| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating
|
Efthymiou, E.
|
|
2016
|
58 |
C |
p. 26-32
7 p.
|
artikel
|
| 2 |
A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching
|
Raciti, Angelo
|
|
2016
|
58 |
C |
p. 3-11
9 p.
|
artikel
|
| 3 |
A simple 1-D finite elements approach to model the effect of PCB in electronic assemblies
|
Chiozzi, D.
|
|
2016
|
58 |
C |
p. 126-132
7 p.
|
artikel
|
| 4 |
Comparison of reliability impacts of two active power curtailment methods for PV micro-inverters
|
Gagrica, Ognjen
|
|
2016
|
58 |
C |
p. 133-140
8 p.
|
artikel
|
| 5 |
Comprehensive physical analysis of bond wire interfaces in power modules
|
Popok, Vladimir N.
|
|
2016
|
58 |
C |
p. 58-64
7 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2016
|
58 |
C |
p. IFC-
1 p.
|
artikel
|
| 7 |
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures
|
Peng, Zhaoyang
|
|
2016
|
58 |
C |
p. 192-196
5 p.
|
artikel
|
| 8 |
Electro-thermal simulation of current sharing in silicon and silicon carbide power modules under short circuit condition of types I and II
|
Suzuki, Hiroshi
|
|
2016
|
58 |
C |
p. 12-16
5 p.
|
artikel
|
| 9 |
Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation
|
Soelkner, Gerald
|
|
2016
|
58 |
C |
p. 39-50
12 p.
|
artikel
|
| 10 |
Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor
|
Sato, Soshi
|
|
2016
|
58 |
C |
p. 185-191
7 p.
|
artikel
|
| 11 |
How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies
|
Bensoussan, A.
|
|
2016
|
58 |
C |
p. 103-112
10 p.
|
artikel
|
| 12 |
Interface reliability and lifetime prediction of heavy aluminum wire bonds
|
Czerny, B.
|
|
2016
|
58 |
C |
p. 65-72
8 p.
|
artikel
|
| 13 |
Lifetime tests of 600-V GaN-on-Si power switches and HEMTs
|
Smith, K.V.
|
|
2016
|
58 |
C |
p. 197-203
7 p.
|
artikel
|
| 14 |
Modeling the threshold voltage instability in SiC MOSFETs by multiphonon-assisted tunneling
|
Kikuchi, Takuo
|
|
2016
|
58 |
C |
p. 33-38
6 p.
|
artikel
|
| 15 |
Modern IGBT gate driving methods for enhancing reliability of high-power converters — An overview
|
Luo, Haoze
|
|
2016
|
58 |
C |
p. 141-150
10 p.
|
artikel
|
| 16 |
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure
|
Meneghini, M.
|
|
2016
|
58 |
C |
p. 177-184
8 p.
|
artikel
|
| 17 |
Observer based dynamic adaptive cooling system for power modules
|
Wang, Xiang
|
|
2016
|
58 |
C |
p. 113-118
6 p.
|
artikel
|
| 18 |
On-state voltage drop based derating/uprating on a MW converter to improve reliability
|
Ghimire, P.
|
|
2016
|
58 |
C |
p. 90-94
5 p.
|
artikel
|
| 19 |
On the avalanche ruggedness of optimized termination structure for 600V punch-through IGBTs
|
Mirone, Paolo
|
|
2016
|
58 |
C |
p. 17-25
9 p.
|
artikel
|
| 20 |
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions
|
Ibrahim, A.
|
|
2016
|
58 |
C |
p. 204-210
7 p.
|
artikel
|
| 21 |
Reliability issues in power electronics
|
Iannuzzo, Francesco
|
|
2016
|
58 |
C |
p. 1-2
2 p.
|
artikel
|
| 22 |
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
|
Kusumoto, Osamu
|
|
2016
|
58 |
C |
p. 158-163
6 p.
|
artikel
|
| 23 |
Reliability of photovoltaic systems using seasonal mission profiles and the FIDES methodology
|
de Leon, Susana
|
|
2016
|
58 |
C |
p. 95-102
8 p.
|
artikel
|
| 24 |
Requirements in power cycling for precise lifetime estimation
|
Herold, Christian
|
|
2016
|
58 |
C |
p. 82-89
8 p.
|
artikel
|
| 25 |
SiC power MOSFETs performance, robustness and technology maturity
|
Castellazzi, A.
|
|
2016
|
58 |
C |
p. 164-176
13 p.
|
artikel
|
| 26 |
Study of reliability-efficiency tradeoff of active thermal control for power electronic systems
|
Andresen, Markus
|
|
2016
|
58 |
C |
p. 119-125
7 p.
|
artikel
|
| 27 |
Techniques for dynamic analysis of bonding wire
|
Saritas, R.
|
|
2016
|
58 |
C |
p. 73-81
9 p.
|
artikel
|
| 28 |
The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination
|
Rahimo, Munaf
|
|
2016
|
58 |
C |
p. 51-57
7 p.
|
artikel
|
| 29 |
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
|
Meneghesso, Gaudenzio
|
|
2016
|
58 |
C |
p. 151-157
7 p.
|
artikel
|
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