Digital Library
Close Browse articles from a journal
 
Search for with title:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
                                       All articles of the corresponding issues
 
                             58 results found
no title author magazine year volume issue page(s) type
1 Amorphous ZnO–In2O3 transparent conductive films by simultaneous sputtering method of ZnO and In2O3 targets Tominaga, K.
 2002
 66 3-4 p. 505-509
5 p.
 article
2 Author Index for Volume 66 2002
 66 3-4 p. VII-VIII
nvt p.
 article
3 Blue shift of photoluminescence spectrum of porous silicon by helium ion irradiation Yamauchi, Y
 2002
 66 3-4 p. 415-418
4 p.
 article
4 Characteristics of Fe–N films deposited by a reactive ion beam sputtering using adsorptive and ionized nitrogen Iwatsubo, S
 2002
 66 3-4 p. 251-256
6 p.
 article
5 Characterization of CN x films prepared by reactive magnetron sputtering Togashi, Yuki
 2002
 66 3-4 p. 391-395
5 p.
 article
6 Characterization of low temperature growth carbon nanofibers synthesized by using plasma enhanced chemical vapor deposition Ikuno, T.
 2002
 66 3-4 p. 341-345
5 p.
 article
7 Characterization of RF-sputtered self-polarized PZT thin films for IR sensor arrays Suchaneck, G
 2002
 66 3-4 p. 473-478
6 p.
 article
8 Characterization of solid oxide fuel cell device having a three-layer film structure grown by RF magnetron sputtering Nagata, A
 2002
 66 3-4 p. 523-529
7 p.
 article
9 Control of temperature coefficient of frequency in zinc oxide thin film bulk acoustic wave resonators at various frequency ranges Yoshino, Y
 2002
 66 3-4 p. 467-472
6 p.
 article
10 CrN films deposited by rf reactive sputtering using a plasma emission monitoring control Inoue, Shozo
 2002
 66 3-4 p. 227-231
5 p.
 article
11 Crystallinity and stoichiometry of InN x films deposited by reactive dc magnetron sputtering Song, P.K
 2002
 66 3-4 p. 373-378
6 p.
 article
12 Dependence of dielectric and ferroelectric behaviors on growth orientation in epitaxial BaTiO3/SrTiO3 superlattices Nakagawara, O
 2002
 66 3-4 p. 397-401
5 p.
 article
13 Dependence on substrate temperature of the film structure of μc-Si:H prepared by RF magnetron sputtering Kondo, J.
 2002
 66 3-4 p. 409-413
5 p.
 article
14 Deposition of carbon films by plasma-based ion implantation using glow discharge plasma ignited by high voltage pulses applied to substrates Shinno, H
 2002
 66 3-4 p. 335-339
5 p.
 article
15 Development of a cylindrical DC magnetron sputtering apparatus assisted by microwave plasma Yonesu, Akira
 2002
 66 3-4 p. 275-278
4 p.
 article
16 ECR-plasma parameters and properties of thin DLC films Inaba, H.
 2002
 66 3-4 p. 487-493
7 p.
 article
17 Effective electromechanical coupling coefficient (kt 2) for fundamental mode of thickness extensional mode thin film bulk acoustic wave resonator fabricated by ZnO thin film Takeuchi, Masaki
 2002
 66 3-4 p. 463-466
4 p.
 article
18 Effect of sputtering gas pressure and nitrogen concentration on crystal orientation and residual stress in sputtered AlN films Kusaka, K
 2002
 66 3-4 p. 441-446
6 p.
 article
19 Effect of tin oxide dispersion on nodule formation in ITO sputtering Nakashima, K
 2002
 66 3-4 p. 221-226
6 p.
 article
20 Effects of argon and hydrogen plasmas on the surface of silicon Umezu, I
 2002
 66 3-4 p. 453-456
4 p.
 article
21 Effects of ion flux on the properties of dc magnetron-sputtered stainless steel films Inoue, Shozo
 2002
 66 3-4 p. 257-261
5 p.
 article
22 Effects of oxygen gettering and target mode change in the formation process of reactively RF sputtered WO x thin films Yamamoto, A
 2002
 66 3-4 p. 269-273
5 p.
 article
23 Electrical and mechanical properties of SnO2:Nb films for touch screens Kikuchi, N
 2002
 66 3-4 p. 365-371
7 p.
 article
24 Energetic oxygen ions in ZrO2 deposition by reactive sputtering of Zr Tominaga, Kikuo
 2002
 66 3-4 p. 279-284
6 p.
 article
25 Etching characteristics of magnetic materials (Co, Fe, Ni) using CO/NH3 gas plasma for hardening mask etching Matsui, N
 2002
 66 3-4 p. 479-485
7 p.
 article
26 Fabrication of Silicon/Germanium superlattice by ion-beam sputtering Sasaki, K
 2002
 66 3-4 p. 457-462
6 p.
 article
27 Ferroelectric properties of epitaxial Bi4Ti3O12 films deposited on epitaxial (100) Ir and (100) Pt films on Si by sputtering Horita, S
 2002
 66 3-4 p. 427-433
7 p.
 article
28 Film properties of ZnO:Al films deposited by co-sputtering of ZnO:Al and contaminated Zn targets with Co, Mn and Cr Tominaga, K
 2002
 66 3-4 p. 511-515
5 p.
 article
29 Fine particles in dusty plasmas I, Lin
 2002
 66 3-4 p. 285-291
7 p.
 article
30 Frontier of transparent conductive oxide thin films Hosono, H
 2002
 66 3-4 p. 419-425
7 p.
 article
31 GaN films deposited by planar magnetron sputtering Kikuma, T
 2002
 66 3-4 p. 233-237
5 p.
 article
32 Gas barrier properties of silicon oxide films prepared by plasma-enhanced CVD using tetramethoxysilane Teshima, K
 2002
 66 3-4 p. 353-357
5 p.
 article
33 High-quality SiO2 film deposition using active reaction by oxygen radical Kumagai, A
 2002
 66 3-4 p. 317-322
6 p.
 article
34 Influence of surface morphology on the tribological properties of silver–graphite overlays Lungu, C.P
 2002
 66 3-4 p. 385-390
6 p.
 article
35 In situ monitoring of plasma parameters in the afterglow region of ECR sputtering system for tribological coatings Lungu, C.P
 2002
 66 3-4 p. 197-202
6 p.
 article
36 Ion temperature and fluctuation in a large-diameter electron–cyclotron-resonance plasma Koga, Mayuko
 2002
 66 3-4 p. 329-334
6 p.
 article
37 Large area electron-beam-excited plasma of meter size for industrial applications Homyara, H
 2002
 66 3-4 p. 203-207
5 p.
 article
38 Limited reaction growth of YSZ (ZrO2:Y2O3) thin films for gate insulator Sasaki, Kimihiro
 2002
 66 3-4 p. 403-408
6 p.
 article
39 Low temperature deposition of TiO2 films with high refractive indices by oxygen-radical beam-assisted evaporation combined with ion beam Yamada, Yasumi
 2002
 66 3-4 p. 347-352
6 p.
 article
40 Multilayer Fresnel zone plate for high-energy X-ray by DC sputtering deposition Tamura, Shigeharu
 2002
 66 3-4 p. 495-499
5 p.
 article
41 Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma Muta, Hiroshi
 2002
 66 3-4 p. 209-214
6 p.
 article
42 Numerical simulation of electron orbits in a magnetized plasma excited by a surface wave Yoshida, Y.
 2002
 66 3-4 p. 215-220
6 p.
 article
43 Optical and electrical properties of pure Ag and Ag-based alloy thin films prepared by RF magnetron sputtering Suzuki, T
 2002
 66 3-4 p. 501-504
4 p.
 article
44 Plasma-enhanced chemical vapor deposition of silicon nitride below 250°C Kuo, Yue
 2002
 66 3-4 p. 299-303
5 p.
 article
45 Preparation of boron–carbon–nitrogen thin films by magnetron sputtering Yokomichi, H
 2002
 66 3-4 p. 245-249
5 p.
 article
46 Preparation of silicon oxide with bubble layer by helium plasma irradiation followed by oxidation Hino, T
 2002
 66 3-4 p. 311-315
5 p.
 article
47 Preparation of TiO2 thin films by sputtering applying electron cyclotron resonance plasma produced in arched magnetic mirrors Honbo, E
 2002
 66 3-4 p. 263-267
5 p.
 article
48 Production of a large-area argon microwave plasma by a ring slot antenna Shimatani, Kouhei
 2002
 66 3-4 p. 359-364
6 p.
 article
49 Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave Itagaki, N
 2002
 66 3-4 p. 323-328
6 p.
 article
50 Relationship between composition and work function of gold–samarium alloy thin films Kiwa, N
 2002
 66 3-4 p. 517-521
5 p.
 article
51 Structural and electrical properties of Cu films deposited on glass by DC magnetron sputtering Qiu, Hong
 2002
 66 3-4 p. 447-452
6 p.
 article
52 Study of electron field emission and structural properties of nanostructured carbon thin films deposited by hot-filament-assisted reactive sputtering using methane gas Lee, K.-Y
 2002
 66 3-4 p. 239-243
5 p.
 article
53 Sum-frequency vibrational spectroscopy of oxygen-ion and oxygen-radical treated poly(ethylene terephthalate) and oxide/poly(ethylene terephthalate) interface Miyamae, Takayuki
 2002
 66 3-4 p. 305-310
6 p.
 article
54 Surface molecular dynamics of Si/SiO2 reactive ion etching Hamaguchi, S.
 2002
 66 3-4 p. 189-195
7 p.
 article
55 The structure of TiN films deposited by arc ion plating Matsue, Tatsuya
 2002
 66 3-4 p. 435-439
5 p.
 article
56 Volume Contents for Volume 66 2002
 66 3-4 p. I-VI
nvt p.
 article
57 Water-repellency of a-C:H films deposited by rf plasma-enhanced CVD Kim, Je-Deok
 2002
 66 3-4 p. 379-383
5 p.
 article
58 What is the difference between catalytic CVD and plasma-enhanced CVD? Gas-phase kinetics and film properties Masuda, Atsushi
 2002
 66 3-4 p. 293-297
5 p.
 article
                             58 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands