| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An approach based on particle swarm computation to study the electron mobility in wurtzite GaN
|
Djeffal, F.
|
|
|
40 |
2 |
p. 357-359
|
artikel
|
| 2 |
Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers
|
Arnaudov, B.
|
|
|
40 |
2 |
p. 346-348
|
artikel
|
| 3 |
Biphasic GaN nanowires: Growth mechanism and properties
|
Halpern, J.B.
|
|
|
40 |
2 |
p. 316-318
|
artikel
|
| 4 |
Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry
|
Wagner, M.R.
|
|
|
40 |
2 |
p. 289-292
|
artikel
|
| 5 |
Bright CdSe quantum dot inserted in single ZnSe nanowires
|
Tribu, A.
|
|
|
40 |
2 |
p. 253-255
|
artikel
|
| 6 |
Carbothermal reduction growth of ZnO nanostructures on sapphire—comparisons between graphite and activated charcoal powders
|
Biswas, M.
|
|
|
40 |
2 |
p. 259-261
|
artikel
|
| 7 |
Characterization of ZnO and ZnO:Al films deposited by MOCVD on oriented and amorphous substrates
|
Fragala, Maria Elena
|
|
|
40 |
2 |
p. 381-384
|
artikel
|
| 8 |
Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures
|
Kudrawiec, R.
|
|
|
40 |
2 |
p. 370-372
|
artikel
|
| 9 |
Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions
|
Zhu, J.J.
|
|
|
40 |
2 |
p. 232-235
|
artikel
|
| 10 |
Cubic group-III nitride-based nanostructures—basics and applications in optoelectronics
|
As, D.J.
|
|
|
40 |
2 |
p. 204-209
|
artikel
|
| 11 |
Deep-level defects study of arsenic-implanted ZnO single crystal
|
Zhu, C.Y.
|
|
|
40 |
2 |
p. 286-288
|
artikel
|
| 12 |
Editorial board
|
|
|
|
40 |
2 |
p. i
|
artikel
|
| 13 |
Effect of annealing on Zn1− x Co x O thin films prepared by electrodeposition
|
El Manouni, A.
|
|
|
40 |
2 |
p. 268-271
|
artikel
|
| 14 |
Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals
|
Dierre, B.
|
|
|
40 |
2 |
p. 262-264
|
artikel
|
| 15 |
Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes
|
Rigutti, L.
|
|
|
40 |
2 |
p. 331-332
|
artikel
|
| 16 |
Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique
|
Belghazi, Y.
|
|
|
40 |
2 |
p. 265-267
|
artikel
|
| 17 |
Electrodepositing Zn x Mn y O z alloys from zinc oxide to manganese oxide
|
Mollar, M.
|
|
|
40 |
2 |
p. 276-279
|
artikel
|
| 18 |
Electron field emission from ZnO self-organized nanostructures and doped ZnO:Ga nanostructured films
|
Karpyna, V.A.
|
|
|
40 |
2 |
p. 229-231
|
artikel
|
| 19 |
Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations
|
Leconte, S.
|
|
|
40 |
2 |
p. 339-341
|
artikel
|
| 20 |
Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes
|
de Vasconcellos, S. Michaelis
|
|
|
40 |
2 |
p. 215-217
|
artikel
|
| 21 |
Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence
|
Lagarde, D.
|
|
|
40 |
2 |
p. 328-330
|
artikel
|
| 22 |
GaN membrane-supported UV photodetectors manufactured using nanolithographic processes
|
Müller, A.
|
|
|
40 |
2 |
p. 319-321
|
artikel
|
| 23 |
Growth and characterization of ZnO nanowires on p-type GaN
|
Robin, I.C.
|
|
|
40 |
2 |
p. 250-252
|
artikel
|
| 24 |
Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates
|
Reiser, A.
|
|
|
40 |
2 |
p. 306-308
|
artikel
|
| 25 |
Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling
|
Touré, A.
|
|
|
40 |
2 |
p. 363-366
|
artikel
|
| 26 |
Influence of anisotropic strain on excitonic transitions in a-plane GaN films
|
Buchheim, C.
|
|
|
40 |
2 |
p. 322-324
|
artikel
|
| 27 |
Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped Al x Ga1− x N (0⩽x⩽1) alloys
|
Peres, M.
|
|
|
40 |
2 |
p. 377-380
|
artikel
|
| 28 |
Insulating substrates for cubic GaN-based HFETs
|
Tschumak, E.
|
|
|
40 |
2 |
p. 367-369
|
artikel
|
| 29 |
Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor
|
Behrends, A.
|
|
|
40 |
2 |
p. 280-282
|
artikel
|
| 30 |
Investigation on doping behavior of copper in ZnO thin film
|
Kim, Gun Hee
|
|
|
40 |
2 |
p. 272-275
|
artikel
|
| 31 |
Investigations of photo-assisted conductive atomic force microscopy on III-nitrides
|
Chang, Mao-Nan
|
|
|
40 |
2 |
p. 353-356
|
artikel
|
| 32 |
Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions
|
Pawlis, A.
|
|
|
40 |
2 |
p. 256-258
|
artikel
|
| 33 |
Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates
|
Andersson, T.G.
|
|
|
40 |
2 |
p. 360-362
|
artikel
|
| 34 |
Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications
|
Fündling, S.
|
|
|
40 |
2 |
p. 333-335
|
artikel
|
| 35 |
Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs
|
Panfilova, M.
|
|
|
40 |
2 |
p. 221-223
|
artikel
|
| 36 |
Microstructure analysis in strained-InGaN/GaN multiple quantum wells
|
Lei, Huaping
|
|
|
40 |
2 |
p. 342-345
|
artikel
|
| 37 |
Morphology and growth mechanism of aligned ZnO nanorods grown by catalyst-free MOCVD
|
Rosina, M.
|
|
|
40 |
2 |
p. 242-245
|
artikel
|
| 38 |
Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5μm
|
Naranjo, F.B.
|
|
|
40 |
2 |
p. 349-352
|
artikel
|
| 39 |
Optical and electrical characterizations of vertically integrated ZnO nanowires
|
Latu-Romain, E.
|
|
|
40 |
2 |
p. 224-228
|
artikel
|
| 40 |
Optical properties of ZnO thin films prepared by sol–gel process
|
Petersen, J.
|
|
|
40 |
2 |
p. 239-241
|
artikel
|
| 41 |
PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire
|
Lahourcade, L.
|
|
|
40 |
2 |
p. 325-327
|
artikel
|
| 42 |
PL study of oxygen defect formation in ZnO nanorods
|
Chandrinou, C.
|
|
|
40 |
2 |
p. 296-298
|
artikel
|
| 43 |
Role of surface oxygen vacancies in photoluminescence of tin dioxide nanobelts
|
Trani, F.
|
|
|
40 |
2 |
p. 236-238
|
artikel
|
| 44 |
Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics
|
Kandaswamy, P.K.
|
|
|
40 |
2 |
p. 336-338
|
artikel
|
| 45 |
Structural and magnetic study of hard–soft systems with ZnO barrier grown by pulsed laser deposition
|
Bieber, H.
|
|
|
40 |
2 |
p. 246-249
|
artikel
|
| 46 |
Structural and optical properties on thulium-doped LHPG-grown Ta2O5 fibres
|
Macatrão, M.
|
|
|
40 |
2 |
p. 309-312
|
artikel
|
| 47 |
Studies of defect states of ZnO thin films under different annealing conditions
|
Song, Hooyoung
|
|
|
40 |
2 |
p. 313-315
|
artikel
|
| 48 |
Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition
|
Kim, Jae-Hoon
|
|
|
40 |
2 |
p. 283-285
|
artikel
|
| 49 |
Surface planarization of ZnO thin film for optoelectronic applications
|
Lee, Woo-Sun
|
|
|
40 |
2 |
p. 299-302
|
artikel
|
| 50 |
Synthesis of GaN nanowires and nanorods via self-growth mode control
|
Kang, S.M.
|
|
|
40 |
2 |
p. 373-376
|
artikel
|
| 51 |
The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique
|
Krajewski, T.
|
|
|
40 |
2 |
p. 293-295
|
artikel
|
| 52 |
The role of stacking faults and their associated 0.13ev acceptor state in doped and undoped ZnO layers and nanostructures
|
Thonke, K.
|
|
|
40 |
2 |
p. 210-214
|
artikel
|
| 53 |
Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells
|
Kabir, A.
|
|
|
40 |
2 |
p. 303-305
|
artikel
|
| 54 |
Wide band gap semiconductor nanostructures for optoelectronic applications
|
Lischka, K.
|
|
|
40 |
2 |
p. 203
|
artikel
|
| 55 |
ZnO clusters: Laser ablation production and time-of-flight mass spectroscopic study
|
Dmytruk, A.
|
|
|
40 |
2 |
p. 218-220
|
artikel
|
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