nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A new algorithm for transforming exponential current ramp breakdown distributions into constant current TDDB space, and the implications for gate oxide Q BD measurement methods
|
Dumin, N.A |
|
1999 |
39 |
3 |
p. 373-381 9 p. |
artikel |
2 |
Book review
|
|
|
1999 |
39 |
3 |
p. 425- 1 p. |
artikel |
3 |
Book review
|
|
|
1999 |
39 |
3 |
p. 427- 1 p. |
artikel |
4 |
Book review
|
|
|
1999 |
39 |
3 |
p. 429- 1 p. |
artikel |
5 |
Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation
|
Bandyopadhyay, A. |
|
1999 |
39 |
3 |
p. 333-339 7 p. |
artikel |
6 |
Dislocation dynamics in heterojunction bipolar transistor under current induced thermal stress
|
Tsai, C.T. |
|
1999 |
39 |
3 |
p. 383-389 7 p. |
artikel |
7 |
Evaluation of reliability of μBGA solder joints through twisting and bending 1 1 An earlier version of this paper was published in Proceedings of the International Symposium of Microelectronics, Philadelphia, 14–16 October, 1997[1].
|
Perera, U.Daya |
|
1999 |
39 |
3 |
p. 391-399 9 p. |
artikel |
8 |
Frequency dependence of the lifetime of a surface micromachined microengine driving a load
|
Tanner, Danelle M |
|
1999 |
39 |
3 |
p. 401-414 14 p. |
artikel |
9 |
Gate oxide reliability concerns in gate-metal sputtering deposition process: an effect of low-energy large-mass ion bombardment
|
Ushiki, Takeo |
|
1999 |
39 |
3 |
p. 327-332 6 p. |
artikel |
10 |
Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides
|
Wu, Y |
|
1999 |
39 |
3 |
p. 365-372 8 p. |
artikel |
11 |
New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness
|
Ker, M.-D. |
|
1999 |
39 |
3 |
p. 415-424 10 p. |
artikel |
12 |
Oxide thickness dependence of plasma charging damage
|
Lin, H.-C |
|
1999 |
39 |
3 |
p. 357-364 8 p. |
artikel |
13 |
Random telegraph signal noise instabilities in lattice-mismatched InGaAs/InP photodiodes
|
Pogany, D. |
|
1999 |
39 |
3 |
p. 341-345 5 p. |
artikel |
14 |
Texture and electromigration lifetime improvements in layered Al-alloy metallization with underlying Ti by controlling water adsorption on SiO2 substrates
|
Yoshida, Tomoyuki |
|
1999 |
39 |
3 |
p. 347-356 10 p. |
artikel |