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                                       Details for article 10 of 14 found articles
 
 
  Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides
 
 
Title: Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides
Author: Wu, Y
Lucovsky, G
Appeared in: Microelectronics reliability
Paging: Volume 39 (1999) nr. 3 pages 8 p.
Year: 1999
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 14 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands