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                             75 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite Biró, L.P.
 1999
 147 1-4 p. 142-147
6 p.
 artikel
2 Annealing behaviour of defects in helium implanted MgO Schut, H.
 1999
 147 1-4 p. 212-215
4 p.
 artikel
3 Anomalous field dependence of deep level emission in proton irradiated silicon Keskitalo, Niclas
 1999
 147 1-4 p. 427-431
5 p.
 artikel
4 A novel (SiC)1− x (AlN) x compound synthesized using ion beams Pezoldt, J.
 1999
 147 1-4 p. 273-278
6 p.
 artikel
5 As–Al recoil implantation through Si3N4 barrier layer Godignon, P.
 1999
 147 1-4 p. 101-105
5 p.
 artikel
6 A simple way to analyze infrared reflectivity spectra of p-type Hg0.78Cd0.22Te implanted in various conditions Lévêque, P.
 1999
 147 1-4 p. 181-186
6 p.
 artikel
7 Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements Ridgway, M.C.
 1999
 147 1-4 p. 148-154
7 p.
 artikel
8 Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon Belogorokhov, A.I
 1999
 147 1-4 p. 320-326
7 p.
 artikel
9 Comparative study of damage production in ion implanted III–V-compounds at temperatures from 20 to 420 K Wendler, E
 1999
 147 1-4 p. 155-165
11 p.
 artikel
10 Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry Lohner, T
 1999
 147 1-4 p. 90-95
6 p.
 artikel
11 Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry Petrik, P.
 1999
 147 1-4 p. 84-89
6 p.
 artikel
12 Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon Lindner, J.K.N
 1999
 147 1-4 p. 249-255
7 p.
 artikel
13 Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile Kögler, R.
 1999
 147 1-4 p. 96-100
5 p.
 artikel
14 Doping of 6H–SiC pn structures by proton irradiation Strel’chuk, Anatoly M
 1999
 147 1-4 p. 74-78
5 p.
 artikel
15 Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2 Bischoff, Lothar
 1999
 147 1-4 p. 327-331
5 p.
 artikel
16 Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films Zeng, Jianming
 1999
 147 1-4 p. 207-211
5 p.
 artikel
17 Effect of oxygen on ion-beam induced synthesis of SiC in silicon Artamonov, V.V.
 1999
 147 1-4 p. 256-260
5 p.
 artikel
18 Effects of BF2 + implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers Oh, M.S
 1999
 147 1-4 p. 49-55
7 p.
 artikel
19 Effects of hydrogen implantation into GaN Pearton, S.J.
 1999
 147 1-4 p. 171-174
4 p.
 artikel
20 Electronic stopping power for Monte Carlo simulation of ion implantation into SiC Morvan, E.
 1999
 147 1-4 p. 68-73
6 p.
 artikel
21 Electro-optic coefficients in H+-ion implanted LiNbO3 planar waveguide Boudrioua, A.
 1999
 147 1-4 p. 393-398
6 p.
 artikel
22 EPR study of a-Si structural relaxations Pivac, B.
 1999
 147 1-4 p. 132-135
4 p.
 artikel
23 Extended defects in Si wafers implanted with ions of rare-earth elements Vdovin, V.I.
 1999
 147 1-4 p. 116-121
6 p.
 artikel
24 Fabrication of [110]-aligned Si quantum wires embedded in SiO2 by low-energy oxygen implantation Ishikawa, Yukari
 1999
 147 1-4 p. 304-309
6 p.
 artikel
25 Formation of complex Al–N–C layer in aluminium by successive carbon and nitrogen implantation Uglov, V.V.
 1999
 147 1-4 p. 332-336
5 p.
 artikel
26 Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys Cristiano, F
 1999
 147 1-4 p. 35-42
8 p.
 artikel
27 Formation of thin silicon nitride layers on Si by low energy N2 + ion bombardment Bachurin, V.I.
 1999
 147 1-4 p. 316-319
4 p.
 artikel
28 Glancing incidence diffuse X-ray scattering studies of implantation damage in Si Nordlund, K.
 1999
 147 1-4 p. 399-409
11 p.
 artikel
29 Growth and characterization of Ge nanocrystals Guha, Soumyendu
 1999
 147 1-4 p. 367-372
6 p.
 artikel
30 Homogeneously size distributed Ge nanoclusters embedded in SiO2 layers produced by ion beam synthesis Markwitz, A.
 1999
 147 1-4 p. 361-366
6 p.
 artikel
31 Hydrogen implantation defects in MgO van Veen, A.
 1999
 147 1-4 p. 216-220
5 p.
 artikel
32 Imaging of implantation defects by X-ray topography combined with surface acoustic wave excitation Zolotoyabko, E.
 1999
 147 1-4 p. 410-415
6 p.
 artikel
33 Index 1999
 147 1-4 p. 433-442
10 p.
 artikel
34 Influence of argon and hydrogen ions energy on the structure of a-Si:H prepared by ion-beam-assisted evaporation Rinnert, H.
 1999
 147 1-4 p. 79-83
5 p.
 artikel
35 Ion beam and photoluminescence studies of Er and O implanted GaN Alves, E.
 1999
 147 1-4 p. 383-387
5 p.
 artikel
36 Ion beam assisted deposition of zirconium nitrides for modulated optical index structures Pichon, L.
 1999
 147 1-4 p. 378-382
5 p.
 artikel
37 Ion beam synthesis of gold nanoclusters in SiO2: Computer simulations versus experiments Strobel, M.
 1999
 147 1-4 p. 343-349
7 p.
 artikel
38 Ion implantation in TiO2: damage production and recovery, lattice site location and electrical conductivity Fromknecht, R.
 1999
 147 1-4 p. 191-201
11 p.
 artikel
39 Lattice location and annealing behaviour of Pt and W implanted sapphire Alves, E.
 1999
 147 1-4 p. 226-230
5 p.
 artikel
40 Light particle irradiation effects in Si nanocrystals Kachurin, G.A.
 1999
 147 1-4 p. 356-360
5 p.
 artikel
41 Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation Schmidt, D.C
 1999
 147 1-4 p. 127-131
5 p.
 artikel
42 Magnetic behavior of Ni+ implanted silica Cı́ntora-González, O
 1999
 147 1-4 p. 422-426
5 p.
 artikel
43 Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon Khánh, N.Q.
 1999
 147 1-4 p. 111-115
5 p.
 artikel
44 Migration and interaction properties of ion beam generated point defects in c-Si Libertino, Sebania
 1999
 147 1-4 p. 23-28
6 p.
 artikel
45 Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer Borodin, V.A.
 1999
 147 1-4 p. 286-291
6 p.
 artikel
46 Modeling of the kinetics of dislocation loops Lampin, E.
 1999
 147 1-4 p. 13-17
5 p.
 artikel
47 Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions Rybin, P.V.
 1999
 147 1-4 p. 279-285
7 p.
 artikel
48 Modification of a post-implantation defect activity for photovoltaic conversion Kuznicki, Z.T.
 1999
 147 1-4 p. 136-141
6 p.
 artikel
49 Nanohardness and structure of nitrogen implanted Si x Al y coatings post-implanted with oxygen Jacobs, M.
 1999
 147 1-4 p. 231-237
7 p.
 artikel
50 Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion Claverie, A.
 1999
 147 1-4 p. 1-12
12 p.
 artikel
51 Optical and electrical characterizations of Mn doped p-type β-FeSi2 Takada, T.
 1999
 147 1-4 p. 337-342
6 p.
 artikel
52 Optical properties of interacting Si nanoclusters in SiO2 fabricated by ion implantation and annealing Shimizu-Iwayama, Tsutomu
 1999
 147 1-4 p. 350-355
6 p.
 artikel
53 Peculiarities of defect generation in Si+-implanted GaAs (211) Bublik, V.T.
 1999
 147 1-4 p. 187-190
4 p.
 artikel
54 Photoluminescence studies of neutron-transmutation-doped InP:Fe Marı́, B
 1999
 147 1-4 p. 175-180
6 p.
 artikel
55 Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon Mannino, Giovanni
 1999
 147 1-4 p. 18-22
5 p.
 artikel
56 Preface Lindner, JörgK.N.
 1999
 147 1-4 p. vii-viii
nvt p.
 artikel
57 Radiation damage–He interaction in He implanted Si during bubble formation and their evolution in voids Raineri, V.
 1999
 147 1-4 p. 292-297
6 p.
 artikel
58 Residual defects in Cz-silicon after low dose self-implantation and annealing from 400°C to 800°C Schmidt, D.C.
 1999
 147 1-4 p. 106-110
5 p.
 artikel
59 Shallow junctions in p-In.53Ga.47As by ion implantation Blanco, M.N.
 1999
 147 1-4 p. 166-170
5 p.
 artikel
60 SiGe-on-insulator substrate fabricated by low energy oxygen implantation Ishikawa, Yukari
 1999
 147 1-4 p. 43-48
6 p.
 artikel
61 Si/Ge x Si1− x heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width Lombardo, S.
 1999
 147 1-4 p. 56-61
6 p.
 artikel
62 Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111) Vantomme, A
 1999
 147 1-4 p. 261-266
6 p.
 artikel
63 Stability of cavities formed by He+ implantation in silicon Roqueta, F.
 1999
 147 1-4 p. 298-303
6 p.
 artikel
64 Stability studies of Hg implanted YBa2Cu3O6+ x Araújo, J.P.
 1999
 147 1-4 p. 244-248
5 p.
 artikel
65 Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation Mantl, S.
 1999
 147 1-4 p. 29-34
6 p.
 artikel
66 Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2 Bonafos, C.
 1999
 147 1-4 p. 373-377
5 p.
 artikel
67 Structural stability of ion bombarded non-metallic systems Ossi, P.M.
 1999
 147 1-4 p. 202-206
5 p.
 artikel
68 Synchrotron radiation glancing incidence X-ray diffraction: a tool for structural investigations of ion implanted glasses Zontone, Federico
 1999
 147 1-4 p. 416-421
6 p.
 artikel
69 Synthesis of single-crystalline Al layers in sapphire Schlosser, W
 1999
 147 1-4 p. 267-272
6 p.
 artikel
70 TEM studies of the defects introduced by ion implantation in SiC Grisolia, J
 1999
 147 1-4 p. 62-67
6 p.
 artikel
71 Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects Ortiz, Ch.
 1999
 147 1-4 p. 122-126
5 p.
 artikel
72 Thermal stress resistance of ion implanted sapphire crystals Gurarie, V.N.
 1999
 147 1-4 p. 221-225
5 p.
 artikel
73 Thin amorphous gallium nitride films formed by ion beam synthesis Silva, S.R.P.
 1999
 147 1-4 p. 388-392
5 p.
 artikel
74 Wave-ordered structures formed on SOI wafers by reactive ion beams Smirnov, V.K.
 1999
 147 1-4 p. 310-315
6 p.
 artikel
75 Xenon-ion-beam modifications of a-SiO2 and Ni/a-SiO2 layers Schwickert, M.
 1999
 147 1-4 p. 238-243
6 p.
 artikel
                             75 gevonden resultaten
 
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