nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors
|
Mee, J.K. |
|
2011 |
51 |
6 |
p. 1113-1117 5 p. |
artikel |
2 |
Back-end soft and hard defect monitoring using a single test chip
|
Rigaud, Fabrice |
|
2011 |
51 |
6 |
p. 1136-1141 6 p. |
artikel |
3 |
Basic thermo-mechanical property estimation of a 3D-crosslinked epoxy/SiO2 interface using molecular modelling
|
Hölck, O. |
|
2011 |
51 |
6 |
p. 1027-1034 8 p. |
artikel |
4 |
Comparison of TID response in core, input/output and high voltage transistors for flash memory
|
Liu, Zhangli |
|
2011 |
51 |
6 |
p. 1148-1151 4 p. |
artikel |
5 |
Design and implementation of flexible and stretchable systems
|
Gonzalez, Mario |
|
2011 |
51 |
6 |
p. 1069-1076 8 p. |
artikel |
6 |
2010 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems
|
Wymysłowski, Artur |
|
2011 |
51 |
6 |
p. 1025-1026 2 p. |
artikel |
7 |
Extraction of elastic–plastic material properties of thin films through nanoindentaion technique with support of numerical methods
|
Dowhań, Łukasz |
|
2011 |
51 |
6 |
p. 1046-1053 8 p. |
artikel |
8 |
Inside front cover - Editorial board
|
|
|
2011 |
51 |
6 |
p. IFC- 1 p. |
artikel |
9 |
Investigation on hot-carrier-induced degradation of SOI NLIGBT
|
Zhang, Shifeng |
|
2011 |
51 |
6 |
p. 1097-1104 8 p. |
artikel |
10 |
Local stress analysis on semiconductor devices by combined experimental–numerical procedure
|
Kregting, Rene |
|
2011 |
51 |
6 |
p. 1092-1096 5 p. |
artikel |
11 |
Low-complexity Concurrent Error Detection for convolution with Fast Fourier Transforms
|
Bleakley, C.J. |
|
2011 |
51 |
6 |
p. 1152-1156 5 p. |
artikel |
12 |
Measuring time-dependent deformations in metallic MEMS
|
Bergers, L.I.J.C. |
|
2011 |
51 |
6 |
p. 1054-1059 6 p. |
artikel |
13 |
Mechanisms of deformation in high-ductility Ce-containing Sn–Ag–Cu solder alloys
|
Xie, H.X. |
|
2011 |
51 |
6 |
p. 1142-1147 6 p. |
artikel |
14 |
Modeling mechanical properties of an epoxy using particle dynamics, as parameterized through molecular modeling
|
Iwamoto, Nancy |
|
2011 |
51 |
6 |
p. 1035-1045 11 p. |
artikel |
15 |
Optimization for simulation of WL-CSP subjected to drop-test with plasticity behavior
|
Le Coq, Cédric |
|
2011 |
51 |
6 |
p. 1060-1068 9 p. |
artikel |
16 |
Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation
|
Bhattacherjee, Swagata |
|
2011 |
51 |
6 |
p. 1105-1112 8 p. |
artikel |
17 |
Reliability of thin ZrO2 gate dielectric layers
|
O’Connor, Robert |
|
2011 |
51 |
6 |
p. 1118-1122 5 p. |
artikel |
18 |
Spin polarization in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes
|
Lu, J.D. |
|
2011 |
51 |
6 |
p. 1123-1126 4 p. |
artikel |
19 |
Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique
|
Nguyen, T.A. |
|
2011 |
51 |
6 |
p. 1127-1135 9 p. |
artikel |
20 |
Toward comprehensive reliability assessment of electronics by a combined loading approach
|
Mattila, T.T. |
|
2011 |
51 |
6 |
p. 1077-1091 15 p. |
artikel |