| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphous ZnO–In2O3 transparent conductive films by simultaneous sputtering method of ZnO and In2O3 targets
|
Tominaga, K.
|
|
2002
|
66 |
3-4 |
p. 505-509
5 p.
|
artikel
|
| 2 |
Author Index for Volume 66
|
|
|
2002
|
66 |
3-4 |
p. VII-VIII
nvt p.
|
artikel
|
| 3 |
Blue shift of photoluminescence spectrum of porous silicon by helium ion irradiation
|
Yamauchi, Y
|
|
2002
|
66 |
3-4 |
p. 415-418
4 p.
|
artikel
|
| 4 |
Characteristics of Fe–N films deposited by a reactive ion beam sputtering using adsorptive and ionized nitrogen
|
Iwatsubo, S
|
|
2002
|
66 |
3-4 |
p. 251-256
6 p.
|
artikel
|
| 5 |
Characterization of CN x films prepared by reactive magnetron sputtering
|
Togashi, Yuki
|
|
2002
|
66 |
3-4 |
p. 391-395
5 p.
|
artikel
|
| 6 |
Characterization of low temperature growth carbon nanofibers synthesized by using plasma enhanced chemical vapor deposition
|
Ikuno, T.
|
|
2002
|
66 |
3-4 |
p. 341-345
5 p.
|
artikel
|
| 7 |
Characterization of RF-sputtered self-polarized PZT thin films for IR sensor arrays
|
Suchaneck, G
|
|
2002
|
66 |
3-4 |
p. 473-478
6 p.
|
artikel
|
| 8 |
Characterization of solid oxide fuel cell device having a three-layer film structure grown by RF magnetron sputtering
|
Nagata, A
|
|
2002
|
66 |
3-4 |
p. 523-529
7 p.
|
artikel
|
| 9 |
Control of temperature coefficient of frequency in zinc oxide thin film bulk acoustic wave resonators at various frequency ranges
|
Yoshino, Y
|
|
2002
|
66 |
3-4 |
p. 467-472
6 p.
|
artikel
|
| 10 |
CrN films deposited by rf reactive sputtering using a plasma emission monitoring control
|
Inoue, Shozo
|
|
2002
|
66 |
3-4 |
p. 227-231
5 p.
|
artikel
|
| 11 |
Crystallinity and stoichiometry of InN x films deposited by reactive dc magnetron sputtering
|
Song, P.K
|
|
2002
|
66 |
3-4 |
p. 373-378
6 p.
|
artikel
|
| 12 |
Dependence of dielectric and ferroelectric behaviors on growth orientation in epitaxial BaTiO3/SrTiO3 superlattices
|
Nakagawara, O
|
|
2002
|
66 |
3-4 |
p. 397-401
5 p.
|
artikel
|
| 13 |
Dependence on substrate temperature of the film structure of μc-Si:H prepared by RF magnetron sputtering
|
Kondo, J.
|
|
2002
|
66 |
3-4 |
p. 409-413
5 p.
|
artikel
|
| 14 |
Deposition of carbon films by plasma-based ion implantation using glow discharge plasma ignited by high voltage pulses applied to substrates
|
Shinno, H
|
|
2002
|
66 |
3-4 |
p. 335-339
5 p.
|
artikel
|
| 15 |
Development of a cylindrical DC magnetron sputtering apparatus assisted by microwave plasma
|
Yonesu, Akira
|
|
2002
|
66 |
3-4 |
p. 275-278
4 p.
|
artikel
|
| 16 |
ECR-plasma parameters and properties of thin DLC films
|
Inaba, H.
|
|
2002
|
66 |
3-4 |
p. 487-493
7 p.
|
artikel
|
| 17 |
Effective electromechanical coupling coefficient (kt 2) for fundamental mode of thickness extensional mode thin film bulk acoustic wave resonator fabricated by ZnO thin film
|
Takeuchi, Masaki
|
|
2002
|
66 |
3-4 |
p. 463-466
4 p.
|
artikel
|
| 18 |
Effect of sputtering gas pressure and nitrogen concentration on crystal orientation and residual stress in sputtered AlN films
|
Kusaka, K
|
|
2002
|
66 |
3-4 |
p. 441-446
6 p.
|
artikel
|
| 19 |
Effect of tin oxide dispersion on nodule formation in ITO sputtering
|
Nakashima, K
|
|
2002
|
66 |
3-4 |
p. 221-226
6 p.
|
artikel
|
| 20 |
Effects of argon and hydrogen plasmas on the surface of silicon
|
Umezu, I
|
|
2002
|
66 |
3-4 |
p. 453-456
4 p.
|
artikel
|
| 21 |
Effects of ion flux on the properties of dc magnetron-sputtered stainless steel films
|
Inoue, Shozo
|
|
2002
|
66 |
3-4 |
p. 257-261
5 p.
|
artikel
|
| 22 |
Effects of oxygen gettering and target mode change in the formation process of reactively RF sputtered WO x thin films
|
Yamamoto, A
|
|
2002
|
66 |
3-4 |
p. 269-273
5 p.
|
artikel
|
| 23 |
Electrical and mechanical properties of SnO2:Nb films for touch screens
|
Kikuchi, N
|
|
2002
|
66 |
3-4 |
p. 365-371
7 p.
|
artikel
|
| 24 |
Energetic oxygen ions in ZrO2 deposition by reactive sputtering of Zr
|
Tominaga, Kikuo
|
|
2002
|
66 |
3-4 |
p. 279-284
6 p.
|
artikel
|
| 25 |
Etching characteristics of magnetic materials (Co, Fe, Ni) using CO/NH3 gas plasma for hardening mask etching
|
Matsui, N
|
|
2002
|
66 |
3-4 |
p. 479-485
7 p.
|
artikel
|
| 26 |
Fabrication of Silicon/Germanium superlattice by ion-beam sputtering
|
Sasaki, K
|
|
2002
|
66 |
3-4 |
p. 457-462
6 p.
|
artikel
|
| 27 |
Ferroelectric properties of epitaxial Bi4Ti3O12 films deposited on epitaxial (100) Ir and (100) Pt films on Si by sputtering
|
Horita, S
|
|
2002
|
66 |
3-4 |
p. 427-433
7 p.
|
artikel
|
| 28 |
Film properties of ZnO:Al films deposited by co-sputtering of ZnO:Al and contaminated Zn targets with Co, Mn and Cr
|
Tominaga, K
|
|
2002
|
66 |
3-4 |
p. 511-515
5 p.
|
artikel
|
| 29 |
Fine particles in dusty plasmas
|
I, Lin
|
|
2002
|
66 |
3-4 |
p. 285-291
7 p.
|
artikel
|
| 30 |
Frontier of transparent conductive oxide thin films
|
Hosono, H
|
|
2002
|
66 |
3-4 |
p. 419-425
7 p.
|
artikel
|
| 31 |
GaN films deposited by planar magnetron sputtering
|
Kikuma, T
|
|
2002
|
66 |
3-4 |
p. 233-237
5 p.
|
artikel
|
| 32 |
Gas barrier properties of silicon oxide films prepared by plasma-enhanced CVD using tetramethoxysilane
|
Teshima, K
|
|
2002
|
66 |
3-4 |
p. 353-357
5 p.
|
artikel
|
| 33 |
High-quality SiO2 film deposition using active reaction by oxygen radical
|
Kumagai, A
|
|
2002
|
66 |
3-4 |
p. 317-322
6 p.
|
artikel
|
| 34 |
Influence of surface morphology on the tribological properties of silver–graphite overlays
|
Lungu, C.P
|
|
2002
|
66 |
3-4 |
p. 385-390
6 p.
|
artikel
|
| 35 |
In situ monitoring of plasma parameters in the afterglow region of ECR sputtering system for tribological coatings
|
Lungu, C.P
|
|
2002
|
66 |
3-4 |
p. 197-202
6 p.
|
artikel
|
| 36 |
Ion temperature and fluctuation in a large-diameter electron–cyclotron-resonance plasma
|
Koga, Mayuko
|
|
2002
|
66 |
3-4 |
p. 329-334
6 p.
|
artikel
|
| 37 |
Large area electron-beam-excited plasma of meter size for industrial applications
|
Homyara, H
|
|
2002
|
66 |
3-4 |
p. 203-207
5 p.
|
artikel
|
| 38 |
Limited reaction growth of YSZ (ZrO2:Y2O3) thin films for gate insulator
|
Sasaki, Kimihiro
|
|
2002
|
66 |
3-4 |
p. 403-408
6 p.
|
artikel
|
| 39 |
Low temperature deposition of TiO2 films with high refractive indices by oxygen-radical beam-assisted evaporation combined with ion beam
|
Yamada, Yasumi
|
|
2002
|
66 |
3-4 |
p. 347-352
6 p.
|
artikel
|
| 40 |
Multilayer Fresnel zone plate for high-energy X-ray by DC sputtering deposition
|
Tamura, Shigeharu
|
|
2002
|
66 |
3-4 |
p. 495-499
5 p.
|
artikel
|
| 41 |
Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma
|
Muta, Hiroshi
|
|
2002
|
66 |
3-4 |
p. 209-214
6 p.
|
artikel
|
| 42 |
Numerical simulation of electron orbits in a magnetized plasma excited by a surface wave
|
Yoshida, Y.
|
|
2002
|
66 |
3-4 |
p. 215-220
6 p.
|
artikel
|
| 43 |
Optical and electrical properties of pure Ag and Ag-based alloy thin films prepared by RF magnetron sputtering
|
Suzuki, T
|
|
2002
|
66 |
3-4 |
p. 501-504
4 p.
|
artikel
|
| 44 |
Plasma-enhanced chemical vapor deposition of silicon nitride below 250°C
|
Kuo, Yue
|
|
2002
|
66 |
3-4 |
p. 299-303
5 p.
|
artikel
|
| 45 |
Preparation of boron–carbon–nitrogen thin films by magnetron sputtering
|
Yokomichi, H
|
|
2002
|
66 |
3-4 |
p. 245-249
5 p.
|
artikel
|
| 46 |
Preparation of silicon oxide with bubble layer by helium plasma irradiation followed by oxidation
|
Hino, T
|
|
2002
|
66 |
3-4 |
p. 311-315
5 p.
|
artikel
|
| 47 |
Preparation of TiO2 thin films by sputtering applying electron cyclotron resonance plasma produced in arched magnetic mirrors
|
Honbo, E
|
|
2002
|
66 |
3-4 |
p. 263-267
5 p.
|
artikel
|
| 48 |
Production of a large-area argon microwave plasma by a ring slot antenna
|
Shimatani, Kouhei
|
|
2002
|
66 |
3-4 |
p. 359-364
6 p.
|
artikel
|
| 49 |
Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave
|
Itagaki, N
|
|
2002
|
66 |
3-4 |
p. 323-328
6 p.
|
artikel
|
| 50 |
Relationship between composition and work function of gold–samarium alloy thin films
|
Kiwa, N
|
|
2002
|
66 |
3-4 |
p. 517-521
5 p.
|
artikel
|
| 51 |
Structural and electrical properties of Cu films deposited on glass by DC magnetron sputtering
|
Qiu, Hong
|
|
2002
|
66 |
3-4 |
p. 447-452
6 p.
|
artikel
|
| 52 |
Study of electron field emission and structural properties of nanostructured carbon thin films deposited by hot-filament-assisted reactive sputtering using methane gas
|
Lee, K.-Y
|
|
2002
|
66 |
3-4 |
p. 239-243
5 p.
|
artikel
|
| 53 |
Sum-frequency vibrational spectroscopy of oxygen-ion and oxygen-radical treated poly(ethylene terephthalate) and oxide/poly(ethylene terephthalate) interface
|
Miyamae, Takayuki
|
|
2002
|
66 |
3-4 |
p. 305-310
6 p.
|
artikel
|
| 54 |
Surface molecular dynamics of Si/SiO2 reactive ion etching
|
Hamaguchi, S.
|
|
2002
|
66 |
3-4 |
p. 189-195
7 p.
|
artikel
|
| 55 |
The structure of TiN films deposited by arc ion plating
|
Matsue, Tatsuya
|
|
2002
|
66 |
3-4 |
p. 435-439
5 p.
|
artikel
|
| 56 |
Volume Contents for Volume 66
|
|
|
2002
|
66 |
3-4 |
p. I-VI
nvt p.
|
artikel
|
| 57 |
Water-repellency of a-C:H films deposited by rf plasma-enhanced CVD
|
Kim, Je-Deok
|
|
2002
|
66 |
3-4 |
p. 379-383
5 p.
|
artikel
|
| 58 |
What is the difference between catalytic CVD and plasma-enhanced CVD? Gas-phase kinetics and film properties
|
Masuda, Atsushi
|
|
2002
|
66 |
3-4 |
p. 293-297
5 p.
|
artikel
|
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