| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A complementarity of the 1 f noise and the charge-pumping methods for determination of the degradation of the small size MOS transistors
|
Grabowski, Franciszek
|
|
1992
|
32 |
11 |
p. 1621-1626
6 p.
|
artikel
|
| 2 |
An advanced MESFET burn-in method and equipment
|
Kovács, B.
|
|
1992
|
32 |
11 |
p. 1585-1588
4 p.
|
artikel
|
| 3 |
Approach to the analysis of gate oxide shorts in CMOS digital circuits
|
Segura, Jaume A.
|
|
1992
|
32 |
11 |
p. 1509-1514
6 p.
|
artikel
|
| 4 |
Critical areas for finite length conductors
|
Corsi, F.
|
|
1992
|
32 |
11 |
p. 1539-1544
6 p.
|
artikel
|
| 5 |
Dynamic hot carrier degradation effects in CMOS submicron transistors
|
Bergonzoni, C.
|
|
1992
|
32 |
11 |
p. 1515-1519
5 p.
|
artikel
|
| 6 |
Editorial
|
Stojadinović, N.
|
|
1992
|
32 |
11 |
p. 1497-1498
2 p.
|
artikel
|
| 7 |
Electromigration behavior of multilayered Al/Hf and Al/Ti fine lines and its dependence on Cu and Pd solute additions
|
Rodbell, K.P.
|
|
1992
|
32 |
11 |
p. 1521-1526
6 p.
|
artikel
|
| 8 |
EMI-induced failures in integrated circuit operational amplifiers
|
Graffi, S.
|
|
1992
|
32 |
11 |
p. 1551-1557
7 p.
|
artikel
|
| 9 |
Long term degradation of GaAs integrated circuits
|
Konttinen, A.
|
|
1992
|
32 |
11 |
p. 1571-1576
6 p.
|
artikel
|
| 10 |
Low-frequency noise measurements as a complementary tool in the investigation of integrated circuit reliability
|
Diligenti, A.
|
|
1992
|
32 |
11 |
p. 1627-1631
5 p.
|
artikel
|
| 11 |
Multiple adjacent image processing for automated failure location using electron beam testing
|
Conard, D.
|
|
1992
|
32 |
11 |
p. 1615-1620
6 p.
|
artikel
|
| 12 |
New aspects of the reliability of lithium thyonil chloride cells
|
Bǎjenescu, Titu I.
|
|
1992
|
32 |
11 |
p. 1651-1653
3 p.
|
artikel
|
| 13 |
On-chip electrostatic discharge protections in advanced CMOS technologies
|
Maene, N.
|
|
1992
|
32 |
11 |
p. 1545-1550
6 p.
|
artikel
|
| 14 |
On-chip stress, metal deformation and moisture measurements
|
Bossche, A.
|
|
1992
|
32 |
11 |
p. 1633-1637
5 p.
|
artikel
|
| 15 |
Performances and reliability of HEMTs: State of the art and experimental analysis
|
Conti, P.C.
|
|
1992
|
32 |
11 |
p. 1577-1583
7 p.
|
artikel
|
| 16 |
Publications, notices, calls for papers, etc.
|
|
|
1992
|
32 |
11 |
p. 1655-
1 p.
|
artikel
|
| 17 |
Reliability monitoring of components for telecom applications: Failure mechanisms driving technology assessment
|
Motta, Antonino
|
|
1992
|
32 |
11 |
p. 1639-1644
6 p.
|
artikel
|
| 18 |
Reliability of compound semiconductor devices
|
Fantini, Fausto
|
|
1992
|
32 |
11 |
p. 1559-1569
11 p.
|
artikel
|
| 19 |
Reliability problems of submicron MOS transistors and circuits
|
Krautschneider, Wolfgang H.
|
|
1992
|
32 |
11 |
p. 1499-1508
10 p.
|
artikel
|
| 20 |
Single bit failure mechanism in DRAMs caused by MILO cracks
|
Kitagawa, H.
|
|
1992
|
32 |
11 |
p. 1533-1537
5 p.
|
artikel
|
| 21 |
Techniques and characterization of pulsed electromigration at the wafer-level
|
Suehle, John S.
|
|
1992
|
32 |
11 |
p. 1527-1532
6 p.
|
artikel
|
| 22 |
Technological analysis of integrated circuits as a part of a manufacturing lines agreement for France Telecom: Methodology and examples of potential reliability problems
|
Boulaire, J.Y.
|
|
1992
|
32 |
11 |
p. 1645-1649
5 p.
|
artikel
|
| 23 |
Test method in voltage contrast mode using liquid crystals
|
Picart, B.
|
|
1992
|
32 |
11 |
p. 1605-1613
9 p.
|
artikel
|
| 24 |
The scanning optical microscope: A powerful tool for failure analysis of electronic devices
|
Azzini, G.A.
|
|
1992
|
32 |
11 |
p. 1599-1604
6 p.
|
artikel
|
| 25 |
VLSI failure analysis: A review
|
Nikawa, Kiyoshi
|
|
1992
|
32 |
11 |
p. 1589-1597
9 p.
|
artikel
|
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