nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A cross layer approach for efficient thermal management in 3D stacked SoCs
|
Jung, Matthias |
|
2016 |
61 |
C |
p. 43-47 5 p. |
artikel |
2 |
A review on the humidity reliability of high power white light LEDs
|
Singh, Preetpal |
|
2016 |
61 |
C |
p. 129-139 11 p. |
artikel |
3 |
A step-accurate model for the trapping and release of charge carriers suitable for the transient simulation of analog circuits
|
Habal, Husni |
|
2016 |
61 |
C |
p. 17-23 7 p. |
artikel |
4 |
Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices
|
Yu, Zhihui |
|
2016 |
61 |
C |
p. 111-114 4 p. |
artikel |
5 |
Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes
|
Ren, Jian |
|
2016 |
61 |
C |
p. 82-86 5 p. |
artikel |
6 |
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices
|
Mei, Sen |
|
2016 |
61 |
C |
p. 71-77 7 p. |
artikel |
7 |
Copper induced synthesis of graphene using amorphous carbon
|
Narula, Udit |
|
2016 |
61 |
C |
p. 87-90 4 p. |
artikel |
8 |
Design and optimization of LDMOS-SCR devices with improved ESD protection performance
|
Liang, Hailian |
|
2016 |
61 |
C |
p. 115-119 5 p. |
artikel |
9 |
Early degradation of high power packaged LEDs under humid conditions and its recovery — Myth of reliability rejuvenation
|
Singh, Preetpal |
|
2016 |
61 |
C |
p. 145-153 9 p. |
artikel |
10 |
Editorial
|
Asenov, Asen |
|
2016 |
61 |
C |
p. 1-2 2 p. |
artikel |
11 |
Editorial Board
|
|
|
2016 |
61 |
C |
p. IFC- 1 p. |
artikel |
12 |
Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack
|
Feng, Xuan |
|
2016 |
61 |
C |
p. 78-81 4 p. |
artikel |
13 |
Electrical properties of carbon nanotube via interconnects for 30nm linewidth and beyond
|
Vyas, Anshul A. |
|
2016 |
61 |
C |
p. 35-42 8 p. |
artikel |
14 |
FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies
|
Karapetyan, Shushanik |
|
2016 |
61 |
C |
p. 30-34 5 p. |
artikel |
15 |
Impact of temperature on linearity and harmonic distortion characteristics of underlapped FinFET
|
Dutta, Arka |
|
2016 |
61 |
C |
p. 99-105 7 p. |
artikel |
16 |
Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs
|
Swain, Sanjit Kumar |
|
2016 |
61 |
C |
p. 24-29 6 p. |
artikel |
17 |
Investigation on LDMOS-SCR with high holding current for high voltage ESD protection
|
Liang, Hailian |
|
2016 |
61 |
C |
p. 120-124 5 p. |
artikel |
18 |
MPSoC application resilience by hardware-assisted communication virtualization
|
Rösch, S. |
|
2016 |
61 |
C |
p. 11-16 6 p. |
artikel |
19 |
Non-destructive degradation study of copper wire bond for its temperature cycling reliability evaluation
|
Chan, Marvin |
|
2016 |
61 |
C |
p. 56-63 8 p. |
artikel |
20 |
Numerical study of microbump failure in 3D microelectronic structures
|
Shen, Y.-L. |
|
2016 |
61 |
C |
p. 48-55 8 p. |
artikel |
21 |
Reliability enhancement of zinc oxide varistors using sputtered silver electrodes
|
Jin, Hao |
|
2016 |
61 |
C |
p. 91-94 4 p. |
artikel |
22 |
Reliability study of 3D IC packaging based on through-silicon interposer (TSI) and silicon-less interconnection technology (SLIT) using finite element analysis
|
Che, Fa Xing |
|
2016 |
61 |
C |
p. 64-70 7 p. |
artikel |
23 |
Simulation and evaluation of the peak temperature in LED light bulb heatsink
|
Sun, Lixia |
|
2016 |
61 |
C |
p. 140-144 5 p. |
artikel |
24 |
Stress in three-dimensionally integrated sensor systems
|
Filipovic, Lado |
|
2016 |
61 |
C |
p. 3-10 8 p. |
artikel |
25 |
The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode
|
Yu, D.Q. |
|
2016 |
61 |
C |
p. 95-98 4 p. |
artikel |
26 |
300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology
|
Zhang, Shuai |
|
2016 |
61 |
C |
p. 125-128 4 p. |
artikel |
27 |
Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28nm processing
|
Wang, Weihuai |
|
2016 |
61 |
C |
p. 106-110 5 p. |
artikel |