| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 12-bit 2.5-bit/phase two-stage cyclic ADC with phase scaling and low-power Sub-ADC for CMOS image sensor
|
Zhao, Shuanghan
|
|
|
150 |
C |
p.
|
artikel
|
| 2 |
A 94.5-dB SNDR 96.5-dB DR discrete-time delta-sigma modulator using FIA assisted OTA and FIR DAC feedback
|
Huang, Gongxing
|
|
|
150 |
C |
p.
|
artikel
|
| 3 |
A fast-response RBCOT buck converter with second-order differential and integrator compensation based on FVF
|
Liu, Sujuan
|
|
|
150 |
C |
p.
|
artikel
|
| 4 |
A FI-SPDT with high isolation based on design method of transfer function
|
Lv, Jin-Jie
|
|
|
150 |
C |
p.
|
artikel
|
| 5 |
A hybrid SAR ADC with input range extension
|
Qin, Kefan
|
|
|
150 |
C |
p.
|
artikel
|
| 6 |
A low-light-level CMOS image sensor with a novel correlated double sampling based on CTIA
|
Zou, Mei
|
|
|
150 |
C |
p.
|
artikel
|
| 7 |
Analysis and design of a 0.9 V 1 GHz-BW 14.6 dBm-OIP3 broadband receiver with current-mode analog baseband in 12 nm FinFET CMOS
|
Wang, Guangao
|
|
|
150 |
C |
p.
|
artikel
|
| 8 |
Analysis of source second-harmonic-controlled wideband extended series of continuous modes power amplifiers
|
Xuan, Xuefei
|
|
|
150 |
C |
p.
|
artikel
|
| 9 |
A 65-nm duty-cycle corrector achieving 10% to 90% duty-correction range with < 0.86% duty-cycle error
|
Akram, Muhammad Abrar
|
|
|
150 |
C |
p.
|
artikel
|
| 10 |
A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model
|
Rajalakshmi, E.
|
|
|
150 |
C |
p.
|
artikel
|
| 11 |
A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor
|
Jiang, Yixun
|
|
|
150 |
C |
p.
|
artikel
|
| 12 |
A power-efficient CMOS image sensor with current-mode 1-bit log-gradient feature extractor for always-on object detection
|
Yi, Liyan
|
|
|
150 |
C |
p.
|
artikel
|
| 13 |
A 6 ppm/°C capacitively-biased diode based novel bandgap circuit with driving capability and calibration
|
Hu, Kewei
|
|
|
150 |
C |
p.
|
artikel
|
| 14 |
A 275 pW, 0.5 V supply insensitive gate-leakage based current/voltage reference circuit for a wide temperature range of −55 to 100 °C without using amplifiers and resistors
|
Sahishnavi, Bhartipudi
|
|
|
150 |
C |
p.
|
artikel
|
| 15 |
A wideband inductorless LNA utilizing common-source noise-canceling and cascode configuration
|
Xiao, Wenrun
|
|
|
150 |
C |
p.
|
artikel
|
| 16 |
Compact high attenuation wide rejection bandwidth 5-pole Butterworth LPF using transmission zeros in GaAs process
|
Chakraborty, Sudipta
|
|
|
150 |
C |
p.
|
artikel
|
| 17 |
Design and application of germanium based complementary TFET devices with step tunneling paths
|
Chen, Rui
|
|
|
150 |
C |
p.
|
artikel
|
| 18 |
Design and preparation of L-band multilayer low-group delay filter based on inner sputtering
|
Pan, ChangKai
|
|
|
150 |
C |
p.
|
artikel
|
| 19 |
Editorial Board
|
|
|
|
150 |
C |
p.
|
artikel
|
| 20 |
Efficient architecture for ocular artifacts removal from EEG: A Novel approach based on DWT-LMM
|
Bahadur, I. Naurin
|
|
|
150 |
C |
p.
|
artikel
|
| 21 |
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination
|
Luo, Xiaorong
|
|
|
150 |
C |
p.
|
artikel
|
| 22 |
High-performance convolutional neural network emulation via FPGA-integrated memristive circuitry
|
Yang, Yucheng
|
|
|
150 |
C |
p.
|
artikel
|
| 23 |
Investigation of performance dependence on transduction diaphragm design for piezoelectric micromachined ultrasonic transducers
|
Liu, Chongbin
|
|
|
150 |
C |
p.
|
artikel
|
| 24 |
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques
|
Kong, Moufu
|
|
|
150 |
C |
p.
|
artikel
|
| 25 |
Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate
|
Duan, Huali
|
|
|
150 |
C |
p.
|
artikel
|
| 26 |
Thermal characteristics analysis of Ga2O3 and GaN devices on different substrates
|
Liu, Chunyan
|
|
|
150 |
C |
p.
|
artikel
|
| 27 |
16.2-μW Super Class-AB OTA with current-reuse technique achieving 130.3-μA/μA FoM
|
Zhao, Haodong
|
|
|
150 |
C |
p.
|
artikel
|
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