Daudin, B.
1990
45 1-4 p. 290-292
3 p.
artikel
50 Detection of surface accumulation of dopants in rapid-thermally-annealed, shallow-implant silicon Scanlon, P.J.
1990
45 1-4 p. 615-617
3 p.
artikel
51 Determination of hydrogen in leached UO2 and SYNROC Matzke, Hj.
1990
45 1-4 p. 194-198
5 p.
artikel
52 Determination of the infrared proportionality coefficient of the CH n stretching mode for a-C:H and a-SiC:H films using ERD methods Tanaka, M.
1990
45 1-4 p. 223-226
4 p.
artikel
53 Deuterium distributions in cathodically charged type-304 stainless steel measured by the d(3He, p)α nuclear reaction Laursen, T.
1990
45 1-4 p. 66-69
4 p.
artikel
54 Dynamic inventory of implanted deuterium in graphite at 116–223 K Scherzer, B.M.U.
1990
45 1-4 p. 54-56
3 p.
artikel
55 Editorial Board 1990
45 1-4 p. ii-iii
nvt p.
artikel
56 Elastic recoil detection analysis of hydrogen adsorbed on solid surfaces Oura, Kenjiro
1990
45 1-4 p. 199-202
4 p.
artikel
57 Electronic excitation and charge exchange in low-energy He+ scattering from solid surfaces Souda, R.
1990
45 1-4 p. 364-368
5 p.
artikel
58 Epitaxial growth analysis of YBaCuO thin films by ion backscattering and channeling spectrometry Meyer, O.
1990
45 1-4 p. 483-487
5 p.
artikel
59 ERDA of hydrogen and helium using an 8 MeV 16O beam Qiu, Qi
1990
45 1-4 p. 186-189
4 p.
artikel
60 ERD measurement of the mean ranges and variances of 0.75–2.0 keV deuterium ions in Be, C and Si Ross, G.G.
1990
45 1-4 p. 190-193
4 p.
artikel
61 External ion beam analysis of the TFTR bumper limiters Walsh, D.S.
1990
45 1-4 p. 62-65
4 p.
artikel
62 Fast analysis of oxygen in fluoride glasses (ZBLAN) by charged-particle activation [16O(d, n)17F] Barthe, M.F.
1990
45 1-4 p. 105-106
2 p.
artikel
63 Fits of non-rutherford cross sections and their inclusion in the RUMP simulator Knox, J.M.
1990
45 1-4 p. 26-29
4 p.
artikel
64 Fluorine depth profiles as a relative dating method of chipped flints Walter, P.
1990
45 1-4 p. 119-122
4 p.
artikel
65 Formation of buried and surface CoSi2 layers by ion implantation Wu, M.F.
1990
45 1-4 p. 658-663
6 p.
artikel
66 Heavy-ion backscattering spectrometry (HIBS) for high-sensitivity surface impurity detection Knapp, J.A.
1990
45 1-4 p. 143-146
4 p.
artikel
67 Heavy-ion energy loss Sofield, C.J.
1990
45 1-4 p. 684-688
5 p.
artikel
68 Heavy-ion energy resolution of SSB detectors Hinrichsen, P.F.
1990
45 1-4 p. 275-280
6 p.
artikel
69 High-resolution analysis of protons scattered from solid surfaces Matsunami, Noriaki
1990
45 1-4 p. 412-415
4 p.
artikel
70 Hydrogen in “anhydrous” minerals Rossman, George R.
1990
45 1-4 p. 41-44
4 p.
artikel
71 Hydrogen in the first wall of nuclear fusion plasma devices Scherzer, B.M.U.
1990
45 1-4 p. 57-61
5 p.
artikel
72 IBA applied to adsorption and coadsorption studies of H2 and C6H6 on Ni(111) Fallavier, M.
1990
45 1-4 p. 130-134
5 p.
artikel
73 IBA in minerals research: Progress and prospects Sie, S.H.
1990
45 1-4 p. 604-609
6 p.
artikel
74 IBA in the museum: Why AGLAE Menu, Michel
1990
45 1-4 p. 597-603
7 p.
artikel
75 IBA using a small tandem and a single-ended Van de Graaff Arai, E.
1990
45 1-4 p. 234-238
5 p.
artikel
76 Identification of pigments in some colours on miniatures from the medieval age and early Renaissance MacArthur, J.D.
1990
45 1-4 p. 315-321
7 p.
artikel
77 Impact-collision ion-scattering spectrometry studies of the Si(111)−( 3 × 3 )In surface Cornelison, D.M.
1990
45 1-4 p. 394-397
4 p.
artikel
78 Impact-collision ion scattering spectroscopy for direct surface structure analysis Daley, Richard S.
1990
45 1-4 p. 380-383
4 p.
artikel
79 Improvement of the energy resolution and the S N ratio of a crystal spectrometer combined with a position-sensitive proportional counter for PIXE Hamanaka, H.
1990
45 1-4 p. 360-363
4 p.
artikel
80 Inelastic scattering of D, He, and Li ions from KI Souda, R.
1990
45 1-4 p. 369-373
5 p.
artikel
81 Investigation of a molybdena crystal by RBS Zhang, Jizhong
1990
45 1-4 p. 239-241
3 p.
artikel
82 Investigation of defects in GaAs by dechanneling Wesch, W.
1990
45 1-4 p. 446-449
4 p.
artikel
83 Ion beam analysis of edge effects in Al/M/Al stripes Guo, X.S.
1990
45 1-4 p. 123-125
3 p.
artikel
84 Ion-beam mixing in micron-size widths Benenson, R.E.
1990
45 1-4 p. 519-522
4 p.
artikel
85 Ion bombardment effect on a Nb/Cu interface studied by RBS, NRS, SEM techniques El Bouanani, M.
1990
45 1-4 p. 651-657
7 p.
artikel
86 Ion channeling analysis of extended-defect annealing in silicon by rapid thermal processes Calcagno, L.
1990
45 1-4 p. 442-445
4 p.
artikel
87 Ion channeling study of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) grown by MBE Hashimoto, Shin
1990
45 1-4 p. 434-437
4 p.
artikel
88 Ion-induced Auger electron studies on Al(110) Wong, L.
1990
45 1-4 p. 637-640
4 p.
artikel
89 Ion irradiation effect in a Bi-Sr-Ca-Cu-O oxide superconductor Kobayashi, T.
1990
45 1-4 p. 480-482
3 p.
artikel
90 Lattice location of B atoms in Ni0.75Al0.15Ti0.10 intermetallic compounds as observed by the channeling method Tanaka, Koki
1990
45 1-4 p. 471-475
5 p.
artikel
91 Lattice site location of clustered boron atoms in silicon Smulders, P.J.M.
1990
45 1-4 p. 438-441
4 p.
artikel
92 Lattice site location of Te in GaAs Smulders, P.J.M.
1990
45 1-4 p. 450-454
5 p.
artikel
93 LPCVD of tungsten studied with in-situ RBS Willemsen, M.F.C.
1990
45 1-4 p. 242-246
5 p.
artikel
94 Matrix effects in sims depth profiles of SiGe superlattices Jackman, J.A.
1990
45 1-4 p. 592-596
5 p.
artikel
95 Measurements of the accumulation of hydrogen at the silicon-silicon-dioxide interface using nuclear reaction analysis Briere, M.A.
1990
45 1-4 p. 45-48
4 p.
artikel
96 Medium-energy ion scattering studies of the structure of some reconstructed metal surfaces Gustafsson, Torgny
1990
45 1-4 p. 398-402
5 p.
artikel
97 Micro- and milli-PIXE analysis at 40 MeV — Why, how and when? McKee, J.S.C.
1990
45 1-4 p. 513-515
3 p.
artikel
98 Micro-PIXE analysis of impurity distributions in “trees” grown in high-voltage cables Hinrichsen, P.F.
1990
45 1-4 p. 532-535
4 p.
artikel
99 Molecular-interference-free accelerator mass spectrometry Matteson, S.
1990
45 1-4 p. 575-579
5 p.
artikel
100 Monte Carlo simulation of RBS spectra: Comparison to experimental and empirical results Steinbauer, Erich
1990
45 1-4 p. 171-175
5 p.
artikel
101 Neutron depth profiling by coincidence spectrometry Parikh, Nalin R.
1990
45 1-4 p. 70-74
5 p.
artikel
102 Off-resonance and straggling measurements using the 1H(15N, αγ)12C reaction Hjörvarsson, B.
1990
45 1-4 p. 36-40
5 p.
artikel
103 18O isotope studies on the redistribution of oxygen in noncontinuous buried layers formed by high-dose oxygen ion implantation Chater, R.J.
1990
45 1-4 p. 110-114
5 p.
artikel
104 On the ambiguity in the analysis of Rutherford backscattering spectra Alkemade, P.F.A.
1990
45 1-4 p. 139-142
4 p.
artikel
105 On the calibration of low-energy ion accelerators Lennard, W.N.
1990
45 1-4 p. 281-284
4 p.
artikel
106 Overview of proton beam applications in therapy Sisterson, J.M.
1990
45 1-4 p. 718-723
6 p.
artikel
107 Oxygen depth-profile channeling of radiation-damaged high-T c thin-film superconductors Tesmer, J.R.
1990
45 1-4 p. 476-479
4 p.
artikel
108 Oxygen redistribution in silicon during zone melting recrystallization Mertens, P.W.
1990
45 1-4 p. 586-591
6 p.
artikel
109 Peak shape analysis for the determination of interface structure in reactive metallic bilayers: Pd on Al Smith, R.J.
1990
45 1-4 p. 429-433
5 p.
artikel
110 PIXE analysis and imaging of papyrus documents Lövestam, N.E.Göran
1990
45 1-4 p. 307-310
4 p.
artikel
111 PIXE analysis of GaAs and ZnSe Reid, I.
1990
45 1-4 p. 347-351
5 p.
artikel
112 PIXE analysis to determine the trace-element concentrations in a series of galena (PbS) specimens from different localities Reeson, Karen J.
1990
45 1-4 p. 327-332
6 p.
artikel
113 PIXE and PIGE studies of ion diffusion through phospholipid bilayers containing cholesterol Palmer, G.R.
1990
45 1-4 p. 337-340
4 p.
artikel
114 PIXE: A tool for research and education Williams, Evan T.
1990
45 1-4 p. 356-359
4 p.
artikel
115 PIXE determination of silicon/aluminium ratios in zeolites and geological materials Pillay, A.E.
1990
45 1-4 p. 333-336
4 p.
artikel
116 PIXE measurements of air particulate elemental composition in the urban area of Florence, Italy Del Carmine, P.
1990
45 1-4 p. 341-346
6 p.
artikel
117 PIXE-PIGE analysis of thin fly-ash samples Boni, C.
1990
45 1-4 p. 352-355
4 p.
artikel
118 Polarity determination of epitaxial structures of CdTe on GaAs by channeling techniques Wielunski, L.S.
1990
45 1-4 p. 459-463
5 p.
artikel
119 Preface Scanlon, P.J.
1990
45 1-4 p. vii-viii
nvt p.
artikel
120 Pulse height defects for 16O, 35Cl and 81Br ions in silicon surface barrier detectors Cliche, L.
1990
45 1-4 p. 270-274
5 p.
artikel
121 Range parameters of heavy ions implanted into Be films Grande, P.L.
1990
45 1-4 p. 689-692
4 p.
artikel
122 RBS, AES and XRD investigations of high-dose nitrogen-implanted Ti, Cr, Fe, Zr and Nb sheets Fujihana, Takanobu
1990
45 1-4 p. 669-672
4 p.
artikel
123 RBS analysis of Si diffusion in photoresist during silylation Madakson, P.
1990
45 1-4 p. 216-218
3 p.
artikel
124 RBS/channeling study on the annealing behavior of Cu thin films on Si(100) and (111) substrates Nakahara, Takehiko
1990
45 1-4 p. 467-470
4 p.
artikel
125 RBS study on bombardment-induced redistribution of copper impurities in silicon using neon, oxygen and nitrogen ion beams at different impact angles Menzel, N.
1990
45 1-4 p. 219-222
4 p.
artikel
126 RBS tomography of SOI structures using a MeV ion microprobe Kinomura, A.
1990
45 1-4 p. 523-526
4 p.
artikel
127 Real-time monitoring of molecular-beam epitaxy processes with coaxial impact-collision ion scattering spectroscopy (CAICISS) Katayama, M.
1990
45 1-4 p. 408-411
4 p.
artikel
128 Recent advances in the nuclear microprobe at the Lund institute of technology Pallon, Jan
1990
45 1-4 p. 548-552
5 p.
artikel
129 Regrowth of radiation-damaged layers in natural diamond Liu, B.
1990
45 1-4 p. 420-423
4 p.
artikel
130 Residual carbon detection in ceramic substrates by a nuclear reaction technique Chou, N.J.
1990
45 1-4 p. 86-90
5 p.
artikel
131 RFQ ion accelerators Schempp, A.
1990
45 1-4 p. 302-306
5 p.
artikel
132 Room-temperature deposition and initial stages of cobalt silicide interface formation on A Si(111) √3 × √3 surface Luo, L.
1990
45 1-4 p. 488-491
4 p.
artikel
133 Scattering recoil coincidence spectrometry: A new experimental technique for profiling hydrogen isotopes in low-Z thin films Forster, J.S.
1990
45 1-4 p. 176-180
5 p.
artikel
134 Segregation at the clean and oxidized Pt0.5Ni0.5(111) surface studied by medium-energy ion scattering Deckers, S.
1990
45 1-4 p. 416-
1 p.
artikel
135 Selective activation analysis with ion-beam-tailored neutron spectra — A comparison between the reactions 7 Li(p, n)7Be and 9Be(p, n)9B Watterson, J.I.W.
1990
45 1-4 p. 75-80
6 p.
artikel
136 Simulation and evaluation of nuclear reaction spectra Vizkelethy, G.
1990
45 1-4 p. 1-5
5 p.
artikel
137 Single-event correlation between heavy ions and 252Cf fission fragments Browning, John S.
1990
45 1-4 p. 714-717
4 p.
artikel
138 Some archaeologic applications of accelerator radiocarbon analysis Donahue, D.J.
1990
45 1-4 p. 561-564
4 p.
artikel
139 Some practical considerations for ion microtomography Pontau, A.E.
1990
45 1-4 p. 503-507
5 p.
artikel
140 SPACES: A PC implementation of the stochastic theory of energy loss for narrow-resonance depth profiling Vickridge, Ion
1990
45 1-4 p. 6-11
6 p.
artikel
141 Stopping power of light ions near the maximum Bauer, Peter
1990
45 1-4 p. 673-683
11 p.
artikel
142 Structural analysis of an epitaxial layer of CdTe on GaAs by the multidirectional channeling technique Wielunski, L.S.
1990
45 1-4 p. 455-458
4 p.
artikel
143 Studies of surface atomic structure of Al(l00) by MeV ion scattering Huan-Sheng, Cheng
1990
45 1-4 p. 424-428
5 p.
artikel
144 Study of ionic movements during anodic oxidation of nitrogen-implanted aluminium Terwagne, G.
1990
45 1-4 p. 95-99
5 p.
artikel
145 Suppression of background radiation in BGO and NaI detectors used in nuclear reaction analysis Horn, K.M.
1990
45 1-4 p. 256-259
4 p.
artikel
146 Surface analysis by spectroscopy of Auger electrons induced by fast protons at grazing incidence Pfandzelter, R.
1990
45 1-4 p. 641-645
5 p.
artikel
147 Tandetron accelerators as AMS instruments Kieser, W.E.
1990
45 1-4 p. 570-574
5 p.
artikel
148 Temperature dependence of damage ranges in some metals after argon implantation Friedland, E.
1990
45 1-4 p. 492-494
3 p.
artikel
149 The analysis of semiconductor thin films with complementary Mössbauer scattering-RBS, channeling and nuclear reaction Stedile, F.C.
1990
45 1-4 p. 627-631
5 p.
artikel
150 The application of synchrotron radiation to microprobe trace-element analysis of biological samples Gordon, B.M.
1990
45 1-4 p. 527-531
5 p.
artikel
151 The dedicated accelerator-based IBA facility AGLAE at the Louvre Menu, M.
1990
45 1-4 p. 610-614
5 p.
artikel
152 The detection of heavy ions with PIN diodes Gujrathi, S.C.
1990
45 1-4 p. 260-264
5 p.
artikel
153 The determination of absolute oxygen coverage by nuclear reaction analysis Mitchell, I.V.
1990
45 1-4 p. 107-109
3 p.
artikel
154 The influence of accelerator parameters on the performance of submicron quadrupole probe-forming systems Grime, G.W.
1990
45 1-4 p. 508-512
5 p.
artikel
155 The microprobe at the Eindhoven University of Technology Mutsaers, P.H.A.
1990
45 1-4 p. 557-560
4 p.
artikel
156 The 2 MV tandem pelletron accelerator of the Louvre Museum Amsel, G.
1990
45 1-4 p. 296-301
6 p.
artikel
157 Theoretical and experimental study of low-energy 4He-induced 1H elastic recoil with application to hydrogen behavior in solids Tirira, J.
1990
45 1-4 p. 203-207
5 p.
artikel
158 The use of a calibration in low-energy ion scattering: Preferential sputtering and S segregation in CuPd alloys Ackermans, P.A.J.
1990
45 1-4 p. 384-389
6 p.
artikel
159 The use of helium ion RBS for profiling epitaxial layers of Cd x Hg1−x Te Avery, A.J.
1990
45 1-4 p. 181-185
5 p.
artikel
160 The use of ion beam techniques to characterize lead diffusion in minerals Cherniak, D.J.
1990
45 1-4 p. 230-233
4 p.
artikel
161 The wake potential and dynamic screening in a hydrogen system Guo, X.S.
1990
45 1-4 p. 693-697
5 p.
artikel
162 Thin-layer activation applied to erosive wear Neumann, W.
1990
45 1-4 p. 126-129
4 p.
artikel
163 Time-dependent angular distribution of sputtered particles from amorphous targets Yamamura, Yasunori
1990
45 1-4 p. 582-585
4 p.
artikel
164 Total analysis by IBA Bird, J.R.
1990
45 1-4 p. 514-518
5 p.
artikel
165 Use of the 16O(3He, α)15O reaction for studying oxygen-containing thin films Abel, F.
1990
45 1-4 p. 100-104
5 p.
artikel
                             165 gevonden resultaten
 
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