| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A complete RF power technology assessment for military applications
|
Moreau, C.
|
|
2006
|
46 |
9-11 |
p. 1817-1822
6 p.
|
artikel
|
| 2 |
A 3D analysis technique for detecting trace metal contamination
|
Goto, Yasunori
|
|
2006
|
46 |
9-11 |
p. 1542-1547
6 p.
|
artikel
|
| 3 |
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements
|
Sozza, A.
|
|
2006
|
46 |
9-11 |
p. 1725-1730
6 p.
|
artikel
|
| 4 |
Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant
|
Alvarez, D.
|
|
2006
|
46 |
9-11 |
p. 1597-1602
6 p.
|
artikel
|
| 5 |
Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up
|
Heer, M.
|
|
2006
|
46 |
9-11 |
p. 1591-1596
6 p.
|
artikel
|
| 6 |
A new high-voltage tolerant I/O for improving ESD robustness
|
Jang, J.T.
|
|
2006
|
46 |
9-11 |
p. 1634-1637
4 p.
|
artikel
|
| 7 |
A new method to characterize the thermomechanical response of multilayered structures in power electronics
|
Zimprich, P.
|
|
2006
|
46 |
9-11 |
p. 1844-1847
4 p.
|
artikel
|
| 8 |
Application of various optical techniques for ESD defect localization
|
Essely, F.
|
|
2006
|
46 |
9-11 |
p. 1563-1568
6 p.
|
artikel
|
| 9 |
A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect
|
Wang, Robin C.J.
|
|
2006
|
46 |
9-11 |
p. 1673-1678
6 p.
|
artikel
|
| 10 |
ATPG scan logic failure analysis: a case study of logic ICs – fault isolation, defect mechanism identification and yield improvement
|
Gao, Liming
|
|
2006
|
46 |
9-11 |
p. 1458-1463
6 p.
|
artikel
|
| 11 |
author index - authors from this issue only
|
|
|
2006
|
46 |
9-11 |
p. I-III
nvt p.
|
artikel
|
| 12 |
Characterisation of IC packaging interfaces and loading effects
|
Yeo, H.C.
|
|
2006
|
46 |
9-11 |
p. 1892-1897
6 p.
|
artikel
|
| 13 |
Characterization of photonic devices by secondary electron potential contrast
|
Buzzo, M.
|
|
2006
|
46 |
9-11 |
p. 1536-1541
6 p.
|
artikel
|
| 14 |
Charging-Effects in RF capacitive switches influence of insulating layers composition
|
Lamhamdi, M.
|
|
2006
|
46 |
9-11 |
p. 1700-1704
5 p.
|
artikel
|
| 15 |
Charging of radiation induced defects in RF MEMS dielectric films
|
Exarchos, M.
|
|
2006
|
46 |
9-11 |
p. 1695-1699
5 p.
|
artikel
|
| 16 |
Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications
|
Castellazzi, A.
|
|
2006
|
46 |
9-11 |
p. 1754-1759
6 p.
|
artikel
|
| 17 |
Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node
|
Schlangen, R.
|
|
2006
|
46 |
9-11 |
p. 1498-1503
6 p.
|
artikel
|
| 18 |
Contents - take from IPS
|
|
|
2006
|
46 |
9-11 |
p. iii-viii
nvt p.
|
artikel
|
| 19 |
Defect detection in multilayer ceramic capacitors
|
Krieger, V.
|
|
2006
|
46 |
9-11 |
p. 1926-1931
6 p.
|
artikel
|
| 20 |
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors
|
Danesin, Francesca
|
|
2006
|
46 |
9-11 |
p. 1750-1753
4 p.
|
artikel
|
| 21 |
Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress
|
Gerardin, S.
|
|
2006
|
46 |
9-11 |
p. 1669-1672
4 p.
|
artikel
|
| 22 |
Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions
|
Yuan, C.
|
|
2006
|
46 |
9-11 |
p. 1679-1684
6 p.
|
artikel
|
| 23 |
Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards
|
DeNardi, C.
|
|
2006
|
46 |
9-11 |
p. 1569-1574
6 p.
|
artikel
|
| 24 |
Designing in reliability in advanced CMOS technologies
|
Parthasarathy, C.R.
|
|
2006
|
46 |
9-11 |
p. 1464-1471
8 p.
|
artikel
|
| 25 |
Development of highly accelerated electromigration test
|
Tan, Cher Ming
|
|
2006
|
46 |
9-11 |
p. 1638-1642
5 p.
|
artikel
|
| 26 |
Device level electrical-thermal-stress coupled-field modeling
|
Huang, Guang Yu
|
|
2006
|
46 |
9-11 |
p. 1823-1827
5 p.
|
artikel
|
| 27 |
Dynamic voltage stress effects on nMOS varactor
|
Yu, Chuanzhao
|
|
2006
|
46 |
9-11 |
p. 1812-1816
5 p.
|
artikel
|
| 28 |
Editorial
|
Balk, L.J.
|
|
2006
|
46 |
9-11 |
p. 1401-1402
2 p.
|
artikel
|
| 29 |
Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode
|
Irace, A.
|
|
2006
|
46 |
9-11 |
p. 1784-1789
6 p.
|
artikel
|
| 30 |
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling
|
Dupont, L.
|
|
2006
|
46 |
9-11 |
p. 1766-1771
6 p.
|
artikel
|
| 31 |
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests
|
Belaïd, M.A.
|
|
2006
|
46 |
9-11 |
p. 1800-1805
6 p.
|
artikel
|
| 32 |
Electrical steering of vehicles - fault-tolerant analysis and design
|
Blanke, Mogens
|
|
2006
|
46 |
9-11 |
p. 1421-1432
12 p.
|
artikel
|
| 33 |
Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps
|
Miyazaki, Toru
|
|
2006
|
46 |
9-11 |
p. 1898-1903
6 p.
|
artikel
|
| 34 |
Electromigration failure distributions of dual damascene Cu /low – k interconnects
|
Oates, A.S.
|
|
2006
|
46 |
9-11 |
p. 1581-1586
6 p.
|
artikel
|
| 35 |
Electromigration lifetimes and void growth at low cumulative failure probability
|
Tsuchiya, Hideaki
|
|
2006
|
46 |
9-11 |
p. 1415-1420
6 p.
|
artikel
|
| 36 |
Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development
|
Courtas, S.
|
|
2006
|
46 |
9-11 |
p. 1530-1535
6 p.
|
artikel
|
| 37 |
Electro-thermal short pulsed simulation for SOI technology
|
Entringer, Christophe
|
|
2006
|
46 |
9-11 |
p. 1482-1485
4 p.
|
artikel
|
| 38 |
ESD protection structure qualification – a new approach for release for automotive applications
|
Goroll, M.
|
|
2006
|
46 |
9-11 |
p. 1648-1651
4 p.
|
artikel
|
| 39 |
ESD Susceptibility of Submicron Air Gaps
|
Wolf, Heinrich
|
|
2006
|
46 |
9-11 |
p. 1587-1590
4 p.
|
artikel
|
| 40 |
Evaluation of scanning capacitance microscopy sample preparation by focused ion beam
|
Rodriguez, N.
|
|
2006
|
46 |
9-11 |
p. 1554-1557
4 p.
|
artikel
|
| 41 |
Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect
|
Roy, Arijit
|
|
2006
|
46 |
9-11 |
p. 1652-1656
5 p.
|
artikel
|
| 42 |
Experimental study of power MOSFET’s gate damage in radiation environment
|
Busatto, G.
|
|
2006
|
46 |
9-11 |
p. 1854-1857
4 p.
|
artikel
|
| 43 |
Failure analyses for debug and ramp-up of modern IC’s
|
Burmer, Christian
|
|
2006
|
46 |
9-11 |
p. 1486-1497
12 p.
|
artikel
|
| 44 |
Failure Analysis-assisted FMEA
|
Cassanelli, G.
|
|
2006
|
46 |
9-11 |
p. 1795-1799
5 p.
|
artikel
|
| 45 |
Failure mechanism of trench IGBT under short-circuit after turn-off
|
Benmansour, A.
|
|
2006
|
46 |
9-11 |
p. 1778-1783
6 p.
|
artikel
|
| 46 |
Fault diagnosis technology based on transistor behavior analysis for physical analysis
|
Sanada, M.
|
|
2006
|
46 |
9-11 |
p. 1575-1580
6 p.
|
artikel
|
| 47 |
FinFET and MOSFET preliminary comparison of gate oxide reliability
|
Fernández, R.
|
|
2006
|
46 |
9-11 |
p. 1608-1611
4 p.
|
artikel
|
| 48 |
Gamma radiation effects on RF MEMS capacitive switches
|
Crunteanu, A.
|
|
2006
|
46 |
9-11 |
p. 1741-1746
6 p.
|
artikel
|
| 49 |
Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides
|
Pompl, T.
|
|
2006
|
46 |
9-11 |
p. 1603-1607
5 p.
|
artikel
|
| 50 |
High brightness GaN LEDs degradation during dc and pulsed stress
|
Meneghini, M.
|
|
2006
|
46 |
9-11 |
p. 1720-1724
5 p.
|
artikel
|
| 51 |
High power reliability aspects on RF MEMS varactor design
|
Palego, C.
|
|
2006
|
46 |
9-11 |
p. 1705-1710
6 p.
|
artikel
|
| 52 |
Hot-carrier degradation analysis based on ring oscillators
|
Wang, Jingchao
|
|
2006
|
46 |
9-11 |
p. 1858-1863
6 p.
|
artikel
|
| 53 |
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs
|
Rafí, J.M.
|
|
2006
|
46 |
9-11 |
p. 1657-1663
7 p.
|
artikel
|
| 54 |
Hot carrier reliability of RF N- LDMOS for S Band radar application
|
Gares, M.
|
|
2006
|
46 |
9-11 |
p. 1806-1811
6 p.
|
artikel
|
| 55 |
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation
|
Hayama, K.
|
|
2006
|
46 |
9-11 |
p. 1731-1735
5 p.
|
artikel
|
| 56 |
Improved physical understanding of intermittent failure in continuous monitoring method
|
Filho, W.C. Maia
|
|
2006
|
46 |
9-11 |
p. 1886-1891
6 p.
|
artikel
|
| 57 |
Improving performance and reliability of NOR-Flash arrays by using pulsed operation
|
Chimenton, A.
|
|
2006
|
46 |
9-11 |
p. 1478-1481
4 p.
|
artikel
|
| 58 |
Initial stage of silver electrochemical migration degradation
|
Yang, S.
|
|
2006
|
46 |
9-11 |
p. 1915-1921
7 p.
|
artikel
|
| 59 |
Intrinsic bonding defects in transition metal elemental oxides
|
Lucovsky, G.
|
|
2006
|
46 |
9-11 |
p. 1623-1628
6 p.
|
artikel
|
| 60 |
Investigation of MOSFET failure in soft-switching conditions
|
Iannuzzo, F.
|
|
2006
|
46 |
9-11 |
p. 1790-1794
5 p.
|
artikel
|
| 61 |
Kelvin probe force microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
|
Bergbauer, W.
|
|
2006
|
46 |
9-11 |
p. 1736-1740
5 p.
|
artikel
|
| 62 |
Localization and physical analysis of a complex SRAM failure in 90nm technology
|
Qian, Zhongling
|
|
2006
|
46 |
9-11 |
p. 1558-1562
5 p.
|
artikel
|
| 63 |
Lock-in thermal IR imaging using a solid immersion lens
|
Breitenstein, O.
|
|
2006
|
46 |
9-11 |
p. 1508-1513
6 p.
|
artikel
|
| 64 |
Modern IC packaging trends and their reliability implications
|
Plieninger, R.
|
|
2006
|
46 |
9-11 |
p. 1868-1873
6 p.
|
artikel
|
| 65 |
Multiscale modelling of multilayer substrates
|
Ubachs, R.L.J.M.
|
|
2006
|
46 |
9-11 |
p. 1472-1477
6 p.
|
artikel
|
| 66 |
NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs
|
Danković, D.
|
|
2006
|
46 |
9-11 |
p. 1828-1833
6 p.
|
artikel
|
| 67 |
New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors
|
Lee, In Kyung
|
|
2006
|
46 |
9-11 |
p. 1864-1867
4 p.
|
artikel
|
| 68 |
New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions
|
Barlini, D.
|
|
2006
|
46 |
9-11 |
p. 1772-1777
6 p.
|
artikel
|
| 69 |
Novel ESD strategy for high voltage non-volatile programming pin application
|
Im, Kyoung-Sik
|
|
2006
|
46 |
9-11 |
p. 1664-1668
5 p.
|
artikel
|
| 70 |
Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity
|
Altes, A.
|
|
2006
|
46 |
9-11 |
p. 1525-1529
5 p.
|
artikel
|
| 71 |
Part average analysis – A tool for reducing failure rates in automotive electronics
|
Wagner, M.
|
|
2006
|
46 |
9-11 |
p. 1433-1438
6 p.
|
artikel
|
| 72 |
Pb-free high temperature solders for power device packaging
|
Yamada, Y.
|
|
2006
|
46 |
9-11 |
p. 1932-1937
6 p.
|
artikel
|
| 73 |
Physical-to-Logical Mapping of Emission Data using Place-and-Route
|
Nicholson, R.A.
|
|
2006
|
46 |
9-11 |
p. 1548-1553
6 p.
|
artikel
|
| 74 |
Post-breakdown leakage resistance and its dependence on device area
|
Chen, Tze Wee
|
|
2006
|
46 |
9-11 |
p. 1612-1616
5 p.
|
artikel
|
| 75 |
Power cycling tests for accelerated ageing of ultracapacitors
|
Briat, O.
|
|
2006
|
46 |
9-11 |
p. 1445-1450
6 p.
|
artikel
|
| 76 |
Progress in reliability research in the micro and nano region
|
Wunderle, B.
|
|
2006
|
46 |
9-11 |
p. 1685-1694
10 p.
|
artikel
|
| 77 |
Prospects on Mn-doped ZnGeP2 for spintronics
|
Krivosheeva, A.V.
|
|
2006
|
46 |
9-11 |
p. 1747-1749
3 p.
|
artikel
|
| 78 |
Read disturb in flash memories: reliability case
|
Tanduo, P.
|
|
2006
|
46 |
9-11 |
p. 1439-1444
6 p.
|
artikel
|
| 79 |
Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs
|
Salm, C.
|
|
2006
|
46 |
9-11 |
p. 1617-1622
6 p.
|
artikel
|
| 80 |
Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection
|
Ispasoiu, Radu
|
|
2006
|
46 |
9-11 |
p. 1504-1507
4 p.
|
artikel
|
| 81 |
Reliability and wearout characterisation of LEDs
|
Jacob, P.
|
|
2006
|
46 |
9-11 |
p. 1711-1714
4 p.
|
artikel
|
| 82 |
Reliability challenges in the nanoelectronics era
|
van Roosmalen, A.J.
|
|
2006
|
46 |
9-11 |
p. 1403-1414
12 p.
|
artikel
|
| 83 |
Reliability estimation of aeronautic component by accelerated tests
|
Charruau, S.
|
|
2006
|
46 |
9-11 |
p. 1451-1457
7 p.
|
artikel
|
| 84 |
Reliability modelling for packages in flexible end-products
|
van Driel, W.D.
|
|
2006
|
46 |
9-11 |
p. 1880-1885
6 p.
|
artikel
|
| 85 |
Reliability of high temperature solder alternatives
|
McCluskey, F.P.
|
|
2006
|
46 |
9-11 |
p. 1910-1914
5 p.
|
artikel
|
| 86 |
Strong electron irradiation hardness of 852 nm Al-free laser diodes
|
Boutillier, M.
|
|
2006
|
46 |
9-11 |
p. 1715-1719
5 p.
|
artikel
|
| 87 |
Structural reliability assessment of multi-stack package (MSP) under high temperature storage (HTS) testing condition
|
Yang, S.Y.
|
|
2006
|
46 |
9-11 |
p. 1904-1909
6 p.
|
artikel
|
| 88 |
Study of performance degradations in DC-DC converter due to hot carrier stress by simulation
|
Yu, C.
|
|
2006
|
46 |
9-11 |
p. 1840-1843
4 p.
|
artikel
|
| 89 |
Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current
|
Perpiñà, X.
|
|
2006
|
46 |
9-11 |
p. 1834-1839
6 p.
|
artikel
|
| 90 |
The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics
|
Lloyd, J.R.
|
|
2006
|
46 |
9-11 |
p. 1643-1647
5 p.
|
artikel
|
| 91 |
The high frequency behaviour of high voltage and current IGBT modules
|
Abbate, C.
|
|
2006
|
46 |
9-11 |
p. 1848-1853
6 p.
|
artikel
|
| 92 |
Thermal characterization and modeling of power hybrid converters for distributed power systems
|
Cova, P.
|
|
2006
|
46 |
9-11 |
p. 1760-1765
6 p.
|
artikel
|
| 93 |
The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis
|
Yew, M.C.
|
|
2006
|
46 |
9-11 |
p. 1874-1879
6 p.
|
artikel
|
| 94 |
Time gating imaging through thick silicon substrate: a new step towards backside characterisation
|
Rampnoux, J.M.
|
|
2006
|
46 |
9-11 |
p. 1520-1524
5 p.
|
artikel
|
| 95 |
Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation
|
Douin, A.
|
|
2006
|
46 |
9-11 |
p. 1514-1519
6 p.
|
artikel
|
| 96 |
Transient-induced latch-up test setup for wafer-level and package-level
|
Bonfert, D.
|
|
2006
|
46 |
9-11 |
p. 1629-1633
5 p.
|
artikel
|
| 97 |
Use of signal processing imaging for the study of a 3D package in harsh environment
|
Augereau, Jean
|
|
2006
|
46 |
9-11 |
p. 1922-1925
4 p.
|
artikel
|
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