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                             55 results found
no title author magazine year volume issue page(s) type
1 An approach based on particle swarm computation to study the electron mobility in wurtzite GaN Djeffal, F.
40 2 p. 357-359
 article
2 Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers Arnaudov, B.
40 2 p. 346-348
 article
3 Biphasic GaN nanowires: Growth mechanism and properties Halpern, J.B.
40 2 p. 316-318
 article
4 Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry Wagner, M.R.
40 2 p. 289-292
 article
5 Bright CdSe quantum dot inserted in single ZnSe nanowires Tribu, A.
40 2 p. 253-255
 article
6 Carbothermal reduction growth of ZnO nanostructures on sapphire—comparisons between graphite and activated charcoal powders Biswas, M.
40 2 p. 259-261
 article
7 Characterization of ZnO and ZnO:Al films deposited by MOCVD on oriented and amorphous substrates Fragala, Maria Elena
40 2 p. 381-384
 article
8 Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures Kudrawiec, R.
40 2 p. 370-372
 article
9 Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions Zhu, J.J.
40 2 p. 232-235
 article
10 Cubic group-III nitride-based nanostructures—basics and applications in optoelectronics As, D.J.
40 2 p. 204-209
 article
11 Deep-level defects study of arsenic-implanted ZnO single crystal Zhu, C.Y.
40 2 p. 286-288
 article
12 Editorial board
40 2 p. i
 article
13 Effect of annealing on Zn1− x Co x O thin films prepared by electrodeposition El Manouni, A.
40 2 p. 268-271
 article
14 Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals Dierre, B.
40 2 p. 262-264
 article
15 Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes Rigutti, L.
40 2 p. 331-332
 article
16 Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique Belghazi, Y.
40 2 p. 265-267
 article
17 Electrodepositing Zn x Mn y O z alloys from zinc oxide to manganese oxide Mollar, M.
40 2 p. 276-279
 article
18 Electron field emission from ZnO self-organized nanostructures and doped ZnO:Ga nanostructured films Karpyna, V.A.
40 2 p. 229-231
 article
19 Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations Leconte, S.
40 2 p. 339-341
 article
20 Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes de Vasconcellos, S. Michaelis
40 2 p. 215-217
 article
21 Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence Lagarde, D.
40 2 p. 328-330
 article
22 GaN membrane-supported UV photodetectors manufactured using nanolithographic processes Müller, A.
40 2 p. 319-321
 article
23 Growth and characterization of ZnO nanowires on p-type GaN Robin, I.C.
40 2 p. 250-252
 article
24 Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates Reiser, A.
40 2 p. 306-308
 article
25 Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling Touré, A.
40 2 p. 363-366
 article
26 Influence of anisotropic strain on excitonic transitions in a-plane GaN films Buchheim, C.
40 2 p. 322-324
 article
27 Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped Al x Ga1− x N (0⩽x⩽1) alloys Peres, M.
40 2 p. 377-380
 article
28 Insulating substrates for cubic GaN-based HFETs Tschumak, E.
40 2 p. 367-369
 article
29 Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor Behrends, A.
40 2 p. 280-282
 article
30 Investigation on doping behavior of copper in ZnO thin film Kim, Gun Hee
40 2 p. 272-275
 article
31 Investigations of photo-assisted conductive atomic force microscopy on III-nitrides Chang, Mao-Nan
40 2 p. 353-356
 article
32 Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions Pawlis, A.
40 2 p. 256-258
 article
33 Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates Andersson, T.G.
40 2 p. 360-362
 article
34 Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications Fündling, S.
40 2 p. 333-335
 article
35 Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs Panfilova, M.
40 2 p. 221-223
 article
36 Microstructure analysis in strained-InGaN/GaN multiple quantum wells Lei, Huaping
40 2 p. 342-345
 article
37 Morphology and growth mechanism of aligned ZnO nanorods grown by catalyst-free MOCVD Rosina, M.
40 2 p. 242-245
 article
38 Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5μm Naranjo, F.B.
40 2 p. 349-352
 article
39 Optical and electrical characterizations of vertically integrated ZnO nanowires Latu-Romain, E.
40 2 p. 224-228
 article
40 Optical properties of ZnO thin films prepared by sol–gel process Petersen, J.
40 2 p. 239-241
 article
41 PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire Lahourcade, L.
40 2 p. 325-327
 article
42 PL study of oxygen defect formation in ZnO nanorods Chandrinou, C.
40 2 p. 296-298
 article
43 Role of surface oxygen vacancies in photoluminescence of tin dioxide nanobelts Trani, F.
40 2 p. 236-238
 article
44 Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics Kandaswamy, P.K.
40 2 p. 336-338
 article
45 Structural and magnetic study of hard–soft systems with ZnO barrier grown by pulsed laser deposition Bieber, H.
40 2 p. 246-249
 article
46 Structural and optical properties on thulium-doped LHPG-grown Ta2O5 fibres Macatrão, M.
40 2 p. 309-312
 article
47 Studies of defect states of ZnO thin films under different annealing conditions Song, Hooyoung
40 2 p. 313-315
 article
48 Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition Kim, Jae-Hoon
40 2 p. 283-285
 article
49 Surface planarization of ZnO thin film for optoelectronic applications Lee, Woo-Sun
40 2 p. 299-302
 article
50 Synthesis of GaN nanowires and nanorods via self-growth mode control Kang, S.M.
40 2 p. 373-376
 article
51 The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique Krajewski, T.
40 2 p. 293-295
 article
52 The role of stacking faults and their associated 0.13ev acceptor state in doped and undoped ZnO layers and nanostructures Thonke, K.
40 2 p. 210-214
 article
53 Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells Kabir, A.
40 2 p. 303-305
 article
54 Wide band gap semiconductor nanostructures for optoelectronic applications Lischka, K.
40 2 p. 203
 article
55 ZnO clusters: Laser ablation production and time-of-flight mass spectroscopic study Dmytruk, A.
40 2 p. 218-220
 article
                             55 results found
 
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