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Journal description
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Details for article 10 of 14 found articles
| Title: |
Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides |
| Author: |
Wu, Y Lucovsky, G |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 39 (1999) nr. 3 pages 8 p. |
| Year: |
1999 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 14 found articles
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