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                             80 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accurate determination of composition and bonding probabilities in plasma enhanced chemical vapour deposition amorphous silicon oxide Moreno, J.A
 2000
 40 4-5 p. 609-612
4 p.
 artikel
2 A new MOD method to prepare Sr0.7Bi2.2Ta2O9 ferroelectric films for non-volatile RAM memories Tejedor, P
 2000
 40 4-5 p. 683-686
4 p.
 artikel
3 Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture Viana, C.E
 2000
 40 4-5 p. 613-616
4 p.
 artikel
4 Anodic passivation of SiGe Rappich, J
 2000
 40 4-5 p. 825-827
3 p.
 artikel
5 A novel method for the deposition of Si–SiO2 superlattices Gourbilleau, F
 2000
 40 4-5 p. 889-892
4 p.
 artikel
6 A recombination model for transient and stationary stress-induced leakage current Ielmini, D
 2000
 40 4-5 p. 703-706
4 p.
 artikel
7 A software for optical characterization of thin films for microelectronic applications Leinfellner, N
 2000
 40 4-5 p. 873-875
3 p.
 artikel
8 Assessing oxide reliability targets with fast WLR measurements Martin, Andreas
 2000
 40 4-5 p. 731-734
4 p.
 artikel
9 Atomically smooth ultrathin oxide on Si(113) Müssig, H.-J
 2000
 40 4-5 p. 577-579
3 p.
 artikel
10 Boron penetration effect on gate oxide reliability of 50 Å PMOS devices Kyono, Carl
 2000
 40 4-5 p. 637-640
4 p.
 artikel
11 Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs Cassan, E
 2000
 40 4-5 p. 585-588
4 p.
 artikel
12 Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling Clerc, R
 2000
 40 4-5 p. 571-575
5 p.
 artikel
13 Cell array structure test in EEPROM reliability assessment at an early process development stage Pio, F
 2000
 40 4-5 p. 719-722
4 p.
 artikel
14 Channel distribution of generated interface states in 0.35 μm LDD nMOSFET Buiu, O.
 2000
 40 4-5 p. 727-730
4 p.
 artikel
15 Characteristic photoluminescence band in Si+-implanted SiO2 grown on Si wafer Iwayama, T.S.
 2000
 40 4-5 p. 849-854
6 p.
 artikel
16 Characteristics of MIS capacitors based on multilayer TiO2–Ta2O5 structures Mikhelashvili, V
 2000
 40 4-5 p. 657-658
2 p.
 artikel
17 Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films Wuu, D.S
 2000
 40 4-5 p. 663-666
4 p.
 artikel
18 Comparison of oxide leakage currents induced by ion implantation and high field electric stress Goguenheim, D
 2000
 40 4-5 p. 751-754
4 p.
 artikel
19 Conduction properties of breakdown paths in ultrathin gate oxides Miranda, E
 2000
 40 4-5 p. 687-690
4 p.
 artikel
20 Determination of the electrical properties of thermally grown ultrathin nitride films Pic, N
 2000
 40 4-5 p. 589-592
4 p.
 artikel
21 Dielectric and photoluminescence properties of silicon nanoparticles embedded in a silica matrix Charvet, S
 2000
 40 4-5 p. 855-858
4 p.
 artikel
22 Effect of implantation and annealing conditions on the photoluminescence emission of Si nanocrystals ion beam synthesised in SiO2 Lopez, M
 2000
 40 4-5 p. 859-862
4 p.
 artikel
23 Effect of macrostructure and composition of the top metal electrode on properties of MIS gas sensors Litovchenko, V.G
 2000
 40 4-5 p. 821-824
4 p.
 artikel
24 Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs Lysenko, V.S
 2000
 40 4-5 p. 735-738
4 p.
 artikel
25 Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors Lysenko, V.S
 2000
 40 4-5 p. 799-802
4 p.
 artikel
26 Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films Horng, R.H
 2000
 40 4-5 p. 667-670
4 p.
 artikel
27 Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films Leu, Ching-Chich
 2000
 40 4-5 p. 679-682
4 p.
 artikel
28 Electrical characterisation of oxides grown in different RTP ambients Brazzelli, D
 2000
 40 4-5 p. 641-644
4 p.
 artikel
29 Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H–SiC Berberich, S
 2000
 40 4-5 p. 833-836
4 p.
 artikel
30 Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress Dueñas, S
 2000
 40 4-5 p. 659-662
4 p.
 artikel
31 Electrical characterization of low permittivity materials for ULSI inter-metal-insulation Cluzel, J
 2000
 40 4-5 p. 675-678
4 p.
 artikel
32 Epitaxial ferroelectric PbZr x Ti1– x O3 thin films for non-volatile memory applications Guerrero, C
 2000
 40 4-5 p. 671-674
4 p.
 artikel
33 Flicker noise spectroscopy – a new method of studying non-stationary effects in electrical conductivity of oxides Parkhutik, V.
 2000
 40 4-5 p. 601-604
4 p.
 artikel
34 Fundamental modification of gate silicon dioxide layer as a result of lateral gettering of electrically active centres Uritsky, V.Ya.
 2000
 40 4-5 p. 767-770
4 p.
 artikel
35 Growth of well-ordered silicon dioxide films on Mo(112) Schroeder, T
 2000
 40 4-5 p. 841-844
4 p.
 artikel
36 Hole traps and charges in ion implanted MOS capacitors: sensitivity to ionizing radiation Sabaté, N.
 2000
 40 4-5 p. 803-806
4 p.
 artikel
37 Hot-carrier reliability in deep-submicrometer LATID NMOSFETs Rafı́, J.M
 2000
 40 4-5 p. 743-746
4 p.
 artikel
38 Influence of interfaces on electrical characteristics formation in monocrystalline silicon–noncrystalline ultrathin oxide – polycrystalline silicon structures Uritsky, V.Ya.
 2000
 40 4-5 p. 605-608
4 p.
 artikel
39 Interface properties of the Si(100)–SiO2 system formed by rapid thermal oxidation O’Sullivan, B.J
 2000
 40 4-5 p. 645-648
4 p.
 artikel
40 Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiN x :H/InP and Al/SiN x :H/In0.53Ga0.47As structures by DLTS and conductance transient techniques Castán, H
 2000
 40 4-5 p. 845-848
4 p.
 artikel
41 Internal photoemission in the MOS system at low electric fields in the dielectric. Model and applications Przewlocki, H.M
 2000
 40 4-5 p. 581-584
4 p.
 artikel
42 Low temperature photoformation of tantalum oxide Boyd, Ian W
 2000
 40 4-5 p. 649-655
7 p.
 artikel
43 Macroscopic dielectric response of the metallic particles embedded in host dielectric medium Grechko, L.G.
 2000
 40 4-5 p. 893-895
3 p.
 artikel
44 Microstructure and electrical properties of gate SiO2 containing Ge nanoclusters for memory applications Thees, H.-J
 2000
 40 4-5 p. 867-871
5 p.
 artikel
45 New experiments on the electrodeposition of iron in porous silicon Renaux, C
 2000
 40 4-5 p. 877-879
3 p.
 artikel
46 [No title] Garrido, Blas
 2000
 40 4-5 p. 555-
1 p.
 artikel
47 Novel applications of organic based thin film transistors Torsi, Luisa
 2000
 40 4-5 p. 779-782
4 p.
 artikel
48 N2 remote plasma cleaning of InP to improve SiN x :H/InP interface performance Redondo, E
 2000
 40 4-5 p. 837-840
4 p.
 artikel
49 On stress induced leakage current in 5 and 3 nm thick oxides Meinertzhagen, A
 2000
 40 4-5 p. 711-714
4 p.
 artikel
50 On the initial temporal current characteristics of thin oxide devices depending on constant voltage pulse sequences Zahlmann-Nowitzki, J.-W
 2000
 40 4-5 p. 739-742
4 p.
 artikel
51 Optical characterization of dielectric borophosphosilicate glass Gartner, Mariuca
 2000
 40 4-5 p. 617-620
4 p.
 artikel
52 Oscillatory kinetics of anodic oxidation of silicon – influence of the crystallographic orientation Parkhutik, V
 2000
 40 4-5 p. 795-798
4 p.
 artikel
53 Oxidation of Si1− x − y Ge x C y strained layers grown on Si: kinetics and interface properties Cuadras, A
 2000
 40 4-5 p. 829-832
4 p.
 artikel
54 Photoluminescence from pressure-annealed silicon dioxide and nitride films Misiuk, A
 2000
 40 4-5 p. 881-884
4 p.
 artikel
55 pH, pK and pNa detection properties of SiO2/Si3N4 ISFET chemical sensors Hajji, B
 2000
 40 4-5 p. 783-786
4 p.
 artikel
56 Plasma damage in thin gate MOS dielectrics and its effect on device characteristics and reliability Brożek, Tomasz
 2000
 40 4-5 p. 625-631
7 p.
 artikel
57 Reduction of the parasitic charge generation during silicon nitride deposition in a LOCOS isolation without field implant Fay, J.L
 2000
 40 4-5 p. 593-596
4 p.
 artikel
58 Relation between defect generation, stress induced leakage current and soft breakdown in thin (<5 nm) oxides Rodrı́guez, R
 2000
 40 4-5 p. 707-710
4 p.
 artikel
59 Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures Jalabert, L
 2000
 40 4-5 p. 597-600
4 p.
 artikel
60 Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres Beichele, M
 2000
 40 4-5 p. 723-726
4 p.
 artikel
61 Reversible and irreversible interface trap centres generated at high electric fields in MOS structures Jastrzębski, C
 2000
 40 4-5 p. 755-758
4 p.
 artikel
62 Silicon microsystem passivation for high-voltage applications in DNA chips Erill, I
 2000
 40 4-5 p. 787-789
3 p.
 artikel
63 Silicon wafer oxygenation from SiO2 layers for radiation hard detectors Fonseca, L.
 2000
 40 4-5 p. 791-794
4 p.
 artikel
64 Smoothing, passivation and re-passivation of silicon surfaces by anodic oxidation: a low thermal budget process Rappich, J
 2000
 40 4-5 p. 815-819
5 p.
 artikel
65 State-of-the-art and future of silicon on insulator technologies, materials, and devices Cristoloveanu, Sorin
 2000
 40 4-5 p. 771-777
7 p.
 artikel
66 Study of the positive charge buildup into buried oxide of SIMOX SOI structure during bias–temperature stress Barchuk, I
 2000
 40 4-5 p. 811-814
4 p.
 artikel
67 Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices Herden, M
 2000
 40 4-5 p. 633-636
4 p.
 artikel
68 Synthesis and characterisation of metal suboxides for gas sensors Calderer, J
 2000
 40 4-5 p. 807-810
4 p.
 artikel
69 Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation González-Varona, O
 2000
 40 4-5 p. 885-888
4 p.
 artikel
70 Tetraethylorthosilicate SiO2 films deposited at a low temperature da Silva, A.N.R.
 2000
 40 4-5 p. 621-624
4 p.
 artikel
71 The effect of stress polarity on positive charging in thin gate oxide Bellutti, P
 2000
 40 4-5 p. 747-750
4 p.
 artikel
72 The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness Salace, G
 2000
 40 4-5 p. 763-766
4 p.
 artikel
73 The positive charge neutralisation after bi-directional stress on MOS capacitors Ziane, D
 2000
 40 4-5 p. 759-761
3 p.
 artikel
74 The relentless march of the MOSFET gate oxide thickness to zero Timp, G
 2000
 40 4-5 p. 557-562
6 p.
 artikel
75 The roles of charged and neutral oxidising species in silicon oxidation from ab initio calculations Szymanski, M.A
 2000
 40 4-5 p. 567-570
4 p.
 artikel
76 Time decay of stress induced leakage current in thin gate oxides by low-field electron injection Cester, A
 2000
 40 4-5 p. 715-718
4 p.
 artikel
77 Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals De Salvo, B
 2000
 40 4-5 p. 863-866
4 p.
 artikel
78 Ultra-thin oxide reliability: searching for the thickness scaling limit Degraeve, R
 2000
 40 4-5 p. 697-701
5 p.
 artikel
79 Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime Irene, Eugene A
 2000
 40 4-5 p. 563-565
3 p.
 artikel
80 Wet or dry ultrathin oxides: impact on gate oxide and device reliability Bruyère, S
 2000
 40 4-5 p. 691-695
5 p.
 artikel
                             80 gevonden resultaten
 
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