| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of MOS processes for VLSI. Part I
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|
16 |
5 |
p. 47
|
artikel
|
| 2 |
Advances in microelectronics packaging and interconnection technologies —towards the new generation of hybrid microelectronics
|
Sinnadurai, Nihal
|
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|
16 |
5 |
p. 31-43
|
artikel
|
| 3 |
Air and nitrogen-fireable multilayer systems: materials and performance characteristics. Part II
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16 |
5 |
p. 51
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artikel
|
| 4 |
Air and nitrogen-fireable multilayer systems: materials and performance characteristics. Part II
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16 |
5 |
p. 51
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artikel
|
| 5 |
Ammonium persulfate as a stripping and cleaning oxidant
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|
16 |
5 |
p. 50
|
artikel
|
| 6 |
Analysis of thin film fire sensors
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16 |
5 |
p. 48
|
artikel
|
| 7 |
A new active-C oscillator
|
Taher Abuelma' Atti, Muhammad
|
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|
16 |
5 |
p. 18-21
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artikel
|
| 8 |
An experimental approach to vapor phase reflow solder assembly
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|
16 |
5 |
p. 52
|
artikel
|
| 9 |
A novel memory device for VLSI E2 prom
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16 |
5 |
p. 46
|
artikel
|
| 10 |
Application of electron beams in thermal processing of semiconductor materials and devices
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16 |
5 |
p. 52
|
artikel
|
| 11 |
Bipolar device packaging-electrical, thermal, and mechanical stress considerations
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16 |
5 |
p. 47
|
artikel
|
| 12 |
Bipolar gate array delivers fast signal processing
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16 |
5 |
p. 46
|
artikel
|
| 13 |
Chromium redistribution in ion-implanted GaAs
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16 |
5 |
p. 52
|
artikel
|
| 14 |
Contamination prevention and protection for process gases
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16 |
5 |
p. 50
|
artikel
|
| 15 |
Control of polysilicon film properties
|
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16 |
5 |
p. 51
|
artikel
|
| 16 |
Deposition and patterning of the tungsten and tantaium polycides
|
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|
16 |
5 |
p. 51
|
artikel
|
| 17 |
Designing for testability
|
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|
16 |
5 |
p. 53
|
artikel
|
| 18 |
Design system for semi-custom VLSI cicuits
|
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|
16 |
5 |
p. 47
|
artikel
|
| 19 |
Detection and accelerated testing of vibration-induced connector wear
|
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|
16 |
5 |
p. 53
|
artikel
|
| 20 |
Direct attachment of leadless chip carriers to organic matrix printed wiring boards
|
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|
16 |
5 |
p. 47-48
|
artikel
|
| 21 |
Editorial
|
Butcher, John
|
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|
16 |
5 |
p. 3
|
artikel
|
| 22 |
Electrical characteristics of large scale integration (LSI) Mosfet's at very high temperatures. Part I; theory
|
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|
16 |
5 |
p. 53
|
artikel
|
| 23 |
Electrical characteristics of large-scale integration silicon MOSFET's at very high temperatures, Part III: modelling and circuit behaviour
|
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|
16 |
5 |
p. 53
|
artikel
|
| 24 |
Electron beam resist systems—a critical review of recent developments
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16 |
5 |
p. 51
|
artikel
|
| 25 |
Failures induced by electromigration in ECL 100k devices
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16 |
5 |
p. 50
|
artikel
|
| 26 |
Fast C-MOS logic bids for TTL sockets in most systems
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16 |
5 |
p. 46
|
artikel
|
| 27 |
Fatigue life of leadless chip carrier solder joints during power cycling
|
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|
16 |
5 |
p. 49
|
artikel
|
| 28 |
Forthcoming events
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16 |
5 |
p. 55-58
|
artikel
|
| 29 |
Fretting corrosion of solder-coated electrical contacts
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16 |
5 |
p. 52-53
|
artikel
|
| 30 |
High pinout IC packaging and the density advantage of surface mounting
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|
16 |
5 |
p. 49
|
artikel
|
| 31 |
Impact of custom VLSI technology
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|
16 |
5 |
p. 46
|
artikel
|
| 32 |
Improved electrical performance required for future MOS packaging
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|
16 |
5 |
p. 47
|
artikel
|
| 33 |
Improved planar isolation with buried-channel MOS FET's
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16 |
5 |
p. 47
|
artikel
|
| 34 |
ITT's testability analysis program
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16 |
5 |
p. 53
|
artikel
|
| 35 |
Management of AICI3 in plasma etching aluminium and its alloys
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|
16 |
5 |
p. 51
|
artikel
|
| 36 |
Methodologies for full custom VLSI design
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|
16 |
5 |
p. 47
|
artikel
|
| 37 |
Modelling of discrete semiconductor devices
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|
16 |
5 |
p. 48
|
artikel
|
| 38 |
Modular approach to C-MOS technology tailors process to application
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16 |
5 |
p. 46
|
artikel
|
| 39 |
Multilayer resist processes and laternatives
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|
16 |
5 |
p. 52
|
artikel
|
| 40 |
Noise investigations on thick film resistors
|
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16 |
5 |
p. 48
|
artikel
|
| 41 |
Non-inverting regenerative CMOS logic circuits
|
Bundalo, Zlatko V.
|
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|
16 |
5 |
p. 5-17
|
artikel
|
| 42 |
Nonlinear distortion in current-feedback amplifiers
|
Martinez, Pedro A.
|
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|
16 |
5 |
p. 22-30
|
artikel
|
| 43 |
[No title]
|
Howson, M.
|
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|
16 |
5 |
p. 45
|
artikel
|
| 44 |
[No title]
|
Fletcher, A.E.
|
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|
16 |
5 |
p. 45
|
artikel
|
| 45 |
Power bipolar devices
|
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|
16 |
5 |
p. 48
|
artikel
|
| 46 |
Power M.O.S. devices
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|
16 |
5 |
p. 48
|
artikel
|
| 47 |
Properties of metal-semiconductor contacts-II. Numerical solutions for intrinsic material
|
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|
16 |
5 |
p. 51
|
artikel
|
| 48 |
Research and development
|
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|
16 |
5 |
p. 59-63
|
artikel
|
| 49 |
Roop
|
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|
16 |
5 |
p. 46
|
artikel
|
| 50 |
Selective reactive ion etching of silicon dioxide
|
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|
16 |
5 |
p. 52
|
artikel
|
| 51 |
Solder pastes for microelectronics
|
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|
16 |
5 |
p. 50
|
artikel
|
| 52 |
Square 25-thou posts/receptacles dorminate US interconnection market
|
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|
16 |
5 |
p. 48
|
artikel
|
| 53 |
Status and prospects for gallium arsenide technology
|
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|
16 |
5 |
p. 46
|
artikel
|
| 54 |
Switch failure in a two-unit standby system with better utilization of units
|
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|
16 |
5 |
p. 50
|
artikel
|
| 55 |
The density of states at GaAs/native oxide interfaces
|
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|
16 |
5 |
p. 53
|
artikel
|
| 56 |
The effect of high dissipation components on the solder joints of ceramic chip carriers attached to thick film alumina substrates
|
|
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|
16 |
5 |
p. 49
|
artikel
|
| 57 |
The gold donor and acceptor level in p-type silicon
|
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|
16 |
5 |
p. 54
|
artikel
|
| 58 |
Thermal studies on pin grid array packages for high density LSI and VLSI logic circuits
|
|
|
|
16 |
5 |
p. 49-50
|
artikel
|
| 59 |
The role of inorganic materials in dry-processed resist technology
|
|
|
|
16 |
5 |
p. 50
|
artikel
|
| 60 |
Thin film processing of hybrid ICs
|
|
|
|
16 |
5 |
p. 49
|
artikel
|
| 61 |
Transition to one micro technology: Part 2
|
|
|
|
16 |
5 |
p. 47
|
artikel
|
| 62 |
Trends in medical electronics using surface mounted components and hybrids
|
|
|
|
16 |
5 |
p. 49
|
artikel
|
| 63 |
Uniform plasma etching of printed circuit boards
|
|
|
|
16 |
5 |
p. 52
|
artikel
|
| 64 |
Work function measurements during a growth of ultra thin films of SiO2 on characterized silicon surfaces
|
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|
16 |
5 |
p. 54
|
artikel
|
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