| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acknowledgement of Reviewers 2010
|
|
|
2010
|
284-285 |
12 |
p. 2642-2644
3 p.
|
artikel
|
| 2 |
Acknowledgment of reviewers
|
|
|
2009
|
284-285 |
12 |
p. I-III
nvt p.
|
artikel
|
| 3 |
Acknowledgment of Reviewers 2007
|
|
|
2007
|
284-285 |
12 |
p. I-
1 p.
|
artikel
|
| 4 |
A comparative study of depth profiling of interface statesusing charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs
|
Lee, Kyong Taek
|
|
2011
|
284-285 |
12 |
p. 3411-3414
4 p.
|
artikel
|
| 5 |
ALD of LaHfO x nano-laminates for high-κ gate dielectric applications
|
Lee, B.
|
|
2011
|
284-285 |
12 |
p. 3385-3388
4 p.
|
artikel
|
| 6 |
Analysis of reliability characteristics of high capacitance density MIM capacitors with SiO2–HfO2–SiO2 dielectrics
|
Park, Sang-Uk
|
|
2011
|
284-285 |
12 |
p. 3389-3392
4 p.
|
artikel
|
| 7 |
Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics
|
Kwon, Hyuk-Min
|
|
2011
|
284-285 |
12 |
p. 3415-3418
4 p.
|
artikel
|
| 8 |
An on-chip localized surface plasmon resonance-based biosensor for label-free monitoring of antigen–antibody reaction
|
Huang, Chengjun
|
|
2009
|
284-285 |
12 |
p. 2437-2441
5 p.
|
artikel
|
| 9 |
An optical study of alumina films thermal evolution upon ammonia annealing
|
Bellandi, Enrico
|
|
2008
|
284-285 |
12 |
p. 2406-2410
5 p.
|
artikel
|
| 10 |
A parameter study on the micro hot-embossing process of glassy polymer for pattern replication
|
Lan, Shuhuai
|
|
2009
|
284-285 |
12 |
p. 2369-2374
6 p.
|
artikel
|
| 11 |
A pixel-based regularization approach to inverse lithography
|
Poonawala, Amyn
|
|
2007
|
284-285 |
12 |
p. 2837-2852
16 p.
|
artikel
|
| 12 |
A study on the correlation between electrochemical corrosion and chemical mechanical polishing performance of W and Ti film
|
Seo, Yong-Jin
|
|
2007
|
284-285 |
12 |
p. 2769-2774
6 p.
|
artikel
|
| 13 |
Author Index - EMRS H
|
|
|
2008
|
284-285 |
12 |
p. 2459-2463
5 p.
|
artikel
|
| 14 |
Automatic full quantum analysis of CV measurements for bulk and SOI devices
|
Charbonnier, M.
|
|
2011
|
284-285 |
12 |
p. 3404-3406
3 p.
|
artikel
|
| 15 |
Bio/chemical detection in liquid with self-sensing Pr-Oxi-Lever (piezo-resistive SiO2 cantilever) sensors
|
Chen, Ying
|
|
2010
|
284-285 |
12 |
p. 2468-2474
7 p.
|
artikel
|
| 16 |
Bond pad surface quality for reliable wire bonding
|
Knotter, D. Martin
|
|
2011
|
284-285 |
12 |
p. 3452-3458
7 p.
|
artikel
|
| 17 |
Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs
|
Kwon, Hyuk-Min
|
|
2011
|
284-285 |
12 |
p. 3399-3403
5 p.
|
artikel
|
| 18 |
Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor
|
Choi, Won-Ho
|
|
2011
|
284-285 |
12 |
p. 3424-3427
4 p.
|
artikel
|
| 19 |
Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
|
Levichev, S.
|
|
2008
|
284-285 |
12 |
p. 2374-2377
4 p.
|
artikel
|
| 20 |
Charging simulations in nanocrystal quantum flash memories
|
Leroy, Y.
|
|
2008
|
284-285 |
12 |
p. 2354-2357
4 p.
|
artikel
|
| 21 |
Chemical mechanical planarization operation via dynamic programming
|
Lin, Chia-Shui
|
|
2007
|
284-285 |
12 |
p. 2817-2831
15 p.
|
artikel
|
| 22 |
Chemical vapor deposition of chalcogenide materials for phase-change memories
|
Abrutis, A.
|
|
2008
|
284-285 |
12 |
p. 2338-2341
4 p.
|
artikel
|
| 23 |
CMOS on dual SOI thickness for optimal performance
|
Lo, H.C.
|
|
2010
|
284-285 |
12 |
p. 2531-2534
4 p.
|
artikel
|
| 24 |
Compact modeling of 0.35μm SOI CMOS technology node for 4K DC operation using Verilog-A
|
Akturk, A.
|
|
2010
|
284-285 |
12 |
p. 2518-2524
7 p.
|
artikel
|
| 25 |
Comparison of different surface orientation in narrow fin MuGFETs
|
Lee, Chi-Woo
|
|
2009
|
284-285 |
12 |
p. 2381-2384
4 p.
|
artikel
|
| 26 |
Contents Continued...
|
|
|
2010
|
284-285 |
12 |
p. II-
1 p.
|
artikel
|
| 27 |
Continuous roll-to-flat thermal imprinting process for large-area micro-pattern replication on polymer substrate
|
Lan, Shuhuai
|
|
2010
|
284-285 |
12 |
p. 2596-2601
6 p.
|
artikel
|
| 28 |
Controlling resist thickness and etch depth for fabrication of 3D structures in electron-beam grayscale lithography
|
Kim, J.
|
|
2007
|
284-285 |
12 |
p. 2859-2864
6 p.
|
artikel
|
| 29 |
Control of sonoluminescence signal in deionized water using carbon dioxide
|
Kumari, S.
|
|
2011
|
284-285 |
12 |
p. 3437-3441
5 p.
|
artikel
|
| 30 |
Damascene TiN–Gd2O3-gate stacks: Gentle fabrication and electrical properties
|
Endres, Ralf
|
|
2011
|
284-285 |
12 |
p. 3393-3398
6 p.
|
artikel
|
| 31 |
Dependence of electrical properties on interfacial layer of Ta2O5 films
|
Lee, Jae-Woong
|
|
2007
|
284-285 |
12 |
p. 2865-2868
4 p.
|
artikel
|
| 32 |
Detailed analysis of charge pumping and I d V g hysteresis for profiling traps in SiO2/HfSiO(N)
|
Sahhaf, S.
|
|
2010
|
284-285 |
12 |
p. 2614-2619
6 p.
|
artikel
|
| 33 |
Development of large area nano imprint technology by step and repeat process and pattern stitching technique
|
Cho, Youngtae
|
|
2009
|
284-285 |
12 |
p. 2417-2422
6 p.
|
artikel
|
| 34 |
Dielectric constant of barium titanate/cyanoethyl ester of polyvinyl alcohol composite in comparison with the existing theoretical models
|
Kota, Ravikiran
|
|
2007
|
284-285 |
12 |
p. 2853-2858
6 p.
|
artikel
|
| 35 |
Direct stamp fabrication for NIL and hot embossing using HSQ
|
Gadegaard, N.
|
|
2007
|
284-285 |
12 |
p. 2785-2789
5 p.
|
artikel
|
| 36 |
Dispersion improvement of unipolar resistive switching Ni/Cu x O/Cu device by bipolar operation method
|
Liu, Chih-Yi
|
|
2010
|
284-285 |
12 |
p. 2504-2507
4 p.
|
artikel
|
| 37 |
Dynamical modeling of transport in MOS structures containing silicon nanocrystals for memory applications
|
Carreras, Josep
|
|
2008
|
284-285 |
12 |
p. 2378-2381
4 p.
|
artikel
|
| 38 |
Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics
|
Kuzum, Duygu
|
|
2011
|
284-285 |
12 |
p. 3428-3431
4 p.
|
artikel
|
| 39 |
Effect of organic acids on copper chemical mechanical polishing
|
Wu, Yung-Fu
|
|
2007
|
284-285 |
12 |
p. 2790-2798
9 p.
|
artikel
|
| 40 |
Effects of the Ag content on the geometrical and electrical characteristics of the screen-printed etched gate electrodes of OTFTs using Ag ink
|
Lee, Mi-Young
|
|
2010
|
284-285 |
12 |
p. 2577-2581
5 p.
|
artikel
|
| 41 |
Electrical analysis of organic dye-based MIS Schottky contacts
|
Güllü, Ö.
|
|
2010
|
284-285 |
12 |
p. 2482-2487
6 p.
|
artikel
|
| 42 |
Electrical properties of Pb(Zr,Ti)O3 films prepared on ITO glass
|
Hwang, Hyun-Suk
|
|
2008
|
284-285 |
12 |
p. 2456-2458
3 p.
|
artikel
|
| 43 |
Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8
|
Vaju, C.
|
|
2008
|
284-285 |
12 |
p. 2430-2433
4 p.
|
artikel
|
| 44 |
Electrochemical polishing of ITO films
|
Wu, Yung-Fu
|
|
2010
|
284-285 |
12 |
p. 2549-2554
6 p.
|
artikel
|
| 45 |
Electrodynamically actuated on-chip flow cytometry with low shear stress for electro-osmosis based sorting using low conductive medium
|
Valagerahally Puttaswamy, Srinivasu
|
|
2010
|
284-285 |
12 |
p. 2582-2591
10 p.
|
artikel
|
| 46 |
Electromigration in electroplated Cu(Ag) alloy thin films investigated by means of single damascene Blech structures
|
Strehle, S.
|
|
2009
|
284-285 |
12 |
p. 2396-2403
8 p.
|
artikel
|
| 47 |
Electronic structure and magnetic properties of Ca3Co2O6 cobaltites: Intrachain magnetic ordering
|
Stoeffler, Daniel
|
|
2008
|
284-285 |
12 |
p. 2451-2455
5 p.
|
artikel
|
| 48 |
Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals
|
Badylevich, M.
|
|
2008
|
284-285 |
12 |
p. 2382-2384
3 p.
|
artikel
|
| 49 |
Electronic structure of Pt/HfO2 interface with oxygen vacancy
|
Cho, Eunae
|
|
2011
|
284-285 |
12 |
p. 3407-3410
4 p.
|
artikel
|
| 50 |
Erratum to: “Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions” [Microelect. Eng. 83 (2006) 362–370]
|
Kim, Nam-Hoon
|
|
2007
|
284-285 |
12 |
p. 2927-
1 p.
|
artikel
|
| 51 |
Evaluation of Cu-bumps with lead-free solders for flip-chip package applications
|
Lin, Kung-Liang
|
|
2009
|
284-285 |
12 |
p. 2392-2395
4 p.
|
artikel
|
| 52 |
Evaluation of electrical and optical properties of indium tin oxide thin film using chemical mechanical polishing technique
|
Seo, Yong-Jin
|
|
2007
|
284-285 |
12 |
p. 2896-2900
5 p.
|
artikel
|
| 53 |
Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories
|
Molas, G.
|
|
2008
|
284-285 |
12 |
p. 2393-2399
7 p.
|
artikel
|
| 54 |
Experimental study on ultrasonic stress relief for cured SU-8 photoresist layer
|
Du, Liqun
|
|
2010
|
284-285 |
12 |
p. 2555-2560
6 p.
|
artikel
|
| 55 |
Extraction of electronic parameters of Schottky diode based on an organic Orcein
|
Aydoğan, Şakir
|
|
2010
|
284-285 |
12 |
p. 2525-2530
6 p.
|
artikel
|
| 56 |
Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures
|
Yoon, Sung-Min
|
|
2008
|
284-285 |
12 |
p. 2334-2337
4 p.
|
artikel
|
| 57 |
Fabrication and electrical performance of high-density arrays of nanometric silicon tips
|
Carvalho, Edson J.
|
|
2010
|
284-285 |
12 |
p. 2544-2548
5 p.
|
artikel
|
| 58 |
Fabrication of cantilever arrays with nano-aperture hollow tips for parallel microplasma etching
|
Xiang, Wei Wei
|
|
2010
|
284-285 |
12 |
p. 2475-2481
7 p.
|
artikel
|
| 59 |
Fabrication of large-area conductive patterns on ferrite substrate by laser micro-cladding
|
Cai, Zhixiang
|
|
2010
|
284-285 |
12 |
p. 2495-2498
4 p.
|
artikel
|
| 60 |
Fabrication of microfluidic channels derived from a UV/thermally cured preceramic polymer via a soft lithographic technique
|
Lee, Hong-Joo
|
|
2007
|
284-285 |
12 |
p. 2892-2895
4 p.
|
artikel
|
| 61 |
Fabrication of SiO2 microdisk arrays for optics and light trapping experiments
|
Saraf, L.V.
|
|
2007
|
284-285 |
12 |
p. 2799-2803
5 p.
|
artikel
|
| 62 |
Fast backscattering parameter determination in e-beam lithography with a modified doughnut test
|
Keil, Katja
|
|
2009
|
284-285 |
12 |
p. 2408-2411
4 p.
|
artikel
|
| 63 |
First-principles study of GaAs(001)-β2(2×4) surface oxidation
|
Wang, Weichao
|
|
2011
|
284-285 |
12 |
p. 3419-3423
5 p.
|
artikel
|
| 64 |
Formation of aluminum tunnel pits arrayed using SU-8 masks with UV-assisted thermal imprint lithography
|
Jang, Joo-Hee
|
|
2010
|
284-285 |
12 |
p. 2610-2613
4 p.
|
artikel
|
| 65 |
Growth ambient on memory characteristics in Au nanoclusters embedded in high-k dielectric as novel non-volatile memory
|
Chan, K.C.
|
|
2008
|
284-285 |
12 |
p. 2385-2387
3 p.
|
artikel
|
| 66 |
Harmonics suppression investigations of pHEMT single-pole-single-throw switches using multi-gate structures
|
Chiu, Hsien-Chin
|
|
2010
|
284-285 |
12 |
p. 2592-2595
4 p.
|
artikel
|
| 67 |
High density, low leakage Back-End 3D capacitors for mixed signals applications
|
Detalle, M.
|
|
2010
|
284-285 |
12 |
p. 2571-2576
6 p.
|
artikel
|
| 68 |
Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region
|
Zhang, Jinping
|
|
2007
|
284-285 |
12 |
p. 2888-2891
4 p.
|
artikel
|
| 69 |
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
|
Kuo, Chien-I
|
|
2010
|
284-285 |
12 |
p. 2625-2628
4 p.
|
artikel
|
| 70 |
Improvement of Ni/Si/4H-SiC ohmic contacts by VLS grown sub-contact layer
|
Macháč, Petr
|
|
2010
|
284-285 |
12 |
p. 2499-2503
5 p.
|
artikel
|
| 71 |
Improvement of PMMA electron-beam lithography performance in metal liftoff through a poly-imide bi-layer system
|
Yaghmaie, F.
|
|
2010
|
284-285 |
12 |
p. 2629-2632
4 p.
|
artikel
|
| 72 |
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing
|
Tsoutsou, D.
|
|
2008
|
284-285 |
12 |
p. 2411-2413
3 p.
|
artikel
|
| 73 |
Inside Front Cover - Editorial Board
|
|
|
2009
|
284-285 |
12 |
p. IFC-
1 p.
|
artikel
|
| 74 |
Inside Front Cover - Editorial Board
|
|
|
2008
|
284-285 |
12 |
p. IFC-
1 p.
|
artikel
|
| 75 |
Inside Front Cover - Editorial Board
|
|
|
2007
|
284-285 |
12 |
p. IFC-
1 p.
|
artikel
|
| 76 |
Inside Front Cover - Editorial Board
|
|
|
2010
|
284-285 |
12 |
p. IFC-
1 p.
|
artikel
|
| 77 |
Inside Front Cover - Editorial Board
|
|
|
2011
|
284-285 |
12 |
p. IFC-
1 p.
|
artikel
|
| 78 |
Integration of Hf x Ta y N metal gate with SiO2 and HfO x N y gate dielectrics for MOS device applications
|
Yang, Chang-Ta
|
|
2007
|
284-285 |
12 |
p. 2916-2920
5 p.
|
artikel
|
| 79 |
Integration of organic based Schottky junctions for crossbar non-volatile memory applications
|
Katsia, E.
|
|
2008
|
284-285 |
12 |
p. 2439-2441
3 p.
|
artikel
|
| 80 |
Interpretation of texture changes during self-annealing of electroplated copper
|
Zhang, W.Q.
|
|
2010
|
284-285 |
12 |
p. 2488-2494
7 p.
|
artikel
|
| 81 |
Investigation of pattern coating on mould roller in roller-reversal imprint process
|
Jiang, Weitao
|
|
2009
|
284-285 |
12 |
p. 2412-2416
5 p.
|
artikel
|
| 82 |
Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor
|
Kaynak, C. Baristiran
|
|
2010
|
284-285 |
12 |
p. 2561-2564
4 p.
|
artikel
|
| 83 |
KFM detection of charges injected by AFM into a thin SiO2 layer containing Si nanocrystals
|
Dumas, C.
|
|
2008
|
284-285 |
12 |
p. 2358-2361
4 p.
|
artikel
|
| 84 |
Large area pattern replication by nanoimprint lithography for LCD–TFT application
|
Kim, Jeong-Gil
|
|
2009
|
284-285 |
12 |
p. 2427-2431
5 p.
|
artikel
|
| 85 |
Lateral SbTeN based multi-layer phase change memory for multi-state storage
|
Yin, You
|
|
2007
|
284-285 |
12 |
p. 2901-2906
6 p.
|
artikel
|
| 86 |
Low-temperature embossing technique for fabrication of large-area polymeric microlens array with supercritical carbon dioxide
|
Wu, Jing-Tang
|
|
2010
|
284-285 |
12 |
p. 2620-2624
5 p.
|
artikel
|
| 87 |
Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors
|
Oxland, Richard K.
|
|
2009
|
284-285 |
12 |
p. 2432-2436
5 p.
|
artikel
|
| 88 |
Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system
|
Kim, Eunkyeom
|
|
2008
|
284-285 |
12 |
p. 2370-2373
4 p.
|
artikel
|
| 89 |
Microfabrication of a nickel mold insert by a modified deep X-ray lithography process and its application to hot embossing
|
Lee, Bong-Kee
|
|
2010
|
284-285 |
12 |
p. 2449-2455
7 p.
|
artikel
|
| 90 |
Microstructure and electric property of MgO/Fe/MgO tri-layer films forming a nano-granular system
|
Arita, M.
|
|
2008
|
284-285 |
12 |
p. 2445-2450
6 p.
|
artikel
|
| 91 |
Modeling the behavior of charge carrier mobility with temperature in thin-film polymeric transistors
|
Estrada, M.
|
|
2010
|
284-285 |
12 |
p. 2565-2570
6 p.
|
artikel
|
| 92 |
MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
|
Poggi, A.
|
|
2007
|
284-285 |
12 |
p. 2804-2809
6 p.
|
artikel
|
| 93 |
Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies
|
Pinto, S.R.C.
|
|
2010
|
284-285 |
12 |
p. 2508-2512
5 p.
|
artikel
|
| 94 |
Multilevel charge storage in Si nanocrystals arranged in double-dot-layers within SiO2
|
Theodoropoulou, M.
|
|
2008
|
284-285 |
12 |
p. 2362-2365
4 p.
|
artikel
|
| 95 |
New materials of spin-on organic hardmask for sub-70nm devices
|
Choi, Sang-Jun
|
|
2007
|
284-285 |
12 |
p. 2832-2836
5 p.
|
artikel
|
| 96 |
New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
|
Huby, N.
|
|
2008
|
284-285 |
12 |
p. 2442-2444
3 p.
|
artikel
|
| 97 |
Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes
|
Kim, Eunkyeom
|
|
2008
|
284-285 |
12 |
p. 2366-2369
4 p.
|
artikel
|
| 98 |
Optical proximity correction for a versatile LCD based direct write maskless photoplotter
|
Kessels, M.V.
|
|
2009
|
284-285 |
12 |
p. 2385-2391
7 p.
|
artikel
|
| 99 |
Organic memory cells based on the switching by nanoparticles containing thin films
|
Lee, Seok Jae
|
|
2008
|
284-285 |
12 |
p. 2388-2392
5 p.
|
artikel
|
| 100 |
Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors
|
Miyata, Noriyuki
|
|
2011
|
284-285 |
12 |
p. 3459-3461
3 p.
|
artikel
|
| 101 |
Parametric optimization of micro-contact printing based thermal transfer of electrospun nanofibers
|
Liu, Jun
|
|
2010
|
284-285 |
12 |
p. 2513-2517
5 p.
|
artikel
|
| 102 |
Phase change materials and their application to random access memory technology
|
Raoux, Simone
|
|
2008
|
284-285 |
12 |
p. 2330-2333
4 p.
|
artikel
|
| 103 |
Photoconductivity of Hf-based binary metal oxides
|
Shamuilia, S.
|
|
2008
|
284-285 |
12 |
p. 2400-2402
3 p.
|
artikel
|
| 104 |
Polishing behaviors of single crystalline ceria abrasives on silicon dioxide and silicon nitride CMP
|
Oh, Myoung-Hwan
|
|
2010
|
284-285 |
12 |
p. 2633-2637
5 p.
|
artikel
|
| 105 |
Porous alumina nano-membranes: Soft replica molding for large area UV-nanoimprint lithography
|
Zhou, Weimin
|
|
2009
|
284-285 |
12 |
p. 2375-2380
6 p.
|
artikel
|
| 106 |
Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs
|
Peng, M.Z.
|
|
2010
|
284-285 |
12 |
p. 2638-2641
4 p.
|
artikel
|
| 107 |
Preface to Symposium H: Materials and emerging technologies for non-volatile-memory devices
|
Wouters, Drik J.
|
|
2008
|
284-285 |
12 |
p. 2329-
1 p.
|
artikel
|
| 108 |
Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications
|
Lee, Seung-Yun
|
|
2008
|
284-285 |
12 |
p. 2342-2345
4 p.
|
artikel
|
| 109 |
Replication of high ordered nano-sphere array by nanoimprint lithography
|
Hong, Sung-Hoon
|
|
2009
|
284-285 |
12 |
p. 2423-2426
4 p.
|
artikel
|
| 110 |
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition
|
Spiga, S.
|
|
2008
|
284-285 |
12 |
p. 2414-2419
6 p.
|
artikel
|
| 111 |
Resistive switching effects of HfO2 high-k dielectric
|
Chan, M.Y.
|
|
2008
|
284-285 |
12 |
p. 2420-2424
5 p.
|
artikel
|
| 112 |
Reviewers Acknowledgment
|
|
|
2011
|
284-285 |
12 |
p. I-III
nvt p.
|
artikel
|
| 113 |
Silicon nanowire NVM cell using high-k dielectric charge storage layer
|
Zhu, X.
|
|
2008
|
284-285 |
12 |
p. 2403-2405
3 p.
|
artikel
|
| 114 |
Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
|
Remashan, K.
|
|
2007
|
284-285 |
12 |
p. 2907-2915
9 p.
|
artikel
|
| 115 |
Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications
|
Laha, Apurba
|
|
2008
|
284-285 |
12 |
p. 2350-2353
4 p.
|
artikel
|
| 116 |
Some issues in advanced CMOS gate stack performance and reliability
|
Li, Ming-Fu
|
|
2011
|
284-285 |
12 |
p. 3377-3384
8 p.
|
artikel
|
| 117 |
Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications
|
Kranti, Abhinav
|
|
2007
|
284-285 |
12 |
p. 2775-2784
10 p.
|
artikel
|
| 118 |
Stabilized filling simulation of microchip encapsulation process
|
Wang, Hui
|
|
2010
|
284-285 |
12 |
p. 2602-2609
8 p.
|
artikel
|
| 119 |
Stackable nonvolatile memory with ultra thin polysilicon film and low-leakage (Ti,Dy) x O y for low processing temperature and low operating voltages
|
Lee, Jaegoo
|
|
2011
|
284-285 |
12 |
p. 3462-3465
4 p.
|
artikel
|
| 120 |
Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior
|
Wirbeleit, Frank
|
|
2010
|
284-285 |
12 |
p. 2456-2462
7 p.
|
artikel
|
| 121 |
Statistical constraints in nanocrystal memory scaling
|
Gusmeroli, Riccardo
|
|
2007
|
284-285 |
12 |
p. 2869-2874
6 p.
|
artikel
|
| 122 |
Study of interaction between silicon surfaces in dilute ammonia peroxide mixtures (APM) and their components using atomic force microscope (AFM)
|
Siddiqui, S.
|
|
2011
|
284-285 |
12 |
p. 3442-3447
6 p.
|
artikel
|
| 123 |
Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)
|
Lamperti, A.
|
|
2008
|
284-285 |
12 |
p. 2425-2429
5 p.
|
artikel
|
| 124 |
Table of Contents
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|
|
2008
|
284-285 |
12 |
p. iii-iv
nvt p.
|
artikel
|
| 125 |
Table of Contents
|
|
|
2011
|
284-285 |
12 |
p. v-vi
nvt p.
|
artikel
|
| 126 |
The dry etching of TEOS oxide for poly-Si cantilevers in supercritical CO2
|
Jung, Jae Mok
|
|
2011
|
284-285 |
12 |
p. 3448-3451
4 p.
|
artikel
|
| 127 |
The effect of pulsed laser annealing on the nickel silicide formation
|
Chen, Hou-Yu
|
|
2010
|
284-285 |
12 |
p. 2540-2543
4 p.
|
artikel
|
| 128 |
The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films
|
Xie, Qi
|
|
2010
|
284-285 |
12 |
p. 2535-2539
5 p.
|
artikel
|
| 129 |
The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts
|
Aydın, M.E.
|
|
2007
|
284-285 |
12 |
p. 2875-2882
8 p.
|
artikel
|
| 130 |
The properties of high-k gate dielectric films deposited on HRSOI
|
Cheng, Xinhong
|
|
2009
|
284-285 |
12 |
p. 2404-2407
4 p.
|
artikel
|
| 131 |
Thermal characteristics evaluation for board-level high performance flip-chip package equipped with vapor chamber as heat spreader
|
Wang, Tong Hong
|
|
2010
|
284-285 |
12 |
p. 2463-2467
5 p.
|
artikel
|
| 132 |
Thermal stress effects of Ge2Sb2Te5 phase change material: Irreversible modification with Ti adhesion layers and segregation of Te
|
Chen, K.N.
|
|
2008
|
284-285 |
12 |
p. 2346-2349
4 p.
|
artikel
|
| 133 |
Three-dimensional optical data storage through multi-photon confocal microscopy and imaging
|
Dallari, William
|
|
2011
|
284-285 |
12 |
p. 3466-3469
4 p.
|
artikel
|
| 134 |
Tuning the dielectric properties of hafnium silicate films
|
Fachmann, Christian
|
|
2007
|
284-285 |
12 |
p. 2883-2887
5 p.
|
artikel
|
| 135 |
Vertically stacked non-volatile memory devices – material considerations
|
Godlewski, M.
|
|
2008
|
284-285 |
12 |
p. 2434-2438
5 p.
|
artikel
|
| 136 |
Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories
|
Golubović, D.S.
|
|
2007
|
284-285 |
12 |
p. 2921-2926
6 p.
|
artikel
|
| 137 |
Water management on semiconductor surfaces
|
Le Tiec, Y.
|
|
2011
|
284-285 |
12 |
p. 3432-3436
5 p.
|
artikel
|
| 138 |
Wavelet monitoring of spatial surface roughness for plasma diagnosis
|
Kim, Byungwhan
|
|
2007
|
284-285 |
12 |
p. 2810-2816
7 p.
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