no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Advantage of further scaling in gate dielectrics below 0.5nm of equivalent oxide thickness with La2O3 gate dielectrics
|
Kakushima, K. |
|
2010 |
50 |
6 |
p. 790-793 4 p. |
article |
2 |
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
|
Joh, Jungwoo |
|
2010 |
50 |
6 |
p. 767-773 7 p. |
article |
3 |
Calendar
|
|
|
2010 |
50 |
6 |
p. I-III nvt p. |
article |
4 |
Constant current stress-induced leakage current in mixed HfO2–Ta2O5 stacks
|
Atanassova, E. |
|
2010 |
50 |
6 |
p. 794-800 7 p. |
article |
5 |
Design of differential low-noise amplifier with cross-coupled-SCR ESD protection scheme
|
Lin, Chun-Yu |
|
2010 |
50 |
6 |
p. 831-838 8 p. |
article |
6 |
Determination of GaN HEMT reliability by monitoring I DSS
|
Pazirandeh, R. |
|
2010 |
50 |
6 |
p. 763-766 4 p. |
article |
7 |
Development of embedded piezoelectric acoustic sensor array architecture
|
Ghoshal, Anindya |
|
2010 |
50 |
6 |
p. 857-863 7 p. |
article |
8 |
Editorial
|
Ersland, Peter |
|
2010 |
50 |
6 |
p. 757- 1 p. |
article |
9 |
Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2–Si films
|
He, Bo-Ching |
|
2010 |
50 |
6 |
p. 851-856 6 p. |
article |
10 |
Functional fluid jetting performance optimization
|
Pekkanen, Ville |
|
2010 |
50 |
6 |
p. 864-871 8 p. |
article |
11 |
High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology
|
Chiu, Hsien-Chin |
|
2010 |
50 |
6 |
p. 847-850 4 p. |
article |
12 |
High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate
|
Demirtas, Sefa |
|
2010 |
50 |
6 |
p. 758-762 5 p. |
article |
13 |
Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances
|
Yuan, J.S. |
|
2010 |
50 |
6 |
p. 807-812 6 p. |
article |
14 |
Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions
|
Poklonski, N.A. |
|
2010 |
50 |
6 |
p. 813-820 8 p. |
article |
15 |
Inside front cover - Editorial board
|
|
|
2010 |
50 |
6 |
p. IFC- 1 p. |
article |
16 |
Intrinsic and extrinsic reliability of a serial connection of capacitors
|
Allers, K.-H. |
|
2010 |
50 |
6 |
p. 881-886 6 p. |
article |
17 |
Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-μm CMOS technology
|
Chen, Shih-Hung |
|
2010 |
50 |
6 |
p. 821-830 10 p. |
article |
18 |
Moisture effect on the dielectric and structure of BaTiO3-based devices
|
Wang, H.Y. |
|
2010 |
50 |
6 |
p. 887-890 4 p. |
article |
19 |
Novel analysis model for investigation of contact force and scrub length for design of probe card
|
Liu, De-Shin |
|
2010 |
50 |
6 |
p. 872-880 9 p. |
article |
20 |
Physically based models of electromigration: From Black’s equation to modern TCAD models
|
de Orio, R.L. |
|
2010 |
50 |
6 |
p. 775-789 15 p. |
article |
21 |
Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process
|
Wang, Mu-Chun |
|
2010 |
50 |
6 |
p. 839-846 8 p. |
article |
22 |
Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit
|
Yuan, J.S. |
|
2010 |
50 |
6 |
p. 801-806 6 p. |
article |