no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Ab initio simulation of high pressure influence on He–H interaction in silicon
|
Zavodinsky, Victor G. |
|
2005 |
78 |
2-4 |
p. 247-249 3 p. |
article |
2 |
Accelerator-based ion beam analysis of fusion reactor materials
|
Rubel, M. |
|
2005 |
78 |
2-4 |
p. 255-261 7 p. |
article |
3 |
Adhesive character of wear processes in nitrogen-implanted iron
|
Tarkowski, P. |
|
2005 |
78 |
2-4 |
p. 679-683 5 p. |
article |
4 |
Advanced thermal processing of semiconductor materials in the millisecond range
|
Skorupa, W. |
|
2005 |
78 |
2-4 |
p. 673-677 5 p. |
article |
5 |
A low energy ion beam line for highly charged ions
|
Zschornack, Günter |
|
2005 |
78 |
2-4 |
p. 319-323 5 p. |
article |
6 |
Application of ion implantation for mono-Si piezoresistors manufacturing in silicon MEMS technology
|
Jaroszewicz, B. |
|
2005 |
78 |
2-4 |
p. 263-267 5 p. |
article |
7 |
Application of laser ion source for ion implantation technology
|
Rosiński, M. |
|
2005 |
78 |
2-4 |
p. 435-438 4 p. |
article |
8 |
Argon ion beam voltage in a dual ion beam sputtering system influence on the aluminum nitride films microstructure
|
Han, Sheng |
|
2005 |
78 |
2-4 |
p. 539-543 5 p. |
article |
9 |
Author Index
|
|
|
2005 |
78 |
2-4 |
p. X-XII nvt p. |
article |
10 |
Blistering in diamond implanted with hydrogen ions
|
Khmelnitskiy, R.A. |
|
2005 |
78 |
2-4 |
p. 273-279 7 p. |
article |
11 |
Catalytic properties of Al2O3 deposited by ion sputtering using DC and RF sources
|
Reszka, K. |
|
2005 |
78 |
2-4 |
p. 149-155 7 p. |
article |
12 |
Charge transfer dynamics in atom scattering on atoms adsorbed on metal surface: Effect of electron correlations
|
Wiertel, M. |
|
2005 |
78 |
2-4 |
p. 325-329 5 p. |
article |
13 |
Comparison of laser and thermal annealing of diamonds implanted with deuterium
|
Khomich, A.V. |
|
2005 |
78 |
2-4 |
p. 577-582 6 p. |
article |
14 |
Complementarity of X-ray diffraction and RBS in thin film characterization
|
Machajdík, Daniel |
|
2005 |
78 |
2-4 |
p. 455-461 7 p. |
article |
15 |
Corrosion resistance of the surface layers formed on titanium by plasma electrolytic oxidation and hydrothermal treatment
|
Baszkiewicz, J. |
|
2005 |
78 |
2-4 |
p. 143-147 5 p. |
article |
16 |
Coulomb explosion of C 7 H 7 2 + ions produced by electron impact ionization of toluene
|
Głuch, K. |
|
2005 |
78 |
2-4 |
p. 187-191 5 p. |
article |
17 |
Dependence of nitrogen implantation by the PIII process at low energy on pressure and temperature
|
López-Callejas, R. |
|
2005 |
78 |
2-4 |
p. 115-118 4 p. |
article |
18 |
Deposition of monoatomic and compound metal layers by the dynamic ion mixing
|
Bojko, E.B. |
|
2005 |
78 |
2-4 |
p. 241-245 5 p. |
article |
19 |
Deposition of nanostructured metal coatings on the modified silicon surfaces in the magnetoplasma compressor
|
Astashynski, V.M. |
|
2005 |
78 |
2-4 |
p. 157-160 4 p. |
article |
20 |
Deposition of Zr–ZrO X and Y–Y X O Y films by reactive magnetron sputtering
|
Laurikaitis, M. |
|
2005 |
78 |
2-4 |
p. 395-399 5 p. |
article |
21 |
Determination of atomic depth profile in ion-beam mixed bilayer systems from the Rutherford backscattering data
|
Khalfaoui, R. |
|
2005 |
78 |
2-4 |
p. 341-346 6 p. |
article |
22 |
Development of filtered DC metal plasma ion implantation and coating deposition methods based on high-frequency short-pulsed bias voltage application
|
Ryabchikov, A.I. |
|
2005 |
78 |
2-4 |
p. 331-336 6 p. |
article |
23 |
Diffusion and activation of Zn implanted into InP:S
|
Jakieła, R. |
|
2005 |
78 |
2-4 |
p. 417-422 6 p. |
article |
24 |
Discontinuous tracks in relaxed SiGe alloy layers: Formation and thermal evolution
|
Gaiduk, P.I. |
|
2005 |
78 |
2-4 |
p. 375-379 5 p. |
article |
25 |
Dissociation of nitrogen in the plasma-cathode interface of glow discharges
|
Wroński, Z. |
|
2005 |
78 |
2-4 |
p. 641-647 7 p. |
article |
26 |
Dressed state EPR nutations of E 1′ centers in neutron-irradiated quartz
|
Fedaruk, R. |
|
2005 |
78 |
2-4 |
p. 473-476 4 p. |
article |
27 |
Editorial
|
Michalak, Leszek |
|
2005 |
78 |
2-4 |
p. 113-114 2 p. |
article |
28 |
Editorial Board ; Publication Information
|
|
|
2005 |
78 |
2-4 |
p. CO2- 1 p. |
article |
29 |
Effect of excess vacancies in ion beam synthesis of SiC nanoclusters
|
Kögler, R. |
|
2005 |
78 |
2-4 |
p. 177-180 4 p. |
article |
30 |
Effect of mixed N and Ar implantation on tribological properties of tool steel
|
Budzynski, P. |
|
2005 |
78 |
2-4 |
p. 685-692 8 p. |
article |
31 |
Effect of sodium-ion implantation on the corrosion resistance and bioactivity of titanium
|
Krupa, D. |
|
2005 |
78 |
2-4 |
p. 161-166 6 p. |
article |
32 |
Effects of nitrogen implantation on lifetime of cutting tools made of SK5M tool steel
|
Narojczyk, Jerzy |
|
2005 |
78 |
2-4 |
p. 229-233 5 p. |
article |
33 |
Electrical measurement of the lattice damage induced by α -particle implantation in silicon
|
Bellemo, L. |
|
2005 |
78 |
2-4 |
p. 623-626 4 p. |
article |
34 |
Electrical properties of contacts covered with multicomponent coatings by the dynamic ion mixing
|
Bojko, E.B. |
|
2005 |
78 |
2-4 |
p. 495-502 8 p. |
article |
35 |
Experimental results for change of H and Li ions stopping in metal foils with temperature
|
Pawłowski, Bogdan |
|
2005 |
78 |
2-4 |
p. 439-444 6 p. |
article |
36 |
Extraction of the ion beam from hollow cathode ion source. Experiment and computer simulation
|
Turek, M. |
|
2005 |
78 |
2-4 |
p. 649-654 6 p. |
article |
37 |
Formation of radiation defects in silicon at high-energy implantation
|
Brinkevich, D.I. |
|
2005 |
78 |
2-4 |
p. 251-254 4 p. |
article |
38 |
Fractal analysis of roughness profile induced by ion bombardment of metal surface
|
Martan, J. |
|
2005 |
78 |
2-4 |
p. 217-221 5 p. |
article |
39 |
Frequency-dependent annealing characteristics of the implant-isolated GaAs layers
|
Kowalski, M. |
|
2005 |
78 |
2-4 |
p. 311-317 7 p. |
article |
40 |
Friction properties of ion-beam modified materials: Where can we search for practical applications of ion implantation?
|
Jagielski, Jacek |
|
2005 |
78 |
2-4 |
p. 409-415 7 p. |
article |
41 |
Generation of (M–H)− ions by dissociative electron attachment to simple organic acids M
|
Pelc, A. |
|
2005 |
78 |
2-4 |
p. 631-634 4 p. |
article |
42 |
Glow discharge sputtering of two-component cathode target
|
Wroński, Z. |
|
2005 |
78 |
2-4 |
p. 605-610 6 p. |
article |
43 |
High pressure investigations of positive ion–molecule reactions in a mixture of C3H6 and Ne
|
Bederski, Krzysztof |
|
2005 |
78 |
2-4 |
p. 635-640 6 p. |
article |
44 |
High-temperature annealing of electron-irradiated high-voltage diode structures on neutron transmutation-doped Si
|
Korshunov, F.P. |
|
2005 |
78 |
2-4 |
p. 211-215 5 p. |
article |
45 |
Hydrogen behaviour in novel materials for spintronic: GaFeN codoped with Mg, Si and Al
|
Turos, Andrzej |
|
2005 |
78 |
2-4 |
p. 285-290 6 p. |
article |
46 |
Hydrogen-induced phase transformations in nanostructured graphite made by controlled ball milling
|
Jartych, E. |
|
2005 |
78 |
2-4 |
p. 347-351 5 p. |
article |
47 |
Hydrogen release in UHMWPE upon He-ion bombardment
|
Abdul-Kader, A.M. |
|
2005 |
78 |
2-4 |
p. 281-284 4 p. |
article |
48 |
Impact excitation of MF magnetron discharge for PVD processes
|
Kuzmichev, Anatoly |
|
2005 |
78 |
2-4 |
p. 611-615 5 p. |
article |
49 |
Implantation induced interdiffusion of InGaAs quantum dots-effect of ion species, dose and substrate temperature
|
Ahmed, S. |
|
2005 |
78 |
2-4 |
p. 137-141 5 p. |
article |
50 |
Improvement of tribological properties of aluminum by nitrogen implantation
|
Youssef, A.A. |
|
2005 |
78 |
2-4 |
p. 599-603 5 p. |
article |
51 |
Influence of deep-implanted Kr ions on resistivity of pressure manganin sensors
|
Wilczyńska, T. |
|
2005 |
78 |
2-4 |
p. 515-518 4 p. |
article |
52 |
Influence of higher semiinvariants on the fitting parameters of implanted ions distribution
|
Ilyina, V.V. |
|
2005 |
78 |
2-4 |
p. 381-384 4 p. |
article |
53 |
Influence of low-energy ion-beam treatment by hydrogen on electrical activity of grain boundaries in polycrystalline silicon
|
Saad, A. |
|
2005 |
78 |
2-4 |
p. 269-272 4 p. |
article |
54 |
Influence of surface barriers on hydrogen storage in MgAl films on permeable stainless steel membranes
|
Pranevicius, L. |
|
2005 |
78 |
2-4 |
p. 367-373 7 p. |
article |
55 |
Investigation of optical properties of a-C:H films deposited from acetylene using direct ion beam deposition method
|
Grigonis, A. |
|
2005 |
78 |
2-4 |
p. 593-597 5 p. |
article |
56 |
Ion beam analysis of urban aerosol micro and nanoparticles compared with environmentally related children diseases in two Polish towns
|
Konarski, P. |
|
2005 |
78 |
2-4 |
p. 297-301 5 p. |
article |
57 |
Ion-beam coatings based on Ni and Cr with ultradispersed diamonds—structure and properties
|
Andreyev, M. |
|
2005 |
78 |
2-4 |
p. 451-454 4 p. |
article |
58 |
Ion-beam formation of nanopores and nanoclusters in SiO2
|
Komarov, F.F. |
|
2005 |
78 |
2-4 |
p. 361-366 6 p. |
article |
59 |
Ion beam shadowing effects in SIMS depth profile analysis of MBE-grown nanostructures
|
Ćwil, M. |
|
2005 |
78 |
2-4 |
p. 291-295 5 p. |
article |
60 |
Ion beam synthesis of Si nanocrystals in silicon dioxide and sapphire matrices—the photoluminescence study
|
Tetelbaum, D.I. |
|
2005 |
78 |
2-4 |
p. 519-524 6 p. |
article |
61 |
Ion implantation as a pre-treatment method of AlN substrate for direct bonding with copper
|
Barlak, M. |
|
2005 |
78 |
2-4 |
p. 205-209 5 p. |
article |
62 |
Ion implantation of hydrogen and helium into silicon wafers for layer transfer in devices
|
Hurley, R.E. |
|
2005 |
78 |
2-4 |
p. 167-175 9 p. |
article |
63 |
Ion–molecule reaction in pure H2S
|
Wójcik, Leszek |
|
2005 |
78 |
2-4 |
p. 193-197 5 p. |
article |
64 |
Ion stopping cross-section at ferro-paramagnetic phase transition
|
Moneta, Marek |
|
2005 |
78 |
2-4 |
p. 467-472 6 p. |
article |
65 |
Irradiation-induced silicide formation in the ion beam-mixed Au/Si(100) system at room temperature
|
Khalfaoui, R. |
|
2005 |
78 |
2-4 |
p. 223-227 5 p. |
article |
66 |
Irradiation of cubic boron nitride microcrystals of different dopant-faulted structure with neutrons of fission spectrum
|
Azarko, I. |
|
2005 |
78 |
2-4 |
p. 525-528 4 p. |
article |
67 |
Mass spectrometric study of ion/molecule reaction in methane and ammonia mixtures
|
Wójcik, L. |
|
2005 |
78 |
2-4 |
p. 235-240 6 p. |
article |
68 |
Mass spectroscopic and IR spectroscopic evaluation of abnormal biological samples
|
Huleihel, Mahmoud |
|
2005 |
78 |
2-4 |
p. 557-562 6 p. |
article |
69 |
Matrix-assisted laser desorption/ionization detection of hemoglobin from long-stored samples of human blood
|
Smolira, Anna |
|
2005 |
78 |
2-4 |
p. 655-660 6 p. |
article |
70 |
Mixing of chromium/carbon steel by compressive plasma flows
|
Uglov, V.V. |
|
2005 |
78 |
2-4 |
p. 489-493 5 p. |
article |
71 |
Modification of the near surface layer of carbon steels with intense argon and nitrogen plasma pulses
|
Sartowska, B. |
|
2005 |
78 |
2-4 |
p. 181-186 6 p. |
article |
72 |
Mössbauer investigations of iron under the action of hydrogen and nitrogen compressive plasma flows
|
Anishchik, V.M. |
|
2005 |
78 |
2-4 |
p. 589-592 4 p. |
article |
73 |
Optical and microstructural properties of doubly Ge–Si implanted SiO2 layers
|
Prucnal, S. |
|
2005 |
78 |
2-4 |
p. 693-697 5 p. |
article |
74 |
Optical properties of GaN synthesized by implantation of nitrogen ions into GaAs
|
Bumai, Yu.A. |
|
2005 |
78 |
2-4 |
p. 119-122 4 p. |
article |
75 |
Optimization of the formation process of dielectric microwaveguides on the basis of polymer/SiO2/Si systems using ion irradiation
|
Komarov, F.F. |
|
2005 |
78 |
2-4 |
p. 617-622 6 p. |
article |
76 |
Peculiarities of the track formation in InP and GaAs crystals
|
Komarov, F.F. |
|
2005 |
78 |
2-4 |
p. 353-359 7 p. |
article |
77 |
Phase structure of the Fe–Ti layers produced by the IPD method
|
Nowakowska-Langier, Katarzyna |
|
2005 |
78 |
2-4 |
p. 423-426 4 p. |
article |
78 |
Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing
|
Cheng, X.Q. |
|
2005 |
78 |
2-4 |
p. 667-671 5 p. |
article |
79 |
Plasma hydrogenation of MgAl thin films and H2 effusion
|
Pranevicius, L.L. |
|
2005 |
78 |
2-4 |
p. 477-481 5 p. |
article |
80 |
Preliminary results on the DECRIS 14-2m ECR heavy-ion injector source
|
Zeleňák, Andrej |
|
2005 |
78 |
2-4 |
p. 385-388 4 p. |
article |
81 |
Pressure stimulated creation of oxygen-related defects in oxygen-implanted and neutron-irradiated silicon
|
Jung, W. |
|
2005 |
78 |
2-4 |
p. 199-203 5 p. |
article |
82 |
Proton implant isolation in GaN
|
Wiatrowski, A. |
|
2005 |
78 |
2-4 |
p. 463-466 4 p. |
article |
83 |
Radiation damage of Si wafers modified by means of thin layer ion assisted deposition
|
Tashlykov, I.S. |
|
2005 |
78 |
2-4 |
p. 337-340 4 p. |
article |
84 |
Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions
|
Stan˘o, J. |
|
2005 |
78 |
2-4 |
p. 627-630 4 p. |
article |
85 |
Raman and photoluminescence spectroscopy from n- and p-type 6H-SIC alpha-particle irradiated
|
Kunert, H.W. |
|
2005 |
78 |
2-4 |
p. 503-508 6 p. |
article |
86 |
RBS analysis of rapidly solidified Al–Si–Ti alloy with Fe and Ni dopes
|
Tashlykova-Bushkevich, I.I. |
|
2005 |
78 |
2-4 |
p. 529-532 4 p. |
article |
87 |
Recent advances in surface processing with the filtered DC vacuum-arc plasma
|
Ryabchikov, A.I. |
|
2005 |
78 |
2-4 |
p. 445-449 5 p. |
article |
88 |
Silicon-based light emitting devices
|
Lourenço, M.A. |
|
2005 |
78 |
2-4 |
p. 551-556 6 p. |
article |
89 |
SIMS investigation of nitride coatings
|
Anischik, V.M. |
|
2005 |
78 |
2-4 |
p. 545-550 6 p. |
article |
90 |
Simulation of phosphorus ions interaction with Ge(100)-2×1 surfaces
|
Anan’yina, Ol’ga |
|
2005 |
78 |
2-4 |
p. 509-513 5 p. |
article |
91 |
Slow positron implantation spectroscopy—a tool to characterize vacancy-type damage in ion-implanted 6H-SiC
|
Brauer, G. |
|
2005 |
78 |
2-4 |
p. 131-136 6 p. |
article |
92 |
Spectroscopic ellipsometry study of buried graphitized layers in the ion-implanted diamond
|
Khomich, A.V. |
|
2005 |
78 |
2-4 |
p. 583-587 5 p. |
article |
93 |
Structural studies on ion-implanted semiconductors using X-ray synchrotron radiation: Strain evolution and growth of nanocrystals
|
Eichhorn, Frank |
|
2005 |
78 |
2-4 |
p. 303-309 7 p. |
article |
94 |
Structure-phase transformations in high-speed steel treated by compression plasma flow
|
Cherenda, N.N. |
|
2005 |
78 |
2-4 |
p. 483-487 5 p. |
article |
95 |
Superconductivity of MgB2 thin films prepared by ion implantation and pulsed plasma treatment
|
Piekoszewski, J. |
|
2005 |
78 |
2-4 |
p. 123-129 7 p. |
article |
96 |
Surface modification of austenitic steel by low-temperature plasma
|
Baranowska, J. |
|
2005 |
78 |
2-4 |
p. 389-394 6 p. |
article |
97 |
Surface reconstruction with the photometric method in SEM
|
Paluszyński, J. |
|
2005 |
78 |
2-4 |
p. 533-537 5 p. |
article |
98 |
Swift heavy-ion modification of the interface structure in Fe/Cr multilayers
|
Kąc, M. |
|
2005 |
78 |
2-4 |
p. 661-665 5 p. |
article |
99 |
Synthesis of single-phase carbon nitride film prepared by hot implantation
|
Shimoyama, Iwao |
|
2005 |
78 |
2-4 |
p. 563-568 6 p. |
article |
100 |
Use of ion channeling for the study of the damage induced in ceramics by ion irradiation
|
Thomé, L. |
|
2005 |
78 |
2-4 |
p. 401-408 8 p. |
article |
101 |
Vacuum in an accelerator system—calculations and measurements
|
Hellborg, Ragnar |
|
2005 |
78 |
2-4 |
p. 427-434 8 p. |
article |
102 |
X-ray diffraction studies of GaAs implanted with 1.5MeV Se+ ions
|
Wierzchowski, Wojciech |
|
2005 |
78 |
2-4 |
p. 569-575 7 p. |
article |