nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparison of MOSFETs aging under d.c., a.c. and alternating stress conditions
|
Revil, Nathalie |
|
1993 |
33 |
11-12 |
p. 1909-1919 11 p. |
artikel |
2 |
An investigation of hot carrier effects in submicron CMOS integrated circuits
|
Fang, Peng |
|
1993 |
33 |
11-12 |
p. 1713-1727 15 p. |
artikel |
3 |
Application of the atomic force microscope to integrated circuit failure analysis
|
Rodgers, Mark R. |
|
1993 |
33 |
11-12 |
p. 1947-1956 10 p. |
artikel |
4 |
Characterisation of electromigration damage by multiple electrical measurements
|
Jones, B.K. |
|
1993 |
33 |
11-12 |
p. 1829-1840 12 p. |
artikel |
5 |
Dielectric integrity of thin thermal oxides on silicon
|
Brożek, Tomasz |
|
1993 |
33 |
11-12 |
p. 1637-1656 20 p. |
artikel |
6 |
Dynamic effects in hot-carrier degradation relevant for CMOS operation
|
Weber, W. |
|
1993 |
33 |
11-12 |
p. 1729-1736 8 p. |
artikel |
7 |
Editorial
|
Stojadinović, N.D. |
|
1993 |
33 |
11-12 |
p. 1635-1636 2 p. |
artikel |
8 |
Electromigration in thin-films for microelectronics
|
Baldini, G.L. |
|
1993 |
33 |
11-12 |
p. 1779-1805 27 p. |
artikel |
9 |
Hot-carrier effects in scaled MOS devices
|
Takeda, Eiji |
|
1993 |
33 |
11-12 |
p. 1687-1711 25 p. |
artikel |
10 |
Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment
|
Oualid, J. |
|
1993 |
33 |
11-12 |
p. 1759-1777 19 p. |
artikel |
11 |
Implications of a localised defect model for wafer level reliability measurements of thin dielectrics
|
O'Sullivan, Paula |
|
1993 |
33 |
11-12 |
p. 1679-1685 7 p. |
artikel |
12 |
Influence of series resistance in oxide parameter extraction data from accelerated tests
|
Pio, F. |
|
1993 |
33 |
11-12 |
p. 1657-1663 7 p. |
artikel |
13 |
On the status of wafer-level metal integrity testing
|
Dion, Michael J. |
|
1993 |
33 |
11-12 |
p. 1807-1827 21 p. |
artikel |
14 |
Reliability issues in submicron MOSFETs with oxynitride gate dielectrics
|
Joshi, Aniruddha B. |
|
1993 |
33 |
11-12 |
p. 1845-1866 22 p. |
artikel |
15 |
Reliability issues of offset drain transistors after different modes of static electrical stress
|
Papadas, C. |
|
1993 |
33 |
11-12 |
p. 1921-1933 13 p. |
artikel |
16 |
Reliability issues of silicon-dioxide structures—Application to FLOTOX EEPROM cells
|
Papadas, C. |
|
1993 |
33 |
11-12 |
p. 1867-1908 42 p. |
artikel |
17 |
Resistance decay after electromigration as the effect of mechanical stress relaxation
|
Baldini, G.L. |
|
1993 |
33 |
11-12 |
p. 1841-1844 4 p. |
artikel |
18 |
Statistical modelling of time dependent oxide breakdown distributions
|
Vollertsen, R.-P. |
|
1993 |
33 |
11-12 |
p. 1665-1677 13 p. |
artikel |
19 |
The in-process bond shear test: Its relationship to ball bond reliability and its application to the reduction of wirebond process variation
|
Guzman, Melissa Shell-De |
|
1993 |
33 |
11-12 |
p. 1935-1946 12 p. |
artikel |
20 |
Transient hot-electron effect and its impact on circuit reliability
|
Wang, Hai |
|
1993 |
33 |
11-12 |
p. 1737-1758 22 p. |
artikel |