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                             18 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An investigation of Sn pest in pure Sn and Sn-based solders Peng, Weiqun
2009
49 1 p. 86-91
6 p.
artikel
2 A simple estimation of transverse response of high-g accelerometers by a free-drop-bar method Bao, Haifei
2009
49 1 p. 66-73
8 p.
artikel
3 A study on the performance and reliability of magnetostatic actuated RF MEMS switches Lin, Ta-Hsuan
2009
49 1 p. 59-65
7 p.
artikel
4 Calendar 2009
49 1 p. I-
1 p.
artikel
5 Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100nm metal–oxide–semiconductor transistors Lau, W.S.
2009
49 1 p. 1-7
7 p.
artikel
6 Experimental and numerical analysis of BGA lead-free solder joint reliability under board-level drop impact Liu, Fang
2009
49 1 p. 79-85
7 p.
artikel
7 Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity Born, V.
2009
49 1 p. 74-78
5 p.
artikel
8 Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors Wong, H.
2009
49 1 p. 13-16
4 p.
artikel
9 Influence of medical sterilization on ACA flip chip joints using conformal coating Kokko, Kati
2009
49 1 p. 92-98
7 p.
artikel
10 Inside front cover - Editorial board 2009
49 1 p. IFC-
1 p.
artikel
11 New substrate-triggered ESD protection structures in a 0.18-μm CMOS process without extra mask Shan, Yi
2009
49 1 p. 17-25
9 p.
artikel
12 Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors Muzykov, Peter G.
2009
49 1 p. 32-37
6 p.
artikel
13 Reliability assessment of 1.55-μm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests Rhew, Keun Ho
2009
49 1 p. 42-50
9 p.
artikel
14 RF device package method using Au to Au direct bonding technology Kwon, Sangwook
2009
49 1 p. 99-102
4 p.
artikel
15 Stability of thin film resistors – Prediction and differences base on time-dependent Arrhenius law Kuehl, Reiner W.
2009
49 1 p. 51-58
8 p.
artikel
16 Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium Rahman, M.S.
2009
49 1 p. 26-31
6 p.
artikel
17 Temperature-dependent light-emitting characteristics of InGaN/GaN diodes Liu, Jun
2009
49 1 p. 38-41
4 p.
artikel
18 Two-stage hot-carrier degradation behavior of 0.18μm 18V n-type DEMOS and its recovery effect Gao, Chao
2009
49 1 p. 8-12
5 p.
artikel
                             18 gevonden resultaten
 
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