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                             27 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A cross layer approach for efficient thermal management in 3D stacked SoCs Jung, Matthias
2016
61 C p. 43-47
5 p.
artikel
2 A review on the humidity reliability of high power white light LEDs Singh, Preetpal
2016
61 C p. 129-139
11 p.
artikel
3 A step-accurate model for the trapping and release of charge carriers suitable for the transient simulation of analog circuits Habal, Husni
2016
61 C p. 17-23
7 p.
artikel
4 Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices Yu, Zhihui
2016
61 C p. 111-114
4 p.
artikel
5 Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes Ren, Jian
2016
61 C p. 82-86
5 p.
artikel
6 Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices Mei, Sen
2016
61 C p. 71-77
7 p.
artikel
7 Copper induced synthesis of graphene using amorphous carbon Narula, Udit
2016
61 C p. 87-90
4 p.
artikel
8 Design and optimization of LDMOS-SCR devices with improved ESD protection performance Liang, Hailian
2016
61 C p. 115-119
5 p.
artikel
9 Early degradation of high power packaged LEDs under humid conditions and its recovery — Myth of reliability rejuvenation Singh, Preetpal
2016
61 C p. 145-153
9 p.
artikel
10 Editorial Asenov, Asen
2016
61 C p. 1-2
2 p.
artikel
11 Editorial Board 2016
61 C p. IFC-
1 p.
artikel
12 Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack Feng, Xuan
2016
61 C p. 78-81
4 p.
artikel
13 Electrical properties of carbon nanotube via interconnects for 30nm linewidth and beyond Vyas, Anshul A.
2016
61 C p. 35-42
8 p.
artikel
14 FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies Karapetyan, Shushanik
2016
61 C p. 30-34
5 p.
artikel
15 Impact of temperature on linearity and harmonic distortion characteristics of underlapped FinFET Dutta, Arka
2016
61 C p. 99-105
7 p.
artikel
16 Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs Swain, Sanjit Kumar
2016
61 C p. 24-29
6 p.
artikel
17 Investigation on LDMOS-SCR with high holding current for high voltage ESD protection Liang, Hailian
2016
61 C p. 120-124
5 p.
artikel
18 MPSoC application resilience by hardware-assisted communication virtualization Rösch, S.
2016
61 C p. 11-16
6 p.
artikel
19 Non-destructive degradation study of copper wire bond for its temperature cycling reliability evaluation Chan, Marvin
2016
61 C p. 56-63
8 p.
artikel
20 Numerical study of microbump failure in 3D microelectronic structures Shen, Y.-L.
2016
61 C p. 48-55
8 p.
artikel
21 Reliability enhancement of zinc oxide varistors using sputtered silver electrodes Jin, Hao
2016
61 C p. 91-94
4 p.
artikel
22 Reliability study of 3D IC packaging based on through-silicon interposer (TSI) and silicon-less interconnection technology (SLIT) using finite element analysis Che, Fa Xing
2016
61 C p. 64-70
7 p.
artikel
23 Simulation and evaluation of the peak temperature in LED light bulb heatsink Sun, Lixia
2016
61 C p. 140-144
5 p.
artikel
24 Stress in three-dimensionally integrated sensor systems Filipovic, Lado
2016
61 C p. 3-10
8 p.
artikel
25 The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode Yu, D.Q.
2016
61 C p. 95-98
4 p.
artikel
26 300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology Zhang, Shuai
2016
61 C p. 125-128
4 p.
artikel
27 Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28nm processing Wang, Weihuai
2016
61 C p. 106-110
5 p.
artikel
                             27 gevonden resultaten
 
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