nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors
|
De Souza, M.M. |
|
2001 |
41 |
2 |
p. 169-177 9 p. |
artikel |
2 |
A generalized model for the lifetime of microelectronic components, applied to storage conditions
|
Wise, Loren J |
|
2001 |
41 |
2 |
p. 317-322 6 p. |
artikel |
3 |
Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs
|
Hsu, C.T |
|
2001 |
41 |
2 |
p. 201-209 9 p. |
artikel |
4 |
An investigation of the mechanical behavior of conductive elastomer interconnects
|
Xie, Jingsong |
|
2001 |
41 |
2 |
p. 281-286 6 p. |
artikel |
5 |
Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy
|
Lamb, A.C |
|
2001 |
41 |
2 |
p. 273-279 7 p. |
artikel |
6 |
Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems
|
Harsányi, Gábor |
|
2001 |
41 |
2 |
p. 229-237 9 p. |
artikel |
7 |
Design issues of a three-dimensional packaging scheme for power modules
|
Haque, Shatil |
|
2001 |
41 |
2 |
p. 295-305 11 p. |
artikel |
8 |
Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions
|
Schuster, Constance E. |
|
2001 |
41 |
2 |
p. 239-252 14 p. |
artikel |
9 |
Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture
|
Militaru, L |
|
2001 |
41 |
2 |
p. 253-263 11 p. |
artikel |
10 |
Investigation of the surface silica layer on porous poly-Si thin films
|
Wong, H |
|
2001 |
41 |
2 |
p. 179-184 6 p. |
artikel |
11 |
Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect
|
Bubennikov, Alexander N |
|
2001 |
41 |
2 |
p. 219-228 10 p. |
artikel |
12 |
Low-frequency noise in single–poly bipolar transistors at low base current density
|
Valdaperez, Nicolas |
|
2001 |
41 |
2 |
p. 265-271 7 p. |
artikel |
13 |
Module allocation with idle-time utilization for on-line testability
|
Ismaeel, A.A. |
|
2001 |
41 |
2 |
p. 323-332 10 p. |
artikel |
14 |
Neutron-induced 10B fission as a major source of soft errors in high density SRAMs
|
Baumann, Robert C. |
|
2001 |
41 |
2 |
p. 211-218 8 p. |
artikel |
15 |
Reliability aspects of thermal micro-structures implemented on industrial 0.8 μm CMOS chips
|
Sheng, L.Y |
|
2001 |
41 |
2 |
p. 307-315 9 p. |
artikel |
16 |
Semiconductor devices for RF applications: evolution and current status
|
Schwierz, F. |
|
2001 |
41 |
2 |
p. 145-168 24 p. |
artikel |
17 |
Study of micro-BGA solder joint reliability
|
Tu, P.L |
|
2001 |
41 |
2 |
p. 287-293 7 p. |
artikel |
18 |
Unifying the thermal–chemical and anode-hole-injection gate-oxide breakdown models
|
Cheung, Kin P. |
|
2001 |
41 |
2 |
p. 193-199 7 p. |
artikel |
19 |
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages
|
Levin, M.N |
|
2001 |
41 |
2 |
p. 185-191 7 p. |
artikel |