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                             62 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comprehensive model for oxide degradation Irrera, Fernanda
 2005
 45 5-6 p. 853-856
4 p.
 artikel
2 Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2 Truong, L.
 2005
 45 5-6 p. 823-826
4 p.
 artikel
3 AVD® technology for deposition of next generation devices Weber, U.
 2005
 45 5-6 p. 945-948
4 p.
 artikel
4 Bond strain and defects at interfaces in high-k gate stacks Lucovsky, G.
 2005
 45 5-6 p. 770-778
9 p.
 artikel
5 Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced—CAFM Blasco, X.
 2005
 45 5-6 p. 811-814
4 p.
 artikel
6 Challenges for dielectric materials in future integrated circuit technologies Garner, C.M.
 2005
 45 5-6 p. 919-924
6 p.
 artikel
7 Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100) Sibai, A.
 2005
 45 5-6 p. 941-944
4 p.
 artikel
8 Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200°C Vasilopoulou, M.
 2005
 45 5-6 p. 990-993
4 p.
 artikel
9 Charge storage peculiarities in poly-Si–SiO2–Si memory devices with Si nanocrystals rich SiO2 Turchanikov, V.I.
 2005
 45 5-6 p. 903-906
4 p.
 artikel
10 Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides Zander, D.
 2005
 45 5-6 p. 891-894
4 p.
 artikel
11 Comparison of metal gate electrodes on MOCVD HfO2 Lemme, M.C.
 2005
 45 5-6 p. 953-956
4 p.
 artikel
12 Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Lucovsky, G.
 2005
 45 5-6 p. 827-830
4 p.
 artikel
13 Crested barrier in the tunnel stack of non-volatile memories Irrera, Fernanda
 2005
 45 5-6 p. 907-910
4 p.
 artikel
14 Dielectric properties of two phases of crystalline lutetium oxide Delugas, Pietro
 2005
 45 5-6 p. 831-833
3 p.
 artikel
15 Dynamic Fowler–Nordheim injection in EEPROM tunnel oxides at realistic time scales Baboux, N.
 2005
 45 5-6 p. 911-914
4 p.
 artikel
16 Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition Dueñas, S.
 2005
 45 5-6 p. 949-952
4 p.
 artikel
17 Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD Decams, J.M.
 2005
 45 5-6 p. 929-932
4 p.
 artikel
18 Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films Wang, Ming-Tsong
 2005
 45 5-6 p. 969-972
4 p.
 artikel
19 Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors Deloffre, E.
 2005
 45 5-6 p. 925-928
4 p.
 artikel
20 Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor Lemberger, Martin
 2005
 45 5-6 p. 819-822
4 p.
 artikel
21 Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric Chiu, Fu-Chien
 2005
 45 5-6 p. 961-964
4 p.
 artikel
22 Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics Mikhelashvili, V.
 2005
 45 5-6 p. 933-936
4 p.
 artikel
23 Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown Ribes, G.
 2005
 45 5-6 p. 841-844
4 p.
 artikel
24 Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology Capodieci, V.
 2005
 45 5-6 p. 937-940
4 p.
 artikel
25 Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides Trapes, C.
 2005
 45 5-6 p. 883-886
4 p.
 artikel
26 Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy Yang, J.
 2005
 45 5-6 p. 887-890
4 p.
 artikel
27 Impact of interface and bulk trapped charges on transistor reliability Ghidini, G.
 2005
 45 5-6 p. 857-860
4 p.
 artikel
28 Impact of nitrogen incorporation on interface states in (100)Si/HfO2 Fedorenko, Y.G.
 2005
 45 5-6 p. 802-805
4 p.
 artikel
29 Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development Beckx, S.
 2005
 45 5-6 p. 1007-1011
5 p.
 artikel
30 Improved charge injection in Si nanocrystal non-volatile memories Carreras, Josep
 2005
 45 5-6 p. 899-902
4 p.
 artikel
31 Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric Spitale, E.
 2005
 45 5-6 p. 895-898
4 p.
 artikel
32 Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics Fernández, R.
 2005
 45 5-6 p. 861-864
4 p.
 artikel
33 Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4 +O2 Vamvakas, V.Em.
 2005
 45 5-6 p. 986-989
4 p.
 artikel
34 In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability Langenbuch, M.
 2005
 45 5-6 p. 875-878
4 p.
 artikel
35 Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range Prendergast, James
 2005
 45 5-6 p. 973-977
5 p.
 artikel
36 Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS Barletta, Giacomo
 2005
 45 5-6 p. 994-999
6 p.
 artikel
37 Light emission from Si/SiO2 superlattices fabricated by RPECVD Rölver, R.
 2005
 45 5-6 p. 915-918
4 p.
 artikel
38 LPCVD-silicon oxynitride films: interface properties Halova, E.
 2005
 45 5-6 p. 982-985
4 p.
 artikel
39 Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance Lujan, G.S.
 2005
 45 5-6 p. 794-797
4 p.
 artikel
40 [No title] Stojcev, Mile
 2005
 45 5-6 p. 1017-1018
2 p.
 artikel
41 [No title] Stojcev, Mile
 2005
 45 5-6 p. 1019-1020
2 p.
 artikel
42 [No title] Hurley, Paul
 2005
 45 5-6 p. 767-769
3 p.
 artikel
43 [No title] Stojcev, Mile
 2005
 45 5-6 p. 1012-1013
2 p.
 artikel
44 [No title] Stojcev, Mile
 2005
 45 5-6 p. 1014-1016
3 p.
 artikel
45 Observation and characterization of defects in HfO2 high-K gate dielectric layers Kaushik, Vidya
 2005
 45 5-6 p. 798-801
4 p.
 artikel
46 On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers Pétry, J.
 2005
 45 5-6 p. 815-818
4 p.
 artikel
47 On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiN x /SiO2/Si fabricated by ECR-CVD Dueñas, S.
 2005
 45 5-6 p. 978-981
4 p.
 artikel
48 On the SILC mechanism in MOSFET’s with ultrathin oxides Bauza, D.
 2005
 45 5-6 p. 849-852
4 p.
 artikel
49 Optical and electrical characterization of hafnium oxide deposited by MOCVD Lu, Y.
 2005
 45 5-6 p. 965-968
4 p.
 artikel
50 Optimization of low temperature silicon nitride processes for improvement of device performance Sleeckx, E.
 2005
 45 5-6 p. 865-868
4 p.
 artikel
51 Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors Schram, T.
 2005
 45 5-6 p. 779-782
4 p.
 artikel
52 Post deposition UV-induced O2 annealing of HfO2 thin films Fang, Q.
 2005
 45 5-6 p. 957-960
4 p.
 artikel
53 Potential remedies for the V T/V fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey Deweerd, W.
 2005
 45 5-6 p. 786-789
4 p.
 artikel
54 Probing stress effects in HfO2 gate stacks with time dependent measurements Young, Chadwin D.
 2005
 45 5-6 p. 806-810
5 p.
 artikel
55 Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics Schwalke, Udo
 2005
 45 5-6 p. 790-793
4 p.
 artikel
56 Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance O’Connor, Robert
 2005
 45 5-6 p. 869-874
6 p.
 artikel
57 Reliability of gate dielectrics and metal–insulator–metal capacitors Martin, Andreas
 2005
 45 5-6 p. 834-840
7 p.
 artikel
58 Reverse short channel effects in high-k gated nMOSFETs Han, J.-P.
 2005
 45 5-6 p. 783-785
3 p.
 artikel
59 Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing Pecora, A.
 2005
 45 5-6 p. 879-882
4 p.
 artikel
60 Structure of the oxide damage under progressive breakdown Palumbo, F.
 2005
 45 5-6 p. 845-848
4 p.
 artikel
61 The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors Juan, P.C.
 2005
 45 5-6 p. 1003-1006
4 p.
 artikel
62 Vapour pressure measurement of low volatility precursors Rushworth, S.A.
 2005
 45 5-6 p. 1000-1002
3 p.
 artikel
                             62 gevonden resultaten
 
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