| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A disciplined approach to the development of platform architectures
|
August, D.I.
|
|
|
33 |
11 |
p. 881-890
|
artikel
|
| 2 |
An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator
|
Jevtić, Milan M
|
|
|
33 |
11 |
p. 955-960
|
artikel
|
| 3 |
Analysis and optimization of the impact of channel resistance on CMOS LNA noise performance
|
Chen, Jiwei
|
|
|
33 |
11 |
p. 1027-1031
|
artikel
|
| 4 |
Application-specific multiprocessor Systems-on-Chip
|
Jerraya, Ahmed Amine
|
|
|
33 |
11 |
p. 891-898
|
artikel
|
| 5 |
Characterization of ideal and disordered InAS/GaSb heterostructures for infrared technologies
|
Hosseini, S.A.
|
|
|
33 |
11 |
p. 935-943
|
artikel
|
| 6 |
Dual damascene advanced interconnects: new copper seed layer enhancement process metrology using ion chromatography
|
Lee, Shih-Wei
|
|
|
33 |
11 |
p. 945-953
|
artikel
|
| 7 |
Effects of burn-in stressing on radiation response of power VDMOSFETs
|
Stojadinovic, N
|
|
|
33 |
11 |
p. 899-905
|
artikel
|
| 8 |
Evaluation of techniques for characterizing virgin and γ-irradiated power VDMOSFETs
|
Mileusnić, Saša
|
|
|
33 |
11 |
p. 921-928
|
artikel
|
| 9 |
IFC-editorial board
|
|
|
|
33 |
11 |
p. i
|
artikel
|
| 10 |
Impact of technology scaling on thermal behavior of leakage current in sub-quarter micron MOSFETs: perspective of low temperature current testing
|
Semenov, Oleg
|
|
|
33 |
11 |
p. 985-994
|
artikel
|
| 11 |
Influence of metal properties and photodiode parameters on the spectral response of n-GaN Schottky photodiode
|
Touzi, C
|
|
|
33 |
11 |
p. 961-965
|
artikel
|
| 12 |
Influence of oxidation temperature on the microstructure and electrical properties of Ta2O5 on Si
|
Atanassova, E
|
|
|
33 |
11 |
p. 907-920
|
artikel
|
| 13 |
Introduction in space technologies, processing and applications of ULSI/WSI/3D-WSI on functional 3D nano- and optoelectronic elements
|
Bubennikov, Alexandre N
|
|
|
33 |
11 |
p. 1011-1019
|
artikel
|
| 14 |
Model generation of the silicon–germanium (Si1−x Ge x ) bipolar inversion channel field effect transistor utilizing a two-dimensional device simulator
|
Sharer, D.
|
|
|
33 |
11 |
p. 975-984
|
artikel
|
| 15 |
Modelling interconnects with surface roughness
|
Patrikar, Rajendra M
|
|
|
33 |
11 |
p. 929-934
|
artikel
|
| 16 |
Optical properties of PECVD dielectric thin films: thickness and deposition method dependence
|
Zhou, H
|
|
|
33 |
11 |
p. 999-1004
|
artikel
|
| 17 |
Practical study of idle tones in 2nd-order bandpass ΣΔ modulators
|
de la Rosa, José M
|
|
|
33 |
11 |
p. 1005-1009
|
artikel
|
| 18 |
Properties of low-k SiCOH films prepared by plasma-enhanced chemical vapor deposition using trimethylsilane
|
Narayanan, B
|
|
|
33 |
11 |
p. 971-974
|
artikel
|
| 19 |
Selective electroplating of P-type and N-type areas on semiconductor surfaces
|
Karmalkar, S
|
|
|
33 |
11 |
p. 967-970
|
artikel
|
| 20 |
Silicon effect on GaN surface morphology
|
Benzarti, Z
|
|
|
33 |
11 |
p. 995-998
|
artikel
|
| 21 |
Simulation of vertical merged MOS elements with optical power supply
|
Bubennikov, Alexandre N
|
|
|
33 |
11 |
p. 1021-1025
|
artikel
|
| 22 |
Special section on SASIMI2001
|
Nakamura, Yukihiro
|
|
|
33 |
11 |
p. 873-874
|
artikel
|
| 23 |
Trend of system level design and an approach to C-based design
|
Kambe, Takashi
|
|
|
33 |
11 |
p. 875-880
|
artikel
|
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