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                             25 results found
no title author magazine year volume issue page(s) type
1 A complementarity of the 1 f noise and the charge-pumping methods for determination of the degradation of the small size MOS transistors Grabowski, Franciszek
1992
32 11 p. 1621-1626
6 p.
article
2 An advanced MESFET burn-in method and equipment Kovács, B.
1992
32 11 p. 1585-1588
4 p.
article
3 Approach to the analysis of gate oxide shorts in CMOS digital circuits Segura, Jaume A.
1992
32 11 p. 1509-1514
6 p.
article
4 Critical areas for finite length conductors Corsi, F.
1992
32 11 p. 1539-1544
6 p.
article
5 Dynamic hot carrier degradation effects in CMOS submicron transistors Bergonzoni, C.
1992
32 11 p. 1515-1519
5 p.
article
6 Editorial Stojadinović, N.
1992
32 11 p. 1497-1498
2 p.
article
7 Electromigration behavior of multilayered Al/Hf and Al/Ti fine lines and its dependence on Cu and Pd solute additions Rodbell, K.P.
1992
32 11 p. 1521-1526
6 p.
article
8 EMI-induced failures in integrated circuit operational amplifiers Graffi, S.
1992
32 11 p. 1551-1557
7 p.
article
9 Long term degradation of GaAs integrated circuits Konttinen, A.
1992
32 11 p. 1571-1576
6 p.
article
10 Low-frequency noise measurements as a complementary tool in the investigation of integrated circuit reliability Diligenti, A.
1992
32 11 p. 1627-1631
5 p.
article
11 Multiple adjacent image processing for automated failure location using electron beam testing Conard, D.
1992
32 11 p. 1615-1620
6 p.
article
12 New aspects of the reliability of lithium thyonil chloride cells Bǎjenescu, Titu I.
1992
32 11 p. 1651-1653
3 p.
article
13 On-chip electrostatic discharge protections in advanced CMOS technologies Maene, N.
1992
32 11 p. 1545-1550
6 p.
article
14 On-chip stress, metal deformation and moisture measurements Bossche, A.
1992
32 11 p. 1633-1637
5 p.
article
15 Performances and reliability of HEMTs: State of the art and experimental analysis Conti, P.C.
1992
32 11 p. 1577-1583
7 p.
article
16 Publications, notices, calls for papers, etc. 1992
32 11 p. 1655-
1 p.
article
17 Reliability monitoring of components for telecom applications: Failure mechanisms driving technology assessment Motta, Antonino
1992
32 11 p. 1639-1644
6 p.
article
18 Reliability of compound semiconductor devices Fantini, Fausto
1992
32 11 p. 1559-1569
11 p.
article
19 Reliability problems of submicron MOS transistors and circuits Krautschneider, Wolfgang H.
1992
32 11 p. 1499-1508
10 p.
article
20 Single bit failure mechanism in DRAMs caused by MILO cracks Kitagawa, H.
1992
32 11 p. 1533-1537
5 p.
article
21 Techniques and characterization of pulsed electromigration at the wafer-level Suehle, John S.
1992
32 11 p. 1527-1532
6 p.
article
22 Technological analysis of integrated circuits as a part of a manufacturing lines agreement for France Telecom: Methodology and examples of potential reliability problems Boulaire, J.Y.
1992
32 11 p. 1645-1649
5 p.
article
23 Test method in voltage contrast mode using liquid crystals Picart, B.
1992
32 11 p. 1605-1613
9 p.
article
24 The scanning optical microscope: A powerful tool for failure analysis of electronic devices Azzini, G.A.
1992
32 11 p. 1599-1604
6 p.
article
25 VLSI failure analysis: A review Nikawa, Kiyoshi
1992
32 11 p. 1589-1597
9 p.
article
                             25 results found
 
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